NXPSC10650XQ
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WeEn Semiconductors NXPSC10650XQ

Manufacturer No:
NXPSC10650XQ
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE SCHOTTKY 650V 10A TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NXPSC10650XQ is a high-performance Schottky diode manufactured by WeEn Semiconductors. This component is designed to offer highly stable switching performance, making it suitable for a variety of power management and high-frequency applications. The diode features a robust TO220F package, ensuring reliable operation in demanding environments.

Key Specifications

ParameterMinTypMaxUnit
Voltage Rating (V_RRM)--650V
Current Rating (I_F(AV))--10A
Forward Voltage (V_F)-0.730.85V
Reverse Recovery Time (t_rr)--30ns
Junction Temperature (T_j)--175°C
Package Type--TO220F-

Key Features

  • Highly stable switching performance
  • High forward surge capability (IFSM)
  • Extremely fast reverse recovery time
  • Low forward voltage drop (V_F)
  • Robust TO220F package for reliable operation

Applications

  • Power management systems
  • High-frequency switching applications
  • Rectifier circuits
  • DC-DC converters
  • Motor control and drive systems

Q & A

  1. What is the voltage rating of the NXPSC10650XQ? The voltage rating of the NXPSC10650XQ is 650V.
  2. What is the current rating of the NXPSC10650XQ? The current rating of the NXPSC10650XQ is 10A.
  3. What is the typical forward voltage of the NXPSC10650XQ? The typical forward voltage of the NXPSC10650XQ is 0.73V.
  4. What is the reverse recovery time of the NXPSC10650XQ? The reverse recovery time of the NXPSC10650XQ is up to 30ns.
  5. What is the maximum junction temperature for the NXPSC10650XQ? The maximum junction temperature for the NXPSC10650XQ is 175°C.
  6. What package type does the NXPSC10650XQ use? The NXPSC10650XQ uses a TO220F package.
  7. What are some key applications for the NXPSC10650XQ? Key applications include power management systems, high-frequency switching applications, rectifier circuits, DC-DC converters, and motor control and drive systems.
  8. Why is the NXPSC10650XQ suitable for high-frequency applications? The NXPSC10650XQ is suitable for high-frequency applications due to its extremely fast reverse recovery time and low forward voltage drop.
  9. What are the benefits of using a Schottky diode like the NXPSC10650XQ? Benefits include highly stable switching performance, high forward surge capability, and low power losses due to the low forward voltage drop.
  10. Where can I find detailed specifications for the NXPSC10650XQ? Detailed specifications can be found in the datasheet available on the WeEn Semiconductors website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:250 µA @ 650 V
Capacitance @ Vr, F:300pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack, Isolated Tab
Supplier Device Package:TO-220F
Operating Temperature - Junction:175°C (Max)
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