BSS123W-7-F
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Diodes Incorporated BSS123W-7-F

Manufacturer No:
BSS123W-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123W-7-F is an N-channel surface mount MOSFET manufactured by Diodes Incorporated. This enhancement mode MOSFET is designed for low-voltage general-purpose switching applications. It features a compact SOT-323 (SC-70) package, making it suitable for space-constrained designs. The device operates with a maximum drain-to-source voltage of 100 V and a maximum continuous drain current of 170 mA at 25°C. Its maximum power dissipation is 200 mW, also at 25°C. This MOSFET is widely used in various electronic circuits where efficient switching and amplification are required.

Key Specifications

FET Type N-Channel
Drain-to-Source Voltage (Vdss) 100 V
Drain-Source On Resistance (Max) 6 Ω
Rated Power Dissipation 200 mW
Maximum Continuous Drain Current (at 25°C) 170 mA
Package Style SOT-323 (SC-70)
Mounting Method Surface Mount
Operating Temperature Range -55 °C to 150 °C
Package Dimensions Package Height: 0.95 mm, Package Width: 1.3 mm, Package Length: 2.15 mm

Key Features

  • Enhancement mode N-channel MOSFET
  • Compact SOT-323 (SC-70) package for space-saving designs
  • Maximum drain-to-source voltage of 100 V
  • Maximum continuous drain current of 170 mA at 25°C
  • Maximum power dissipation of 200 mW at 25°C
  • Operating temperature range from -55 °C to 150 °C
  • Surface mount technology for easy integration into PCBs

Applications

The BSS123W-7-F MOSFET is commonly used in low-voltage general-purpose switching applications. It is suitable for a variety of electronic circuits, including but not limited to:

  • Power management and switching circuits
  • Amplifier circuits requiring low power dissipation
  • Automotive and industrial control systems
  • Consumer electronics and appliances
  • Embedded systems and IoT devices

Q & A

  1. What is the maximum drain-to-source voltage of the BSS123W-7-F MOSFET?

    The maximum drain-to-source voltage is 100 V.

  2. What is the maximum continuous drain current of the BSS123W-7-F MOSFET at 25°C?

    The maximum continuous drain current is 170 mA at 25°C.

  3. What is the maximum power dissipation of the BSS123W-7-F MOSFET?

    The maximum power dissipation is 200 mW at 25°C.

  4. What is the package style of the BSS123W-7-F MOSFET?

    The package style is SOT-323 (SC-70).

  5. What is the operating temperature range of the BSS123W-7-F MOSFET?

    The operating temperature range is from -55 °C to 150 °C.

  6. What are the typical applications of the BSS123W-7-F MOSFET?

    It is commonly used in low-voltage general-purpose switching applications, including power management, amplifier circuits, automotive and industrial control systems, consumer electronics, and embedded systems).

  7. How is the BSS123W-7-F MOSFET packaged for delivery?

    The MOSFETs are shipped in tape and reel packaging to facilitate quick mounting and safe delivery).

  8. What is the mounting method for the BSS123W-7-F MOSFET?

    The mounting method is surface mount technology).

  9. What are the package dimensions of the BSS123W-7-F MOSFET?

    The package dimensions are: Package Height: 0.95 mm, Package Width: 1.3 mm, Package Length: 2.15 mm).

  10. Is the BSS123W-7-F MOSFET compliant with any specific regulations?

    The BSS123W-7-F is compliant with EAR99 regulations).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Same Series
BSS123W-7
BSS123W-7
MOSFET N-CH 100V 170MA SOT323

Similar Products

Part Number BSS123W-7-F BSS123WQ-7-F BSS123-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 60 pF @ 25 V 60 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 200mW (Ta) 200mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323 SOT-23-3
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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