BYQ30E-200,127
  • Share:

WeEn Semiconductors BYQ30E-200,127

Manufacturer No:
BYQ30E-200,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE ARRAY GP 200V 16A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ30E-200,127 is a dual ultrafast power diode array produced by WeEn Semiconductors. This component is designed for high-frequency switched-mode power supplies, particularly as output rectifiers. WeEn Semiconductors, a global joint venture between NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd (JAC Capital), specializes in bipolar power technology and offers a wide range of industry-leading bipolar power products.

Key Specifications

ParameterConditionsMinMaxUnit
VRRM (Reverse Voltage)--200V
IF(AV) (Average Forward Current)--16A
trr (Reverse Recovery Time)--35ns
VF (Forward Voltage)IF = 16 A, TJ = 125°C-1.2V
Package--TO-220-3-

Key Features

  • Ultrafast recovery time, making it suitable for high-frequency applications.
  • Low forward voltage drop, enhancing efficiency in power supplies.
  • High surge current capability.
  • Common cathode configuration in a TO-220-3 package.
  • Designed for use in output rectifiers in switched-mode power supplies.

Applications

  • High-frequency switched-mode power supplies.
  • Automotive electronics.
  • Telecommunications equipment.
  • Computer and consumer electronics.
  • Intelligent home appliances and lighting systems.
  • Power management systems.

Q & A

  1. What is the BYQ30E-200,127 used for? The BYQ30E-200,127 is used as an output rectifier in high-frequency switched-mode power supplies.
  2. What is the maximum reverse voltage (VRRM) of the BYQ30E-200,127? The maximum reverse voltage (VRRM) is 200 V.
  3. What is the average forward current (IF(AV)) of the BYQ30E-200,127? The average forward current (IF(AV)) is 16 A.
  4. What is the reverse recovery time (trr) of the BYQ30E-200,127? The reverse recovery time (trr) is 35 ns.
  5. What is the forward voltage drop (VF) of the BYQ30E-200,127 at 16 A and 125°C? The forward voltage drop (VF) is 1.2 V.
  6. In what package is the BYQ30E-200,127 available? The BYQ30E-200,127 is available in a TO-220-3 package.
  7. Who manufactures the BYQ30E-200,127? The BYQ30E-200,127 is manufactured by WeEn Semiconductors.
  8. What are some common applications of the BYQ30E-200,127? Common applications include automotive electronics, telecommunications equipment, computer and consumer electronics, intelligent home appliances, and power management systems.
  9. What are the key features of the BYQ30E-200,127? Key features include ultrafast recovery time, low forward voltage drop, high surge current capability, and a common cathode configuration.
  10. Where can I find detailed specifications for the BYQ30E-200,127? Detailed specifications can be found on the datasheets available from WeEn Semiconductors, Mouser Electronics, and Digi-Key websites.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):16A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 16 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:30 µA @ 200 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
0 Remaining View Similar

In Stock

-
491

Please send RFQ , we will respond immediately.

Related Product By Categories

BAT54A-TP
BAT54A-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 30V SOT23
BAV70LT3G
BAV70LT3G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
BAV99W
BAV99W
Diotec Semiconductor
DIODE SOT-323 85V 0.2A 4NS
BAS21VD,165
BAS21VD,165
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
STTH16L06CG-TR
STTH16L06CG-TR
STMicroelectronics
DIODE ARRAY GP 600V 10A D2PAK
BAS40-05-HE3-18
BAS40-05-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
BAS21SLT1
BAS21SLT1
onsemi
DIODE ARRAY GP 250V 225MA SOT23
BAW56T,115
BAW56T,115
NXP USA Inc.
DIODE ARRAY GP 90V 150MA SC75
BAS40-06/DG/B2,215
BAS40-06/DG/B2,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V TO236AB
MBR2545CT-7HE3/45
MBR2545CT-7HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY ARRAY TO220AB
BAS28 TR PBFREE
BAS28 TR PBFREE
Central Semiconductor Corp
DIODE SW 75V 250MA SOT143
BAV99HYFHT116
BAV99HYFHT116
Rohm Semiconductor
HIGH SPEED SWITCHING, 80V, 215MA

Related Product By Brand

BYV34-400,127
BYV34-400,127
WeEn Semiconductors
DIODE ARRAY GP 400V 20A TO220AB
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
BT151-500R,127
BT151-500R,127
WeEn Semiconductors
SCR 500V 12A TO220AB
BT151Y-650LTFQ
BT151Y-650LTFQ
WeEn Semiconductors
PLANAR PASSIVATED SILICON CONTRO
BT169D,112
BT169D,112
WeEn Semiconductors
SCR 400V 800MA TO92-3
BT169D/DG,126
BT169D/DG,126
WeEn Semiconductors
SCR 400V 800MA TO92-3
ACT108W-600E,135
ACT108W-600E,135
WeEn Semiconductors
TRIAC SENS GATE 600V 0.8A SC73
BTA316-600ET,127
BTA316-600ET,127
WeEn Semiconductors
TRIAC SENS GATE 600V 16A TO220AB
BTA140-800,127
BTA140-800,127
WeEn Semiconductors
TRIAC 800V 25A TO220AB
BT138X-800/L02Q
BT138X-800/L02Q
WeEn Semiconductors
BT138X-800/L02/TO-220F/STANDAR
BUJ100,412
BUJ100,412
WeEn Semiconductors
TRANS NPN 400V 1A TO92-3