2N7002T-13-G
  • Share:

Diodes Incorporated 2N7002T-13-G

Manufacturer No:
2N7002T-13-G
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V SOT523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002T-13-G, produced by Diodes Incorporated, is a high-performance N-channel enhancement mode MOSFET. This device is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. The MOSFET features a low gate threshold voltage, low input capacitance, and fast switching speed, which are crucial for efficient operation in various electronic systems.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage VDSS 60 V VGS = 0V, ID = 10µA
Gate-Source Voltage (Continuous/Pulsed) VGSS ±20 / ±40 V
Continuous Drain Current ID 115 mA TA = +25°C, VGS = 10V
Pulsed Drain Current ID,pulse 800 mA
Gate Threshold Voltage VGS(TH) 1.0 - 2.0 V VDS = VGS, ID = 250µA
On-State Drain-Source Resistance RDS(ON) 7.5 Ω VGS = 5V, ID = 0.05A
Input Capacitance Ciss 22 - 50 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 11 - 25 pF
Reverse Transfer Capacitance Crss 2.0 - 5.0 pF
Turn-On Delay Time tD(ON) 7.0 - 20 ns VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω
Turn-Off Delay Time tD(OFF) 11 - 20 ns

Key Features

  • Low On-Resistance: Minimized on-state resistance (RDS(ON)) for high efficiency.
  • Low Gate Threshold Voltage: Ensures easy switching and low power consumption.
  • Low Input Capacitance: Reduces the impact on high-frequency operations.
  • Fast Switching Speed: Ideal for applications requiring quick response times.
  • Ultra-Small Surface Mount Package: SOT23 package for compact designs.
  • Totally Lead-Free & Fully RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
  • Halogen and Antimony Free: Meets stringent environmental and safety standards.

Applications

  • DC-DC Converters: High efficiency power conversion.
  • Power Management Functions: Ideal for managing power in various electronic systems.
  • Battery Operated Systems: Efficient power management for battery-powered devices.
  • Solid-State Relays: Used in relay and solenoid drivers.
  • Motor Control: Suitable for motor control applications due to its fast switching and low on-resistance.
  • Drivers for Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.: Versatile use in driving various loads.

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the 2N7002T?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the typical on-state resistance (RDS(ON)) at VGS = 5V?

    The typical on-state resistance (RDS(ON)) at VGS = 5V is 7.5Ω.

  3. What is the continuous drain current (ID) at TA = +25°C?

    The continuous drain current (ID) at TA = +25°C is 115mA.

  4. What is the gate threshold voltage (VGS(TH)) range?

    The gate threshold voltage (VGS(TH)) range is 1.0 to 2.0V.

  5. What is the input capacitance (Ciss) range?

    The input capacitance (Ciss) range is 22 to 50pF.

  6. Is the 2N7002T RoHS compliant?

    Yes, the 2N7002T is totally lead-free and fully RoHS compliant.

  7. What is the package type of the 2N7002T?

    The package type is SOT23.

  8. What are some common applications of the 2N7002T?

    Common applications include DC-DC converters, power management functions, battery operated systems, and solid-state relays.

  9. What is the turn-on delay time (tD(ON)) range?

    The turn-on delay time (tD(ON)) range is 7.0 to 20ns.

  10. Is the 2N7002T halogen and antimony free?

    Yes, the 2N7002T is halogen and antimony free.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
59

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HV30/AA
RD15S10HV30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S00X/AA
DD26S2S00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP

Related Product By Categories

CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

1N5711WS-13
1N5711WS-13
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323
BAV99T-7-G
BAV99T-7-G
Diodes Incorporated
DIODE ARRAY GP 85V 75MA SOT523
BAT54TQ-7-F
BAT54TQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT523 T&R 3K
BZT52HC6V8WF-7
BZT52HC6V8WF-7
Diodes Incorporated
DIODE ZENER 6.8V 375MW SOD123F
BZX84C3V0Q-13-F
BZX84C3V0Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZT52HC3V6WF-7
BZT52HC3V6WF-7
Diodes Incorporated
ZENER DIODE SOD123F T&R 3K
BZX84C2V4-7-F-79
BZX84C2V4-7-F-79
Diodes Incorporated
DIODE ZENER
BZX84C3V9-7-G
BZX84C3V9-7-G
Diodes Incorporated
DIODE ZENER
BCV49TA
BCV49TA
Diodes Incorporated
TRANS NPN DARL 60V 0.5A SOT89-3
2N7002W-7-F
2N7002W-7-F
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT323
MMBF170-7-F
MMBF170-7-F
Diodes Incorporated
MOSFET N-CH 60V 500MA SOT23-3
BSS84Q-7-F
BSS84Q-7-F
Diodes Incorporated
BSS FAMILY SOT23 T&R 3K