BYV29-600PQ
  • Share:

WeEn Semiconductors BYV29-600PQ

Manufacturer No:
BYV29-600PQ
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 600V 9A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYV29-600PQ is a high-performance rectifier diode manufactured by WeEn Semiconductors. This ultrafast diode is designed for applications requiring high voltage and current handling capabilities. It features a TO-220AB package, making it suitable for through-hole mounting and providing good thermal dissipation. The BYV29-600PQ is ideal for use in power supply circuits, motor control systems, and other high-power electronic devices.

Key Specifications

Parameter Conditions Min Typ Max Unit
VRRM (Repetitive Peak Reverse Voltage) - - - 600 V
VRWM (Crest Working Reverse Voltage) - - - 600 V
IF(AV) (Average Forward Current) δ = 0.5; square-wave pulse; Tmb ≤ 120 °C - - 9 A
IFRM (Repetitive Peak Forward Current) δ = 0.5; Tmb ≤ 120 °C; square-wave pulse - - 18 A
IFSM (Non-Repetitive Peak Forward Current) tp = 10 ms; sine-wave pulse - - 70 A
VF (Forward Voltage) IF = 8 A; Tj = 25 °C 1.12 1.25 - V
trr (Reverse Recovery Time) IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C 50 - 60 ns
Tj (Junction Temperature) - - - 150 °C
Tstg (Storage Temperature) - -40 - 150 °C

Key Features

  • Ultrafast Recovery Time: The BYV29-600PQ features a fast reverse recovery time of 50-60 ns, making it suitable for high-frequency applications.
  • High Voltage and Current Ratings: With a repetitive peak reverse voltage of 600 V and an average forward current of 9 A, this diode is designed for high-power applications.
  • Low Forward Voltage Drop: The diode has a low forward voltage drop, typically 1.12-1.25 V at 8 A and 25 °C, which helps in reducing power losses.
  • TO-220AB Package: The through-hole TO-220AB package provides good thermal dissipation and ease of mounting.
  • High Junction Temperature: The diode can operate at a junction temperature of up to 150 °C, making it robust for various environmental conditions.

Applications

  • Power Supply Circuits: The BYV29-600PQ is ideal for use in power supply circuits due to its high voltage and current handling capabilities.
  • Motor Control Systems: It is suitable for motor control systems where high power and fast switching times are required.
  • High-Power Electronic Devices: This diode can be used in various high-power electronic devices such as inverters, converters, and rectifiers.
  • Industrial Automation: The BYV29-600PQ can be applied in industrial automation systems that require reliable and efficient power management.

Q & A

  1. What is the repetitive peak reverse voltage of the BYV29-600PQ?

    The repetitive peak reverse voltage of the BYV29-600PQ is 600 V.

  2. What is the average forward current rating of the BYV29-600PQ?

    The average forward current rating of the BYV29-600PQ is 9 A.

  3. What is the typical forward voltage drop of the BYV29-600PQ at 8 A and 25 °C?

    The typical forward voltage drop of the BYV29-600PQ at 8 A and 25 °C is 1.25 V.

  4. What is the reverse recovery time of the BYV29-600PQ?

    The reverse recovery time of the BYV29-600PQ is 50-60 ns.

  5. What is the junction temperature rating of the BYV29-600PQ?

    The junction temperature rating of the BYV29-600PQ is up to 150 °C.

  6. What package type does the BYV29-600PQ use?

    The BYV29-600PQ uses a TO-220AB package.

  7. What are some common applications of the BYV29-600PQ?

    The BYV29-600PQ is commonly used in power supply circuits, motor control systems, high-power electronic devices, and industrial automation systems.

  8. How does the BYV29-600PQ handle thermal dissipation?

    The TO-220AB package of the BYV29-600PQ provides good thermal dissipation, making it suitable for high-power applications.

  9. What is the storage temperature range for the BYV29-600PQ?

    The storage temperature range for the BYV29-600PQ is -40 to 150 °C.

  10. Where can I find detailed specifications for the BYV29-600PQ?

    Detailed specifications for the BYV29-600PQ can be found in the datasheet available on the WeEn Semiconductors website or through distributors like Mouser, Digi-Key, and Wolfchip Electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):9A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

-
115

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50/AA
DD26S2S50V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Related Product By Categories

BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

BYQ28E-200,127
BYQ28E-200,127
WeEn Semiconductors
DIODE ARRAY GP 200V 10A TO220AB
BYQ28ED-200,118
BYQ28ED-200,118
WeEn Semiconductors
DIODE ARRAY GP 200V 10A DPAK
BYV42EB-200,118
BYV42EB-200,118
WeEn Semiconductors
DIODE ARRAY GP 200V 30A D2PAK
BYV25D-600,118
BYV25D-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 5A DPAK
BYW29E-200,127
BYW29E-200,127
WeEn Semiconductors
DIODE GEN PURP 200V 8A TO220AC
BT151-500R,127
BT151-500R,127
WeEn Semiconductors
SCR 500V 12A TO220AB
BT138X-800,127
BT138X-800,127
WeEn Semiconductors
TRIAC 800V 12A TO220-3
BTA201-800ER,116
BTA201-800ER,116
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
BT138-800G,127
BT138-800G,127
WeEn Semiconductors
TRIAC 800V 12A TO220AB
BTA316-800B,127
BTA316-800B,127
WeEn Semiconductors
TRIAC 800V 16A TO220AB
BT139B-800,118
BT139B-800,118
WeEn Semiconductors
TRIAC 800V 16A D2PAK
PHE13005X/01,127
PHE13005X/01,127
WeEn Semiconductors
TRANS NPN 400V 4A TO-220F