MBR2545CT-7HE3/45
  • Share:

Vishay General Semiconductor - Diodes Division MBR2545CT-7HE3/45

Manufacturer No:
MBR2545CT-7HE3/45
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE SCHOTTKY ARRAY TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR2545CT-7HE3/45 is a dual common cathode Schottky rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-performance applications requiring low forward voltage drop and high current handling. It is part of the MBR25xxCT series, which features advanced Schottky barrier technology for improved efficiency and reliability.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 45 V
Maximum Average Forward Rectified Current IF(AV) 25 A (total device), 12.5 A (per diode) A
Peak Forward Surge Current IFSM 150 A A
Maximum Instantaneous Forward Voltage VF 0.73 V at 30 A, 0.82 V at 30 A (TC = 25°C) V
Operating Junction Temperature Range TJ -65 to +150 °C °C
Storage Temperature Range TSTG -65 to +175 °C °C
Package TO-220AB, ITO-220AB
Thermal Resistance, Junction to Case RθJC 1.5 °C/W °C/W

Key Features

  • Low Forward Voltage Drop: The MBR2545CT-7HE3/45 features a low forward voltage drop of 0.73 V at 30 A, enhancing efficiency in high-current applications.
  • High Current Handling: Capable of handling a maximum average forward rectified current of 25 A (12.5 A per diode) and peak forward surge current of 150 A.
  • High Operating Temperature: Operates within a junction temperature range of -65 to +150 °C, making it suitable for demanding environments.
  • RoHS Compliant: The E3 suffix indicates that the device is RoHS-compliant and meets JESD 201 class 1A whisker test requirements.
  • High ESD Robustness: The device has high electrostatic discharge (ESD) robustness, with a human body model rating of up to 25 kV.
  • Isolation Voltage: For the ITO-220AB package, the isolation voltage from terminal to heatsink is 1500 V.

Applications

  • Power Supplies: Suitable for use in switching power supplies, DC-DC converters, and other high-efficiency power conversion applications.
  • Automotive Systems: Can be used in automotive systems requiring high reliability and performance under varying temperature conditions.
  • Industrial Equipment: Ideal for industrial applications such as motor drives, power inverters, and other high-power electronic systems.
  • Consumer Electronics: Used in consumer electronics where high current handling and low forward voltage drop are critical.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MBR2545CT-7HE3/45?

    The maximum repetitive peak reverse voltage is 45 V.

  2. What is the maximum average forward rectified current for this device?

    The maximum average forward rectified current is 25 A for the total device, with 12.5 A per diode.

  3. What is the operating junction temperature range of the MBR2545CT-7HE3/45?

    The operating junction temperature range is -65 to +150 °C.

  4. Is the MBR2545CT-7HE3/45 RoHS compliant?
  5. What is the thermal resistance from junction to case for this device?

    The thermal resistance from junction to case is 1.5 °C/W.

  6. What are the package options available for the MBR2545CT-7HE3/45?

    The device is available in TO-220AB and ITO-220AB packages.

  7. What is the maximum instantaneous forward voltage at 30 A for this device?

    The maximum instantaneous forward voltage at 30 A is 0.73 V at 125 °C and 0.82 V at 25 °C.

  8. What is the peak forward surge current rating for the MBR2545CT-7HE3/45?

    The peak forward surge current rating is 150 A.

  9. Does the MBR2545CT-7HE3/45 have any special ESD protection features?
  10. What are some common applications for the MBR2545CT-7HE3/45?

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):45 V
Current - Average Rectified (Io) (per Diode):12.5A
Voltage - Forward (Vf) (Max) @ If:820 mV @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 µA @ 45 V
Operating Temperature - Junction:-65°C ~ 150°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
0 Remaining View Similar

In Stock

-
246

Please send RFQ , we will respond immediately.

Same Series
MBRB2545CT-E3/81
MBRB2545CT-E3/81
DIODE ARRAY SCHOTTKY 45V TO263AB
MBRF2560CT-E3/45
MBRF2560CT-E3/45
DIODE ARRAY SCHOTTKY 60V ITO220
MBRF2560CT/45
MBRF2560CT/45
DIODE ARRAY SCHOTTKY 60V ITO220
MBRB2535CT-E3/81
MBRB2535CT-E3/81
DIODE ARRAY SCHOTTKY 35V TO263AB
MBRB2560CTHE3/81
MBRB2560CTHE3/81
DIODE ARRAY SCHOTTKY 60V TO263AB
MBR2535CTHE3/45
MBR2535CTHE3/45
DIODE ARRAY SCHOTTKY 35V TO220AB
MBR2545CT-E3/4W
MBR2545CT-E3/4W
DIODE ARRAY SCHOTTKY 45V TO220AB
MBRB2535CT-E3/45
MBRB2535CT-E3/45
DIODE ARRAY SCHOTTKY 35V TO263AB
MBRB2550CTHE3/45
MBRB2550CTHE3/45
DIODE ARRAY SCHOTTKY 50V TO263AB
MBRF2535CTHE3/45
MBRF2535CTHE3/45
DIODE ARRAY SCHOTTKY 35V ITO220
MBRF2560CTHE3/45
MBRF2560CTHE3/45
DIODE ARRAY SCHOTTKY 60V ITO220
MBR2545CT801HE3/45
MBR2545CT801HE3/45
DIODE SCHOTTKY ARRAY TO220AB

Related Product By Categories

BAT54A-TP
BAT54A-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 30V SOT23
BAV99BRVA-7
BAV99BRVA-7
Diodes Incorporated
DIODE ARRAY GP 75V 215MA SOT563
BAS7006B5003
BAS7006B5003
Infineon Technologies
SCHOTTKY DIODE
BAV70_R1_00001
BAV70_R1_00001
Panjit International Inc.
SOT-23, SWITCHING
BAS16VY,115
BAS16VY,115
Nexperia USA Inc.
DIODE ARRAY GP 100V 200MA 6TSSOP
BAW567DW-7-F
BAW567DW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
STTH16L06CG-TR
STTH16L06CG-TR
STMicroelectronics
DIODE ARRAY GP 600V 10A D2PAK
BAW56 RFG
BAW56 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
BAS70-05 RFG
BAS70-05 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 70MA SOT23
BYV42E-200,127
BYV42E-200,127
WeEn Semiconductors
DIODE ARRAY GP 200V 30A TO220AB
BAV99W/DG/B3F
BAV99W/DG/B3F
Nexperia USA Inc.
DIODE ARRAY GP 100V 150MA SC70
NRVBD660CTT4G
NRVBD660CTT4G
onsemi
DIODE ARRAY SCHOTTKY 60V 3A DPAK

Related Product By Brand

SM6T150A-E3/5B
SM6T150A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM6T220CA-E3/5B
SM6T220CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T100CA-M3/9AT
SM15T100CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
SM15T68AHM3/H
SM15T68AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM15T6V8AHM3/H
SM15T6V8AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
SM6T68CAHM3/I
SM6T68CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
BAS70-04-E3-08
BAS70-04-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
BYQ28EF-100-E3/45
BYQ28EF-100-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 100V 5A ITO220AB
MURB1620CTTRL
MURB1620CTTRL
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 8A D2PAK
1N4148WS-HE3-08
1N4148WS-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
1N4004GPE-E3/54
1N4004GPE-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
BZX84C27-G3-08
BZX84C27-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 27V 300MW SOT23-3