BSS123W-7
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Diodes Incorporated BSS123W-7

Manufacturer No:
BSS123W-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT323
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The BSS123W-7-F, produced by Diodes Incorporated, is an N-channel enhancement mode MOSFET designed for high-efficiency power management applications. This component is part of Diodes Incorporated's MOSFET Master Table portfolio, which offers a range of voltage and current ratings suitable for various electronic systems. The BSS123W-7-F is known for its low on-state resistance and superior switching performance, making it an ideal choice for applications requiring efficient power handling.

Key Specifications

ParameterValue
VDS (V)100 V
VGS (±V)20 ±V
IDS @ TA = +25°C (A)0.17 A
PD @ TA = +25°C (W)0.2 W
RDS(ON) Max @ VGS (10V) (mΩ)6000 mΩ
RDS(ON) Max @ VGS (4.5V) (mΩ)10000 mΩ
VGS(TH) Max (V)2 V
CISS Typ (pF)29 @ 25V pF

Key Features

  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • High Drain-Source Voltage Rating

Applications

The BSS123W-7-F is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, and logic level applications. Its high efficiency and fast switching capabilities make it a versatile component for various power management systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSS123W-7-F?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the gate-source voltage threshold (VGS(TH)) of this MOSFET?
    The gate-source voltage threshold (VGS(TH)) is 2 V.
  3. What are the typical applications for the BSS123W-7-F?
    Typical applications include small servo motor control, power MOSFET gate drivers, and logic level applications.
  4. What is the maximum on-state resistance (RDS(ON)) at VGS = 10V?
    The maximum on-state resistance (RDS(ON)) at VGS = 10V is 6000 mΩ.
  5. What is the input capacitance (CISS) of the BSS123W-7-F?
    The input capacitance (CISS) is 29 pF at 25V.
  6. Is the BSS123W-7-F AEC qualified?
    Yes, the BSS123W-7-F is AEC qualified.
  7. What is the maximum continuous drain current (IDS) at TA = +25°C?
    The maximum continuous drain current (IDS) at TA = +25°C is 0.17 A.
  8. What is the maximum power dissipation (PD) at TA = +25°C?
    The maximum power dissipation (PD) at TA = +25°C is 0.2 W.
  9. Does the BSS123W-7-F have ESD diodes?
    No, the BSS123W-7-F does not have ESD diodes.
  10. What are the key features of the BSS123W-7-F?
    The key features include low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, and high drain-source voltage rating.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Same Series
BSS123W-7
BSS123W-7
MOSFET N-CH 100V 170MA SOT323

Similar Products

Part Number BSS123W-7 BSS123-7 BSS123K-7 BSS123Q-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta) 230mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - 1.3 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 60 pF @ 25 V 38 pF @ 50 V 60 pF @ 25 V
FET Feature - - Standard -
Power Dissipation (Max) 200mW (Ta) 300mW (Ta) 500mW 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-23-3 SOT-23-3 SOT-23-3
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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