BYV29-600,127
  • Share:

WeEn Semiconductors BYV29-600,127

Manufacturer No:
BYV29-600,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 600V 9A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYV29-600,127 is an ultrafast rectifier diode produced by WeEn Semiconductors. This component is designed for high-performance applications requiring efficient and reliable rectification. The diode features a TO-220AC package, which is a plastic single-ended package with a heatsink mounted and a 2-lead configuration. This design enhances thermal dissipation and mechanical stability, making it suitable for a variety of industrial and power management applications.

Key Specifications

Parameter Conditions Min Typ Max Unit
VRRM - Repetitive Peak Reverse Voltage - - - 600 V
VRM - Crest Working Reverse Voltage - - - 600 V
IF(AV) - Average Forward Current δ = 0.5; Tmb ≤ 120 °C; square-wave pulse - - 9 A
IFRM - Repetitive Peak Forward Current δ = 0.5; Tmb ≤ 120 °C; square-wave pulse - - 18 A
IFSM - Non-Repetitive Peak Forward Current tp = 10 ms; sine-wave pulse - - 70 A
VF - Forward Voltage IF = 20 A; Tj = 25 °C 1.31 - 1.45 V
IR - Reverse Current VR = 600 V; Tj = 25 °C - - 50 μA
trr - Reverse Recovery Time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C 50 - 60 ns

Key Features

  • Ultrafast Recovery Time: The BYV29-600,127 features a fast reverse recovery time of 50-60 ns, making it ideal for high-frequency applications.
  • High Surge Current Capability: The diode can handle non-repetitive peak forward currents up to 70 A for 10 ms sine-wave pulses.
  • High Reverse Voltage Rating: With a repetitive peak reverse voltage of 600 V, this diode is suitable for applications requiring high voltage handling.
  • Low Forward Voltage Drop: The forward voltage drop is as low as 1.31 V at 20 A and 25 °C, reducing power losses in the system.
  • Thermal Stability: The TO-220AC package with heatsink mounting ensures good thermal dissipation, allowing the diode to operate reliably in high-temperature environments.

Applications

  • Power Supplies: Suitable for use in switching power supplies, DC-DC converters, and other power management circuits.
  • Industrial Control: Used in industrial control systems, motor drives, and other high-power applications.
  • Automotive Systems: Applicable in automotive electronics, including battery charging and power conversion systems.
  • Renewable Energy Systems: Can be used in solar and wind power systems for efficient rectification and power conversion.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BYV29-600,127?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the average forward current rating of the BYV29-600,127?

    The average forward current rating is 9 A.

  3. What is the reverse recovery time of the BYV29-600,127?

    The reverse recovery time is between 50-60 ns.

  4. What is the maximum non-repetitive peak forward current of the BYV29-600,127?

    The maximum non-repetitive peak forward current is 70 A for a 10 ms sine-wave pulse.

  5. What is the forward voltage drop at 20 A and 25 °C?

    The forward voltage drop is between 1.31 V to 1.45 V at 20 A and 25 °C.

  6. What type of package does the BYV29-600,127 come in?

    The diode comes in a TO-220AC package.

  7. What is the thermal resistance from junction to mounting base?

    The thermal resistance from junction to mounting base is up to 2.5 K/W.

  8. What are some common applications of the BYV29-600,127?

    Common applications include power supplies, industrial control systems, automotive electronics, and renewable energy systems.

  9. What is the storage temperature range for the BYV29-600,127?

    The storage temperature range is from -40 °C to 150 °C.

  10. What is the junction temperature rating of the BYV29-600,127?

    The junction temperature rating is up to 150 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):9A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:50 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
335

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYV29-600,127 BYV29X-600,127 BYV29F-600,127 BYV29G-600,127 BYV29-400,127 BYV29-500,127
Manufacturer WeEn Semiconductors WeEn Semiconductors NXP Semiconductors WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 400 V 500 V
Current - Average Rectified (Io) 9A 9A 9A 9A 9A 9A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 8 A 1.26 V @ 8 A 1.9 V @ 8 A 1.25 V @ 8 A 1.25 V @ 8 A 1.25 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 60 ns 35 ns 60 ns 60 ns 60 ns
Current - Reverse Leakage @ Vr 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 400 V 50 µA @ 500 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 Full Pack, Isolated Tab TO-220-2 TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220FP TO-220AC I2PAK TO-220AC TO-220AC
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41

Related Product By Brand

BYV34-400,127
BYV34-400,127
WeEn Semiconductors
DIODE ARRAY GP 400V 20A TO220AB
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
BYC8-600,127
BYC8-600,127
WeEn Semiconductors
DIODE GEN PURP 600V 8A TO220AC
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
BYV29-600PQ
BYV29-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 9A TO220AB
BT151X-500R,127
BT151X-500R,127
WeEn Semiconductors
SCR 500V 12A TO220-3
BT151X-800R/DG,127
BT151X-800R/DG,127
WeEn Semiconductors
SCR 800V 12A TO220F
BT151U-500C,127
BT151U-500C,127
WeEn Semiconductors
SCR 500V 12A IPAK
ACTT2X-800E/DGQ
ACTT2X-800E/DGQ
WeEn Semiconductors
TRIAC SENS GATE 800V 2A TO220F
BT131-800E/L01EP
BT131-800E/L01EP
WeEn Semiconductors
BT131-800E/L01/TO-92/STANDARD
BT138-600G0Q
BT138-600G0Q
WeEn Semiconductors
BT138-600G0/SIL3P/STANDARD MAR
BTA316-800C/L05Q
BTA316-800C/L05Q
WeEn Semiconductors
BTA316-800C L05Q SIL3P STANDARD