BYV29-600PQ
  • Share:

WeEn Semiconductors BYV29-600PQ

Manufacturer No:
BYV29-600PQ
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 600V 9A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYV29-600PQ is a high-performance rectifier diode manufactured by WeEn Semiconductors. This ultrafast diode is designed for applications requiring high voltage and current handling capabilities. It features a TO-220AB package, making it suitable for through-hole mounting and providing good thermal dissipation. The BYV29-600PQ is ideal for use in power supply circuits, motor control systems, and other high-power electronic devices.

Key Specifications

Parameter Conditions Min Typ Max Unit
VRRM (Repetitive Peak Reverse Voltage) - - - 600 V
VRWM (Crest Working Reverse Voltage) - - - 600 V
IF(AV) (Average Forward Current) δ = 0.5; square-wave pulse; Tmb ≤ 120 °C - - 9 A
IFRM (Repetitive Peak Forward Current) δ = 0.5; Tmb ≤ 120 °C; square-wave pulse - - 18 A
IFSM (Non-Repetitive Peak Forward Current) tp = 10 ms; sine-wave pulse - - 70 A
VF (Forward Voltage) IF = 8 A; Tj = 25 °C 1.12 1.25 - V
trr (Reverse Recovery Time) IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C 50 - 60 ns
Tj (Junction Temperature) - - - 150 °C
Tstg (Storage Temperature) - -40 - 150 °C

Key Features

  • Ultrafast Recovery Time: The BYV29-600PQ features a fast reverse recovery time of 50-60 ns, making it suitable for high-frequency applications.
  • High Voltage and Current Ratings: With a repetitive peak reverse voltage of 600 V and an average forward current of 9 A, this diode is designed for high-power applications.
  • Low Forward Voltage Drop: The diode has a low forward voltage drop, typically 1.12-1.25 V at 8 A and 25 °C, which helps in reducing power losses.
  • TO-220AB Package: The through-hole TO-220AB package provides good thermal dissipation and ease of mounting.
  • High Junction Temperature: The diode can operate at a junction temperature of up to 150 °C, making it robust for various environmental conditions.

Applications

  • Power Supply Circuits: The BYV29-600PQ is ideal for use in power supply circuits due to its high voltage and current handling capabilities.
  • Motor Control Systems: It is suitable for motor control systems where high power and fast switching times are required.
  • High-Power Electronic Devices: This diode can be used in various high-power electronic devices such as inverters, converters, and rectifiers.
  • Industrial Automation: The BYV29-600PQ can be applied in industrial automation systems that require reliable and efficient power management.

Q & A

  1. What is the repetitive peak reverse voltage of the BYV29-600PQ?

    The repetitive peak reverse voltage of the BYV29-600PQ is 600 V.

  2. What is the average forward current rating of the BYV29-600PQ?

    The average forward current rating of the BYV29-600PQ is 9 A.

  3. What is the typical forward voltage drop of the BYV29-600PQ at 8 A and 25 °C?

    The typical forward voltage drop of the BYV29-600PQ at 8 A and 25 °C is 1.25 V.

  4. What is the reverse recovery time of the BYV29-600PQ?

    The reverse recovery time of the BYV29-600PQ is 50-60 ns.

  5. What is the junction temperature rating of the BYV29-600PQ?

    The junction temperature rating of the BYV29-600PQ is up to 150 °C.

  6. What package type does the BYV29-600PQ use?

    The BYV29-600PQ uses a TO-220AB package.

  7. What are some common applications of the BYV29-600PQ?

    The BYV29-600PQ is commonly used in power supply circuits, motor control systems, high-power electronic devices, and industrial automation systems.

  8. How does the BYV29-600PQ handle thermal dissipation?

    The TO-220AB package of the BYV29-600PQ provides good thermal dissipation, making it suitable for high-power applications.

  9. What is the storage temperature range for the BYV29-600PQ?

    The storage temperature range for the BYV29-600PQ is -40 to 150 °C.

  10. Where can I find detailed specifications for the BYV29-600PQ?

    Detailed specifications for the BYV29-600PQ can be found in the datasheet available on the WeEn Semiconductors website or through distributors like Mouser, Digi-Key, and Wolfchip Electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):9A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

-
115

Please send RFQ , we will respond immediately.

Same Series
DD15S20LVL0/AA
DD15S20LVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD26M20HT0/AA
DD26M20HT0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

NXPSC10650Q
NXPSC10650Q
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A TO220AC
BT151X-500RNQ
BT151X-500RNQ
WeEn Semiconductors
SCR 500V TO220-3
BT151X-650LTFQ
BT151X-650LTFQ
WeEn Semiconductors
SCR 650V 12A TO220F
BT169H,412
BT169H,412
WeEn Semiconductors
SCR 800V 800MA TO92-3
BT136-600E,127
BT136-600E,127
WeEn Semiconductors
TRIAC SENS GATE 600V 4A TO220AB
BT137X-600D,127
BT137X-600D,127
WeEn Semiconductors
TRIAC SENS GATE 600V 8A TO220-3
Z0103NN,135
Z0103NN,135
WeEn Semiconductors
TRIAC SENS GATE 800V 1A SC73
Z0109MA0,412
Z0109MA0,412
WeEn Semiconductors
TRIAC SENS GATE 600V 1A TO92-3
BTA225-800B,127
BTA225-800B,127
WeEn Semiconductors
TRIAC 800V 25A TO220AB
BT137-600/DG,127
BT137-600/DG,127
WeEn Semiconductors
TRIAC 600V 8A TO220AB
Z0107NA0QP
Z0107NA0QP
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92
Z0109MA/L01EP
Z0109MA/L01EP
WeEn Semiconductors
Z0109MA/L01/TO-92/STANDARD MAR