Overview
The BUJ100LR,412 is a high-performance NPN bipolar junction transistor (BJT) manufactured by WeEn Semiconductors. This transistor is designed for applications requiring high voltage and current handling capabilities. It features a TO-92 package, making it suitable for through-hole mounting. The BUJ100LR,412 is RoHS compliant and is widely used in electronic circuits that demand small-signal amplification with minimal space consumption.
Key Specifications
Attribute | Value |
---|---|
Transistor Type | NPN |
Maximum DC Collector Current | 1 A |
Maximum Collector Emitter Voltage | 700 V |
Package Type | TO-92 |
Mounting Type | Through Hole |
Maximum Power Dissipation | 2.1 W |
Transistor Configuration | Single |
Maximum Collector Base Voltage | 700 V |
Maximum Emitter Base Voltage | 9 V |
Pin Count | 3 |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Dimensions | 4.8 x 4.2 x 5.2 mm |
Key Features
- High Voltage Handling: The BUJ100LR,412 can handle up to 700 V, making it suitable for high-voltage applications.
- High Current Capability: With a maximum DC collector current of 1 A, this transistor is ideal for applications requiring significant current handling.
- Compact Package: The TO-92 package is compact and suitable for through-hole mounting, making it ideal for space-constrained designs.
- RoHS Compliance: The transistor is RoHS compliant, ensuring it meets environmental standards.
- Single Transistor Configuration: It is a single transistor configuration, providing simplicity and reliability in circuit design.
Applications
- Small-Signal Amplification: The BUJ100LR,412 is commonly used in electronic circuits that require small-signal amplification, particularly in applications where space is limited.
- High-Voltage Circuits: Its high voltage handling capability makes it suitable for use in high-voltage circuits, such as power supplies, audio amplifiers, and other high-voltage electronic devices.
- Industrial and Automotive Systems: It can be used in various industrial and automotive systems that require reliable and high-performance transistor operation.
Q & A
- What is the transistor type of the BUJ100LR,412?
The BUJ100LR,412 is an NPN (negative-positive-negative) bipolar junction transistor (BJT).
- What is the maximum DC collector current of the BUJ100LR,412?
The maximum DC collector current is 1 A.
- What is the maximum collector emitter voltage of the BUJ100LR,412?
The maximum collector emitter voltage is 700 V.
- What package type does the BUJ100LR,412 use?
The BUJ100LR,412 uses a TO-92 package.
- Is the BUJ100LR,412 RoHS compliant?
Yes, the BUJ100LR,412 is RoHS compliant.
- What is the maximum operating temperature of the BUJ100LR,412?
The maximum operating temperature is +150 °C.
- What are the dimensions of the BUJ100LR,412?
The dimensions are 4.8 x 4.2 x 5.2 mm.
- What is the maximum power dissipation of the BUJ100LR,412?
The maximum power dissipation is 2.1 W.
- What are common applications for the BUJ100LR,412?
Common applications include small-signal amplification, high-voltage circuits, and various industrial and automotive systems.
- What is the mounting type of the BUJ100LR,412?
The mounting type is through-hole (THT).
- What is the current gain of the BUJ100LR,412?
The current gain is between 5 and 20.