BYC8X-600,127
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WeEn Semiconductors BYC8X-600,127

Manufacturer No:
BYC8X-600,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 600V 8A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYC8X-600,127 is a high-efficiency, fast recovery diode produced by WeEn Semiconductors. This component is designed to offer a cost-effective alternative to Schottky technology, making it a valuable choice for various electronic applications. The diode features advanced platinum doped technology (SABER) which ensures low leakage current even at high temperatures, enhancing its reliability and performance.

Key Specifications

ParameterValue
Voltage Rating (V)600V
Current Rating (A)8A
Recovery Time (t_rr)30ns
Leakage Current (I_R)Low leakage current
Thermal ResistanceLow thermal resistance
Package TypeTO-220-2
ComplianceROHS compliant

Key Features

  • Low leakage current, especially at high temperatures, thanks to platinum doped technology (SABER).
  • Low thermal resistance, ensuring efficient heat dissipation.
  • Low recovery current, contributing to high efficiency in switching applications.
  • Fast recovery time of 30ns, suitable for high-frequency operations.
  • Cost-efficient compared to Schottky technology.

Applications

The BYC8X-600,127 diode is suitable for a variety of applications, including:

  • Power supplies and converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • General-purpose rectification in industrial and consumer electronics.

Q & A

  1. What is the voltage rating of the BYC8X-600,127 diode?
    The voltage rating of the BYC8X-600,127 diode is 600V.
  2. What is the current rating of the BYC8X-600,127 diode?
    The current rating of the BYC8X-600,127 diode is 8A.
  3. What is the recovery time of the BYC8X-600,127 diode?
    The recovery time of the BYC8X-600,127 diode is 30ns.
  4. What technology is used in the BYC8X-600,127 diode to reduce leakage current?
    The BYC8X-600,127 diode uses platinum doped technology (SABER) to reduce leakage current.
  5. Is the BYC8X-600,127 diode ROHS compliant?
    Yes, the BYC8X-600,127 diode is ROHS compliant.
  6. What is the package type of the BYC8X-600,127 diode?
    The package type of the BYC8X-600,127 diode is TO-220-2.
  7. What are some typical applications of the BYC8X-600,127 diode?
    The BYC8X-600,127 diode is typically used in power supplies, motor control systems, high-frequency switching circuits, and general-purpose rectification in industrial and consumer electronics.
  8. How does the BYC8X-600,127 diode compare to Schottky diodes in terms of cost?
    The BYC8X-600,127 diode is more cost-efficient compared to Schottky diodes.
  9. What are the benefits of low thermal resistance in the BYC8X-600,127 diode?
    Low thermal resistance ensures efficient heat dissipation, which is crucial for maintaining the diode's performance and longevity.
  10. How does the low recovery current of the BYC8X-600,127 diode benefit its applications?
    The low recovery current contributes to high efficiency in switching applications by reducing energy losses during switching operations.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:2.9 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):52 ns
Current - Reverse Leakage @ Vr:150 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack, Isolated Tab
Supplier Device Package:TO-220FP
Operating Temperature - Junction:150°C (Max)
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Similar Products

Part Number BYC8X-600,127 BYC8X-600P,127 BYC58X-600,127 BYC5X-600,127 BYC8-600,127 BYC8D-600,127 BYC8DX-600,127
Manufacturer WeEn Semiconductors NXP USA Inc. WeEn Semiconductors NXP USA Inc. WeEn Semiconductors WeEn Semiconductors NXP USA Inc.
Product Status Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 500 V 600 V 600 V 600 V
Current - Average Rectified (Io) 8A 8A 8A 5A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 2.9 V @ 8 A 1.9 V @ 8 A 3.2 V @ 8 A 2.9 V @ 5 A 2.9 V @ 8 A 2.9 V @ 8 A 2.9 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 52 ns 18 ns 12.5 ns 50 ns 52 ns 20 ns 20 ns
Current - Reverse Leakage @ Vr 150 µA @ 600 V 20 µA @ 600 V 150 µA @ 600 V 100 µA @ 600 V 150 µA @ 600 V 40 µA @ 600 V 40 µA @ 600 V
Capacitance @ Vr, F - - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack TO-220-2 TO-220-2 TO-220-2 Full Pack
Supplier Device Package TO-220FP TO-220F TO-220FP TO-220F TO-220AC TO-220AC TO-220F
Operating Temperature - Junction 150°C (Max) 175°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

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