BYC15-600P127
  • Share:

NXP USA Inc. BYC15-600P127

Manufacturer No:
BYC15-600P127
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
HYPERFAST RECTIFIER DIODE TO 22
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYC15-600P127 is a hyperfast power diode manufactured by NXP USA Inc. This component is designed for high-performance applications requiring fast switching and low thermal resistance. It is packaged in a TO-220AC (SOD59) plastic package, which is heatsink mounted and features a single mounting hole. The diode is known for its fast recovery time and low reverse recovery current, making it ideal for various power conversion and switching applications.

Key Specifications

Parameter Value Parameter Value
Voltage - DC Reverse (Vr) (Max) 600 V Voltage - Forward (Vf) (Max) @ If 3.2 V @ 15 A
Current - Average Forward (If) 15 A Reverse Recovery Time (trr) 18 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V Mounting Type Through Hole
Operating Temperature - Junction 175°C (Max) Speed Fast Recovery =< 500ns, > 200mA (Io)

Key Features

  • Extremely fast switching with a reverse recovery time of 18 ns
  • Low reverse recovery current, reducing switching losses in associated MOSFETs
  • Low thermal resistance, enhancing overall system efficiency
  • High voltage rating of 600 V, suitable for high-power applications
  • Through-hole mounting in a TO-220AC package, facilitating easy integration into various designs

Applications

  • Continuous Current Mode (CCM) power supplies
  • Half-bridge and full-bridge switched-mode power supplies
  • Lighting ballasts, particularly in half-bridge configurations
  • Other high-frequency switching applications where fast recovery and low thermal resistance are critical

Q & A

  1. Q: What is the BYC15-600P127 diode used for?

    A: The BYC15-600P127 is a hyperfast power diode used in high-performance applications such as CCM power supplies, half-bridge and full-bridge switched-mode power supplies, and lighting ballasts.

  2. Q: What is the maximum DC reverse voltage rating of the BYC15-600P127?

    A: The maximum DC reverse voltage rating is 600 V.

  3. Q: What is the forward voltage drop at 15 A for the BYC15-600P127?

    A: The forward voltage drop at 15 A is 3.2 V.

  4. Q: What is the reverse recovery time of the BYC15-600P127?

    A: The reverse recovery time is 18 ns.

  5. Q: How is the BYC15-600P127 packaged?

    A: The diode is packaged in a TO-220AC (SOD59) plastic package.

  6. Q: What is the operating junction temperature range for the BYC15-600P127?

    A: The operating junction temperature range is up to 175°C.

  7. Q: Where can I find detailed information about the BYC15-600P127, such as application notes and datasheets?

    A: Detailed information, including datasheets and application notes, can be found on the NXP Semiconductors website or through authorized distributors like Ovaga and Bostock Electronics.

  8. Q: What is the warranty period for the BYC15-600P127?

    A: The warranty period is typically 1 year, covering defects in materials and workmanship under normal use.

  9. Q: How can I ensure the authenticity of the BYC15-600P127 from NXP USA Inc.?

    A: Ensure you purchase from authorized distributors who rigorously test and verify the credentials of original NXP Semiconductors manufacturers and suppliers.

  10. Q: Can I place orders offline for the BYC15-600P127?

    A: Yes, offline orders are accepted through various channels, including direct contact with sales representatives or customer service.

  11. Q: What payment methods are accepted for purchasing the BYC15-600P127?

    A: Various payment methods are accepted, including wire transfer, PayPal, credit cards, Western Union, and Money Gram.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:3.2 V @ 15 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):18 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.47
1,031

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S00X/AA
DD26S2S00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60TX
DD44S32S60TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BYC15-600P127 BYC5-600P127 BYC15-600PQ127 BYC10-600P127 BYC15-600,127
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. WeEn Semiconductors
Product Status Active Active Active Active Active
Diode Type Standard - - Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V - - 600 V 500 V
Current - Average Rectified (Io) - - - 10A 15A
Voltage - Forward (Vf) (Max) @ If 3.2 V @ 15 A - - 1.3 V @ 10 A 2.9 V @ 15 A
Speed Fast Recovery =< 500ns, > 200mA (Io) - - Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 18 ns - - 12 ns 55 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V - - 10 µA @ 600 V 200 µA @ 600 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole - - Through Hole Through Hole
Package / Case TO-220-2 - - TO-220-2 TO-220-2
Supplier Device Package TO-220AC - - TO-220AC TO-220AC
Operating Temperature - Junction 175°C (Max) - - 175°C (Max) 150°C (Max)

Related Product By Categories

BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

PESD5V0S1BSF/S500315
PESD5V0S1BSF/S500315
NXP USA Inc.
TVS DIODE
Z0103MA0,412
Z0103MA0,412
NXP USA Inc.
NOW WEEN - Z0103MA0 - 4 QUADRANT
BC856BT115
BC856BT115
NXP USA Inc.
TRANS PNP 65V 0.1A SC75
BF909A,215
BF909A,215
NXP USA Inc.
MOSFET N-CH SOT-143B
MKE02Z64VLH4
MKE02Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
LPC2468FET208K
LPC2468FET208K
NXP USA Inc.
IC MCU 16/32BIT 512KB 208TFBGA
PCA9554PW,118
PCA9554PW,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16TSSOP
74LVC1G17GV-Q100125
74LVC1G17GV-Q100125
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
74LVC02ADB,112
74LVC02ADB,112
NXP USA Inc.
NOR GATE, LVC/LCX/Z SERIES, 4-FU
MC33664ATL1EGR2
MC33664ATL1EGR2
NXP USA Inc.
TRANSFORMER PHYSICAL LAYER
MMPF0200NPAEP557
MMPF0200NPAEP557
NXP USA Inc.
POWER SUPPLY SUPPORT CIRCUIT AD
MKW36A512VFP4
MKW36A512VFP4
NXP USA Inc.
KINETIS W 32-BIT MCU ARM CORTEX-