BSS123Q-7
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Diodes Incorporated BSS123Q-7

Manufacturer No:
BSS123Q-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
2N7002 FAMILY SOT23 T&R 3K
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The BSS123Q-7 is an N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to meet the stringent requirements of automotive applications and is qualified to AEC-Q101, supported by a Production Part Approval Process (PPAP), and manufactured in IATF 16949 certified facilities. It features a low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage, making it suitable for a variety of applications.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage VDSS 100 V VGS = 0V, ID = 250μA
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current Continuous ID 0.17 A VGS = 10V
Drain Current Pulsed IDM 0.68 A
Power Dissipation PD 300 mW
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Package SOT23
Case Material Molded Plastic UL Flammability Classification Rating 94V-0

Key Features

  • Low Gate Threshold Voltage: Ensures easy switching and control.
  • Low Input Capacitance: Reduces the load on the gate driver.
  • Fast Switching Speed: Ideal for high-frequency applications.
  • Low Input/Output Leakage: Minimizes power loss and improves efficiency.
  • High Drain-Source Voltage Rating: Supports high-voltage applications.
  • Totally Lead-Free & Fully RoHS Compliant: Meets environmental regulations.
  • Halogen and Antimony Free: A “Green” device, environmentally friendly.

Applications

  • Small Servo Motor Control: Suitable for controlling small servo motors due to its fast switching and low leakage characteristics.
  • Power MOSFET Gate Drivers: Ideal for driving power MOSFETs in various applications.
  • Switching Applications: Used in switching circuits where fast switching speed and low input capacitance are crucial.

Q & A

  1. What is the drain-source voltage rating of the BSS123Q-7?

    The drain-source voltage rating is 100V.

  2. What is the continuous drain current of the BSS123Q-7 at VGS = 10V?

    The continuous drain current is 0.17A.

  3. What is the thermal resistance, junction to ambient, of the BSS123Q-7?

    The thermal resistance, junction to ambient, is 417°C/W.

  4. What are the operating and storage temperature ranges for the BSS123Q-7?

    The operating and storage temperature ranges are -55 to +150°C.

  5. Is the BSS123Q-7 RoHS compliant?

    Yes, the BSS123Q-7 is fully RoHS compliant and lead-free.

  6. What package type is the BSS123Q-7 available in?

    The BSS123Q-7 is available in the SOT23 package.

  7. What are some typical applications of the BSS123Q-7?

    Typical applications include small servo motor control, power MOSFET gate drivers, and switching applications.

  8. What is the gate-source voltage continuous rating of the BSS123Q-7?

    The gate-source voltage continuous rating is ±20V.

  9. Is the BSS123Q-7 qualified for automotive applications?

    Yes, it is qualified to AEC-Q101 and supported by a PPAP.

  10. What is the power dissipation of the BSS123Q-7?

    The power dissipation is 300mW.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS123Q-7 BSS123W-7 BSS123-7 BSS123K-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Discontinued at Digi-Key Discontinued at Digi-Key Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta) 170mA (Ta) 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - - 1.3 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 60 pF @ 25 V 60 pF @ 25 V 38 pF @ 50 V
FET Feature - - - Standard
Power Dissipation (Max) 300mW (Ta) 200mW (Ta) 300mW (Ta) 500mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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