BYQ30E-200,127
  • Share:

WeEn Semiconductors BYQ30E-200,127

Manufacturer No:
BYQ30E-200,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE ARRAY GP 200V 16A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ30E-200,127 is a dual ultrafast power diode array produced by WeEn Semiconductors. This component is designed for high-frequency switched-mode power supplies, particularly as output rectifiers. WeEn Semiconductors, a global joint venture between NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd (JAC Capital), specializes in bipolar power technology and offers a wide range of industry-leading bipolar power products.

Key Specifications

ParameterConditionsMinMaxUnit
VRRM (Reverse Voltage)--200V
IF(AV) (Average Forward Current)--16A
trr (Reverse Recovery Time)--35ns
VF (Forward Voltage)IF = 16 A, TJ = 125°C-1.2V
Package--TO-220-3-

Key Features

  • Ultrafast recovery time, making it suitable for high-frequency applications.
  • Low forward voltage drop, enhancing efficiency in power supplies.
  • High surge current capability.
  • Common cathode configuration in a TO-220-3 package.
  • Designed for use in output rectifiers in switched-mode power supplies.

Applications

  • High-frequency switched-mode power supplies.
  • Automotive electronics.
  • Telecommunications equipment.
  • Computer and consumer electronics.
  • Intelligent home appliances and lighting systems.
  • Power management systems.

Q & A

  1. What is the BYQ30E-200,127 used for? The BYQ30E-200,127 is used as an output rectifier in high-frequency switched-mode power supplies.
  2. What is the maximum reverse voltage (VRRM) of the BYQ30E-200,127? The maximum reverse voltage (VRRM) is 200 V.
  3. What is the average forward current (IF(AV)) of the BYQ30E-200,127? The average forward current (IF(AV)) is 16 A.
  4. What is the reverse recovery time (trr) of the BYQ30E-200,127? The reverse recovery time (trr) is 35 ns.
  5. What is the forward voltage drop (VF) of the BYQ30E-200,127 at 16 A and 125°C? The forward voltage drop (VF) is 1.2 V.
  6. In what package is the BYQ30E-200,127 available? The BYQ30E-200,127 is available in a TO-220-3 package.
  7. Who manufactures the BYQ30E-200,127? The BYQ30E-200,127 is manufactured by WeEn Semiconductors.
  8. What are some common applications of the BYQ30E-200,127? Common applications include automotive electronics, telecommunications equipment, computer and consumer electronics, intelligent home appliances, and power management systems.
  9. What are the key features of the BYQ30E-200,127? Key features include ultrafast recovery time, low forward voltage drop, high surge current capability, and a common cathode configuration.
  10. Where can I find detailed specifications for the BYQ30E-200,127? Detailed specifications can be found on the datasheets available from WeEn Semiconductors, Mouser Electronics, and Digi-Key websites.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):16A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 16 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:30 µA @ 200 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
0 Remaining View Similar

In Stock

-
491

Please send RFQ , we will respond immediately.

Related Product By Categories

BAV170_R1_00001
BAV170_R1_00001
Panjit International Inc.
SOT-23, SWITCHING
BAV70LT3G
BAV70LT3G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
BAT54BRW-TP
BAT54BRW-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 30V SOT363
BAV70W
BAV70W
Diotec Semiconductor
DIODE SOT-323 75V 0.17A 4NS
MBRB10100CT
MBRB10100CT
SMC Diode Solutions
DIODE ARRAY SCHOTTKY 100V D2PAK
STTH3003CW
STTH3003CW
STMicroelectronics
DIODE ARRAY GP 300V 15A TO247-3
BAT54CQ-13
BAT54CQ-13
Diodes Incorporated
SCHOTTKY DIODE SOT23 T&R 10K
BAW56SH6327XTSA1
BAW56SH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BYQ28EB-200HE3_A/I
BYQ28EB-200HE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO263AB
BAS40-04E6327
BAS40-04E6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
BAS 40-05 B5003
BAS 40-05 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
MURD620CTH
MURD620CTH
onsemi
DIODE GEN PURPOSE

Related Product By Brand

BT151X-650LTNQ
BT151X-650LTNQ
WeEn Semiconductors
SCR 650V 12A TO220F
BT151-800R,127
BT151-800R,127
WeEn Semiconductors
SCR 800V 12A TO220AB
BT138-600E,127
BT138-600E,127
WeEn Semiconductors
TRIAC SENS GATE 600V 12A TO220AB
BT134-600D,127
BT134-600D,127
WeEn Semiconductors
TRIAC SENS GATE 600V 4A SOT82-3
BT136-600D,127
BT136-600D,127
WeEn Semiconductors
TRIAC SENS GATE 600V 4A TO220AB
BT134-600G,127
BT134-600G,127
WeEn Semiconductors
TRIAC 600V 4A SOT82-3
BT137B-800F,118
BT137B-800F,118
WeEn Semiconductors
TRIAC 800V 8A D2PAK
BT138-600G0TQ
BT138-600G0TQ
WeEn Semiconductors
BT138-600G0T/SIL3P/STANDARD MA
BTA420X-800CT/L03Q
BTA420X-800CT/L03Q
WeEn Semiconductors
BTA420X-800CT/L03/TO-220F/STAN
PHE13005,127
PHE13005,127
WeEn Semiconductors
TRANS NPN 400V 4A TO220AB
BUJ100,126
BUJ100,126
WeEn Semiconductors
TRANS NPN 400V 1A TO92-3
PHE13005X/01,127
PHE13005X/01,127
WeEn Semiconductors
TRANS NPN 400V 4A TO-220F