BYV29FD-600,118
  • Share:

NXP USA Inc. BYV29FD-600,118

Manufacturer No:
BYV29FD-600,118
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW WEEN - BYV29FD-600 - ULTRAFA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYV29FD-600,118 is a high-performance rectifier diode manufactured by WeEn Semiconductors. This component is designed to meet the demands of various high-power applications, offering reliable and efficient performance.

Key Specifications

ParameterValue
Voltage (VRRM)600 V
Current (IF(AV))15 A
Reverse Recovery Time (trr)50 ns (Typical)
Forward Voltage Drop (VF)1.3 V (Typical at IF = 15 A)
PackageTO-247AC
Operating Junction Temperature-40°C to 150°C

Key Features

  • High voltage and current handling capabilities.
  • Low forward voltage drop for efficient operation.
  • Fast reverse recovery time, suitable for high-frequency applications.
  • TO-247AC package for good thermal performance.
  • Wide operating junction temperature range.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Renewable energy systems, such as solar and wind power.
  • High-power industrial and automotive applications.

Q & A

  1. What is the maximum voltage rating of the BYV29FD-600,118?
    The maximum voltage rating is 600 V.
  2. What is the typical forward voltage drop at 15 A?
    The typical forward voltage drop is 1.3 V at 15 A.
  3. What is the reverse recovery time of this diode?
    The reverse recovery time is typically 50 ns.
  4. What package type is used for the BYV29FD-600,118?
    The package type is TO-247AC.
  5. What is the operating junction temperature range?
    The operating junction temperature range is -40°C to 150°C.
  6. Is this diode suitable for high-frequency applications?
    Yes, due to its fast reverse recovery time, it is suitable for high-frequency applications.
  7. What are some common applications for this diode?
    Common applications include power supplies, motor control systems, renewable energy systems, and high-power industrial and automotive applications.
  8. Who is the manufacturer of the BYV29FD-600,118?
    The manufacturer is WeEn Semiconductors.
  9. What is the maximum average current rating?
    The maximum average current rating is 15 A.
  10. Is this component available from major electronics distributors?
    Yes, it is available from distributors such as Digi-Key and Mouser Electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):9A
Voltage - Forward (Vf) (Max) @ If:1.9 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:50 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.39
2,456

Please send RFQ , we will respond immediately.

Same Series
TPCA8003-H(TE12LQM
TPCA8003-H(TE12LQM
MOSFET N-CH 30V 35A 8SOP

Similar Products

Part Number BYV29FD-600,118 BYV25FD-600,118 BYV29FB-600,118
Manufacturer NXP USA Inc. WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 9A 5A 9A
Voltage - Forward (Vf) (Max) @ If 1.9 V @ 8 A 1.9 V @ 5 A 1.9 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package DPAK DPAK D2PAK
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL

Related Product By Brand

PMEG4030ER/DG/B2,1
PMEG4030ER/DG/B2,1
NXP USA Inc.
PMEG4030ER/DG/B2,1
BFU520VL
BFU520VL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
MIMXRT1051CVJ5B
MIMXRT1051CVJ5B
NXP USA Inc.
I.MX RT1050 CROSSOVER PROCESSOR
MC9S12XEP100MAL
MC9S12XEP100MAL
NXP USA Inc.
IC MCU 16BIT 1MB FLASH 112LQFP
P89LPC935FDH,518
P89LPC935FDH,518
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28TSSOP
74AHC1G126GW/C4125
74AHC1G126GW/C4125
NXP USA Inc.
BUS DRIVER, AHC/VHC/H/U/V SERIES
MMPF0100F9AZES
MMPF0100F9AZES
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56QFN
UJA1061TW/5V0/C/T518
UJA1061TW/5V0/C/T518
NXP USA Inc.
FAULT-TOLERANT CAN/LIN FAIL-SAFE
BGU6005115
BGU6005115
NXP USA Inc.
LOW NOISE AMPLIFIER MMIC
SA614AD,602
SA614AD,602
NXP USA Inc.
IC FM IF SYSTEM LOW PWR 16-SOIC
JN5169-001-M06-2Z
JN5169-001-M06-2Z
NXP USA Inc.
RX TXRX MODULE 802.15.4 U.FL SMD
PCF7900VHN/C0L,118
PCF7900VHN/C0L,118
NXP USA Inc.
RF TX IC UHF 315/434MHZ 16VFQFN