BYQ30E-200,127
  • Share:

WeEn Semiconductors BYQ30E-200,127

Manufacturer No:
BYQ30E-200,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE ARRAY GP 200V 16A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ30E-200,127 is a dual ultrafast power diode array produced by WeEn Semiconductors. This component is designed for high-frequency switched-mode power supplies, particularly as output rectifiers. WeEn Semiconductors, a global joint venture between NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd (JAC Capital), specializes in bipolar power technology and offers a wide range of industry-leading bipolar power products.

Key Specifications

ParameterConditionsMinMaxUnit
VRRM (Reverse Voltage)--200V
IF(AV) (Average Forward Current)--16A
trr (Reverse Recovery Time)--35ns
VF (Forward Voltage)IF = 16 A, TJ = 125°C-1.2V
Package--TO-220-3-

Key Features

  • Ultrafast recovery time, making it suitable for high-frequency applications.
  • Low forward voltage drop, enhancing efficiency in power supplies.
  • High surge current capability.
  • Common cathode configuration in a TO-220-3 package.
  • Designed for use in output rectifiers in switched-mode power supplies.

Applications

  • High-frequency switched-mode power supplies.
  • Automotive electronics.
  • Telecommunications equipment.
  • Computer and consumer electronics.
  • Intelligent home appliances and lighting systems.
  • Power management systems.

Q & A

  1. What is the BYQ30E-200,127 used for? The BYQ30E-200,127 is used as an output rectifier in high-frequency switched-mode power supplies.
  2. What is the maximum reverse voltage (VRRM) of the BYQ30E-200,127? The maximum reverse voltage (VRRM) is 200 V.
  3. What is the average forward current (IF(AV)) of the BYQ30E-200,127? The average forward current (IF(AV)) is 16 A.
  4. What is the reverse recovery time (trr) of the BYQ30E-200,127? The reverse recovery time (trr) is 35 ns.
  5. What is the forward voltage drop (VF) of the BYQ30E-200,127 at 16 A and 125°C? The forward voltage drop (VF) is 1.2 V.
  6. In what package is the BYQ30E-200,127 available? The BYQ30E-200,127 is available in a TO-220-3 package.
  7. Who manufactures the BYQ30E-200,127? The BYQ30E-200,127 is manufactured by WeEn Semiconductors.
  8. What are some common applications of the BYQ30E-200,127? Common applications include automotive electronics, telecommunications equipment, computer and consumer electronics, intelligent home appliances, and power management systems.
  9. What are the key features of the BYQ30E-200,127? Key features include ultrafast recovery time, low forward voltage drop, high surge current capability, and a common cathode configuration.
  10. Where can I find detailed specifications for the BYQ30E-200,127? Detailed specifications can be found on the datasheets available from WeEn Semiconductors, Mouser Electronics, and Digi-Key websites.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):16A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 16 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:30 µA @ 200 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
0 Remaining View Similar

In Stock

-
491

Please send RFQ , we will respond immediately.

Related Product By Categories

BAV170_R1_00001
BAV170_R1_00001
Panjit International Inc.
SOT-23, SWITCHING
BAV99WT1G
BAV99WT1G
onsemi
DIODE ARRAY GP 100V 215MA SC70-3
BAV99DW-7-F
BAV99DW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 215MA SOT363
BAV23A,215
BAV23A,215
Nexperia USA Inc.
DIODE ARRAY GP 200V 225MA SOT23
BAS40DW-06-7-F
BAS40DW-06-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT363
STPS61170CW
STPS61170CW
STMicroelectronics
DIODE ARRAY SCHOTTKY 170V TO247
STPS40170CT
STPS40170CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 170V TO220
BAT721AC_R1_00001
BAT721AC_R1_00001
Panjit International Inc.
SCHOTTKY BARRIER (DOUBLE) DIODES
STPS20150CG
STPS20150CG
STMicroelectronics
DIODE ARRAY SCHOTTKY 150V D2PAK
BAS70-04E6327
BAS70-04E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BAS7004TC
BAS7004TC
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT23-3
BAW56W/ZLF
BAW56W/ZLF
Nexperia USA Inc.
DIODE ARRAY GEN PURP 90V SOT323

Related Product By Brand

BYV42E-200,127
BYV42E-200,127
WeEn Semiconductors
DIODE ARRAY GP 200V 30A TO220AB
BYV29-600PQ
BYV29-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 9A TO220AB
BT169D-L,116
BT169D-L,116
WeEn Semiconductors
SCR 400V 800MA TO92-3
BT151-650C,127
BT151-650C,127
WeEn Semiconductors
SCR 650V 12A TO220AB
BTA201W-800E,115
BTA201W-800E,115
WeEn Semiconductors
TRIAC SENS GATE 800V 1A SC73
BT139X-600E,127
BT139X-600E,127
WeEn Semiconductors
TRIAC SENS GATE 600V 16A TO220-3
BT134-600G,127
BT134-600G,127
WeEn Semiconductors
TRIAC 600V 4A SOT82-3
BTA225B-800B,118
BTA225B-800B,118
WeEn Semiconductors
TRIAC 800V 25A D2PAK
BT131W-600,135
BT131W-600,135
WeEn Semiconductors
TRIAC SENS GATE 600V 1A SC73
BT138X-800F,127
BT138X-800F,127
WeEn Semiconductors
TRIAC 800V 12A TO220-3
BT139-600-0Q
BT139-600-0Q
WeEn Semiconductors
BT139-600-0/SIL3P/STANDARD MAR
BT139-600-0TQ
BT139-600-0TQ
WeEn Semiconductors
BT139-600-0T/SIL3P/STANDARD MA