NXPSC10650XQ
  • Share:

WeEn Semiconductors NXPSC10650XQ

Manufacturer No:
NXPSC10650XQ
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE SCHOTTKY 650V 10A TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NXPSC10650XQ is a high-performance Schottky diode manufactured by WeEn Semiconductors. This component is designed to offer highly stable switching performance, making it suitable for a variety of power management and high-frequency applications. The diode features a robust TO220F package, ensuring reliable operation in demanding environments.

Key Specifications

ParameterMinTypMaxUnit
Voltage Rating (V_RRM)--650V
Current Rating (I_F(AV))--10A
Forward Voltage (V_F)-0.730.85V
Reverse Recovery Time (t_rr)--30ns
Junction Temperature (T_j)--175°C
Package Type--TO220F-

Key Features

  • Highly stable switching performance
  • High forward surge capability (IFSM)
  • Extremely fast reverse recovery time
  • Low forward voltage drop (V_F)
  • Robust TO220F package for reliable operation

Applications

  • Power management systems
  • High-frequency switching applications
  • Rectifier circuits
  • DC-DC converters
  • Motor control and drive systems

Q & A

  1. What is the voltage rating of the NXPSC10650XQ? The voltage rating of the NXPSC10650XQ is 650V.
  2. What is the current rating of the NXPSC10650XQ? The current rating of the NXPSC10650XQ is 10A.
  3. What is the typical forward voltage of the NXPSC10650XQ? The typical forward voltage of the NXPSC10650XQ is 0.73V.
  4. What is the reverse recovery time of the NXPSC10650XQ? The reverse recovery time of the NXPSC10650XQ is up to 30ns.
  5. What is the maximum junction temperature for the NXPSC10650XQ? The maximum junction temperature for the NXPSC10650XQ is 175°C.
  6. What package type does the NXPSC10650XQ use? The NXPSC10650XQ uses a TO220F package.
  7. What are some key applications for the NXPSC10650XQ? Key applications include power management systems, high-frequency switching applications, rectifier circuits, DC-DC converters, and motor control and drive systems.
  8. Why is the NXPSC10650XQ suitable for high-frequency applications? The NXPSC10650XQ is suitable for high-frequency applications due to its extremely fast reverse recovery time and low forward voltage drop.
  9. What are the benefits of using a Schottky diode like the NXPSC10650XQ? Benefits include highly stable switching performance, high forward surge capability, and low power losses due to the low forward voltage drop.
  10. Where can I find detailed specifications for the NXPSC10650XQ? Detailed specifications can be found in the datasheet available on the WeEn Semiconductors website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:250 µA @ 650 V
Capacitance @ Vr, F:300pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack, Isolated Tab
Supplier Device Package:TO-220F
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

-
276

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90

Related Product By Brand

BYV42E-200,127
BYV42E-200,127
WeEn Semiconductors
DIODE ARRAY GP 200V 30A TO220AB
BYT79-600,127
BYT79-600,127
WeEn Semiconductors
DIODE GEN PURP 600V 15A TO220AC
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
BT151-800R,127
BT151-800R,127
WeEn Semiconductors
SCR 800V 12A TO220AB
BT139-800,127
BT139-800,127
WeEn Semiconductors
TRIAC 800V 16A TO220AB
BT138X-800,127
BT138X-800,127
WeEn Semiconductors
TRIAC 800V 12A TO220-3
BTA41-800BQ
BTA41-800BQ
WeEn Semiconductors
BTA41-800BQ/II TO3P/STANDARD MAR
BT136-600D/DG,127
BT136-600D/DG,127
WeEn Semiconductors
TRIAC SENS GATE 600V 4A TO220AB
BT137-600D,127
BT137-600D,127
WeEn Semiconductors
TRIAC SENS GATE 600V 8A TO220AB
BT131-800D,116
BT131-800D,116
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
BT138X-800F,127
BT138X-800F,127
WeEn Semiconductors
TRIAC 800V 12A TO220-3
BT139-600-0Q
BT139-600-0Q
WeEn Semiconductors
BT139-600-0/SIL3P/STANDARD MAR