NXPSC10650XQ
  • Share:

WeEn Semiconductors NXPSC10650XQ

Manufacturer No:
NXPSC10650XQ
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE SCHOTTKY 650V 10A TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NXPSC10650XQ is a high-performance Schottky diode manufactured by WeEn Semiconductors. This component is designed to offer highly stable switching performance, making it suitable for a variety of power management and high-frequency applications. The diode features a robust TO220F package, ensuring reliable operation in demanding environments.

Key Specifications

ParameterMinTypMaxUnit
Voltage Rating (V_RRM)--650V
Current Rating (I_F(AV))--10A
Forward Voltage (V_F)-0.730.85V
Reverse Recovery Time (t_rr)--30ns
Junction Temperature (T_j)--175°C
Package Type--TO220F-

Key Features

  • Highly stable switching performance
  • High forward surge capability (IFSM)
  • Extremely fast reverse recovery time
  • Low forward voltage drop (V_F)
  • Robust TO220F package for reliable operation

Applications

  • Power management systems
  • High-frequency switching applications
  • Rectifier circuits
  • DC-DC converters
  • Motor control and drive systems

Q & A

  1. What is the voltage rating of the NXPSC10650XQ? The voltage rating of the NXPSC10650XQ is 650V.
  2. What is the current rating of the NXPSC10650XQ? The current rating of the NXPSC10650XQ is 10A.
  3. What is the typical forward voltage of the NXPSC10650XQ? The typical forward voltage of the NXPSC10650XQ is 0.73V.
  4. What is the reverse recovery time of the NXPSC10650XQ? The reverse recovery time of the NXPSC10650XQ is up to 30ns.
  5. What is the maximum junction temperature for the NXPSC10650XQ? The maximum junction temperature for the NXPSC10650XQ is 175°C.
  6. What package type does the NXPSC10650XQ use? The NXPSC10650XQ uses a TO220F package.
  7. What are some key applications for the NXPSC10650XQ? Key applications include power management systems, high-frequency switching applications, rectifier circuits, DC-DC converters, and motor control and drive systems.
  8. Why is the NXPSC10650XQ suitable for high-frequency applications? The NXPSC10650XQ is suitable for high-frequency applications due to its extremely fast reverse recovery time and low forward voltage drop.
  9. What are the benefits of using a Schottky diode like the NXPSC10650XQ? Benefits include highly stable switching performance, high forward surge capability, and low power losses due to the low forward voltage drop.
  10. Where can I find detailed specifications for the NXPSC10650XQ? Detailed specifications can be found in the datasheet available on the WeEn Semiconductors website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:250 µA @ 650 V
Capacitance @ Vr, F:300pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack, Isolated Tab
Supplier Device Package:TO-220F
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

-
276

Please send RFQ , we will respond immediately.

Same Series
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

BYQ30E-200,127
BYQ30E-200,127
WeEn Semiconductors
DIODE ARRAY GP 200V 16A TO220AB
BYV32EB-200,118
BYV32EB-200,118
WeEn Semiconductors
DIODE ARRAY GP 200V 20A D2PAK
BYT79-500,127
BYT79-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 14A TO220AC
BYC15X-600,127
BYC15X-600,127
WeEn Semiconductors
DIODE GEN PURP 500V 15A TO220F
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
BT151S-800R,118
BT151S-800R,118
WeEn Semiconductors
SCR 800V 12A DPAK
BTA201-800ER,412
BTA201-800ER,412
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
BT139-600E,127
BT139-600E,127
WeEn Semiconductors
TRIAC SENS GATE 600V 16A TO220AB
BTA225-600B,127
BTA225-600B,127
WeEn Semiconductors
TRIAC 600V 25A TO220AB
BTA225B-800B,118
BTA225B-800B,118
WeEn Semiconductors
TRIAC 800V 25A D2PAK
BT139-800E,127
BT139-800E,127
WeEn Semiconductors
TRIAC SENS GATE 800V 16A TO220AB
BUJ100,412
BUJ100,412
WeEn Semiconductors
TRANS NPN 400V 1A TO92-3