MBR2545CT-7HE3/45
  • Share:

Vishay General Semiconductor - Diodes Division MBR2545CT-7HE3/45

Manufacturer No:
MBR2545CT-7HE3/45
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE SCHOTTKY ARRAY TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR2545CT-7HE3/45 is a dual common cathode Schottky rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-performance applications requiring low forward voltage drop and high current handling. It is part of the MBR25xxCT series, which features advanced Schottky barrier technology for improved efficiency and reliability.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 45 V
Maximum Average Forward Rectified Current IF(AV) 25 A (total device), 12.5 A (per diode) A
Peak Forward Surge Current IFSM 150 A A
Maximum Instantaneous Forward Voltage VF 0.73 V at 30 A, 0.82 V at 30 A (TC = 25°C) V
Operating Junction Temperature Range TJ -65 to +150 °C °C
Storage Temperature Range TSTG -65 to +175 °C °C
Package TO-220AB, ITO-220AB
Thermal Resistance, Junction to Case RθJC 1.5 °C/W °C/W

Key Features

  • Low Forward Voltage Drop: The MBR2545CT-7HE3/45 features a low forward voltage drop of 0.73 V at 30 A, enhancing efficiency in high-current applications.
  • High Current Handling: Capable of handling a maximum average forward rectified current of 25 A (12.5 A per diode) and peak forward surge current of 150 A.
  • High Operating Temperature: Operates within a junction temperature range of -65 to +150 °C, making it suitable for demanding environments.
  • RoHS Compliant: The E3 suffix indicates that the device is RoHS-compliant and meets JESD 201 class 1A whisker test requirements.
  • High ESD Robustness: The device has high electrostatic discharge (ESD) robustness, with a human body model rating of up to 25 kV.
  • Isolation Voltage: For the ITO-220AB package, the isolation voltage from terminal to heatsink is 1500 V.

Applications

  • Power Supplies: Suitable for use in switching power supplies, DC-DC converters, and other high-efficiency power conversion applications.
  • Automotive Systems: Can be used in automotive systems requiring high reliability and performance under varying temperature conditions.
  • Industrial Equipment: Ideal for industrial applications such as motor drives, power inverters, and other high-power electronic systems.
  • Consumer Electronics: Used in consumer electronics where high current handling and low forward voltage drop are critical.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MBR2545CT-7HE3/45?

    The maximum repetitive peak reverse voltage is 45 V.

  2. What is the maximum average forward rectified current for this device?

    The maximum average forward rectified current is 25 A for the total device, with 12.5 A per diode.

  3. What is the operating junction temperature range of the MBR2545CT-7HE3/45?

    The operating junction temperature range is -65 to +150 °C.

  4. Is the MBR2545CT-7HE3/45 RoHS compliant?
  5. What is the thermal resistance from junction to case for this device?

    The thermal resistance from junction to case is 1.5 °C/W.

  6. What are the package options available for the MBR2545CT-7HE3/45?

    The device is available in TO-220AB and ITO-220AB packages.

  7. What is the maximum instantaneous forward voltage at 30 A for this device?

    The maximum instantaneous forward voltage at 30 A is 0.73 V at 125 °C and 0.82 V at 25 °C.

  8. What is the peak forward surge current rating for the MBR2545CT-7HE3/45?

    The peak forward surge current rating is 150 A.

  9. Does the MBR2545CT-7HE3/45 have any special ESD protection features?
  10. What are some common applications for the MBR2545CT-7HE3/45?

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):45 V
Current - Average Rectified (Io) (per Diode):12.5A
Voltage - Forward (Vf) (Max) @ If:820 mV @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 µA @ 45 V
Operating Temperature - Junction:-65°C ~ 150°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
0 Remaining View Similar

In Stock

-
246

Please send RFQ , we will respond immediately.

Same Series
MBRB2560CT-E3/81
MBRB2560CT-E3/81
DIODE ARRAY SCHOTTKY 60V TO263AB
MBRB2535CT-E3/81
MBRB2535CT-E3/81
DIODE ARRAY SCHOTTKY 35V TO263AB
MBRB2535CTHE3/81
MBRB2535CTHE3/81
DIODE ARRAY SCHOTTKY 35V TO263AB
MBRB2560CTHE3/81
MBRB2560CTHE3/81
DIODE ARRAY SCHOTTKY 60V TO263AB
MBR2545CT-E3/4W
MBR2545CT-E3/4W
DIODE ARRAY SCHOTTKY 45V TO220AB
MBR2545CTHE3/45
MBR2545CTHE3/45
DIODE ARRAY SCHOTTKY 45V TO220AB
MBRB2535CT-E3/45
MBRB2535CT-E3/45
DIODE ARRAY SCHOTTKY 35V TO263AB
MBRB2535CTHE3/45
MBRB2535CTHE3/45
DIODE ARRAY SCHOTTKY 35V TO263AB
MBRB2550CT-E3/45
MBRB2550CT-E3/45
DIODE ARRAY SCHOTTKY 50V TO263AB
MBRF2535CT-E3/45
MBRF2535CT-E3/45
DIODE ARRAY SCHOTTKY 35V ITO220
MBRF2560CTHE3/45
MBRF2560CTHE3/45
DIODE ARRAY SCHOTTKY 60V ITO220
MBRB2535CTHE3_A/I
MBRB2535CTHE3_A/I
DIODE ARRAY SCHOTTKY 35V TO263AB

Related Product By Categories

BAS56,215
BAS56,215
Nexperia USA Inc.
DIODE ARRAY GP 60V 200MA SOT143B
BAS7005WH6327XTSA1
BAS7005WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BAW56
BAW56
Fairchild Semiconductor
HIGH-SPEED SWITCHING DIODES
STTH1002CGY-TR
STTH1002CGY-TR
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
BAS21VD,165
BAS21VD,165
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
BAT721AC_R1_00001
BAT721AC_R1_00001
Panjit International Inc.
SCHOTTKY BARRIER (DOUBLE) DIODES
BAS21S RFG
BAS21S RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 250V 200MA SOT23
BAS28 TR TIN/LEAD
BAS28 TR TIN/LEAD
Central Semiconductor Corp
DIODE SW 75V 250MA SOT143
MBR2060CT-G
MBR2060CT-G
Comchip Technology
DIODE ARRAY SCHOTTKY 60V TO220AB
BAV99W/DG/B3135
BAV99W/DG/B3135
NXP USA Inc.
NEXPERIA BAV99 - DUAL HIGH-SPEE
BYV32EB-200PQ
BYV32EB-200PQ
WeEn Semiconductors
DIODE ARRAY GP 200V 20A D2PAK
BYV32EB-200PJ
BYV32EB-200PJ
WeEn Semiconductors
DIODE ARRAY GP 200V 20A D2PAK

Related Product By Brand

SM6T6V8CA-E3/5B
SM6T6V8CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM15T39CA-M3/9AT
SM15T39CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM6T220CAHM3/I
SM6T220CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
BAS40-06-HE3-18
BAS40-06-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
BYQ28EF-100-E3/45
BYQ28EF-100-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 100V 5A ITO220AB
MBR1545CT-1
MBR1545CT-1
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 45V TO262
1N4733A-TAP
1N4733A-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 1.3W DO41
BZX84C39-E3-08
BZX84C39-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 300MW SOT23-3
BZX384B15-E3-18
BZX384B15-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 200MW SOD323
BZX384B75-E3-18
BZX384B75-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 200MW SOD323
BZX384B27-E3-08
BZX384B27-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 27V 200MW SOD323
BZX384B3V3-G3-18
BZX384B3V3-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 200MW SOD323