BSS123K-7
  • Share:

Diodes Incorporated BSS123K-7

Manufacturer No:
BSS123K-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 230MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123-7-F, produced by Diodes Incorporated, is an N-Channel enhancement mode field effect transistor (FET). This device is fabricated using Diodes Incorporated’s proprietary high-density and advanced trench technology. It is designed to minimize on-state resistance, providing rugged, reliable, and fast switching performance. The BSS123-7-F is particularly suited for low voltage, low current applications.

Key Specifications

Characteristic Symbol Min Typ Max Unit Test Condition
Drain-Source Breakdown Voltage BVDSS 100 V VGS = 0V, ID = 250μA
Gate Threshold Voltage VGS(TH) 0.8 1.4 2.0 V VDS = VGS, ID = 1mA
Static Drain-Source On-Resistance RDS(ON) 3.2 6.0 Ω VGS = 10V, ID = 0.17A
Input Capacitance Ciss 22 60 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Turn-On Delay Time tD(ON) 8 ns VGS = 10V, VDD = 30V, ID = 0.28A, RGEN = 50Ω
Operating Temperature Range -55 150 °C
Maximum Power Dissipation 300 mW

Key Features

  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • High Drain-Source Voltage Rating
  • Totally Lead-Free & Fully RoHS Compliant
  • Rugged and Reliable
  • Compact Industry Standard SOT-23 Surface Mount Package

Applications

  • Small Servo Motor Control
  • Power MOSFET Gate Drivers
  • Switching Applications

Q & A

  1. What is the drain-source breakdown voltage of the BSS123-7-F?

    The drain-source breakdown voltage (BVDSS) is 100V at VGS = 0V and ID = 250μA.

  2. What is the gate threshold voltage range for the BSS123-7-F?

    The gate threshold voltage (VGS(TH)) ranges from 0.8V to 2.0V at VDS = VGS and ID = 1mA.

  3. What is the static drain-source on-resistance of the BSS123-7-F?

    The static drain-source on-resistance (RDS(ON)) is typically 3.2Ω to 6.0Ω at VGS = 10V and ID = 0.17A.

  4. What is the input capacitance of the BSS123-7-F?

    The input capacitance (Ciss) is typically 22pF to 60pF at VDS = 25V, VGS = 0V, and f = 1.0MHz.

  5. What is the turn-on delay time for the BSS123-7-F?

    The turn-on delay time (tD(ON)) is up to 8ns at VGS = 10V, VDD = 30V, ID = 0.28A, and RGEN = 50Ω.

  6. What is the operating temperature range of the BSS123-7-F?

    The operating temperature range is from -55°C to 150°C.

  7. What is the maximum power dissipation of the BSS123-7-F?

    The maximum power dissipation is 300mW.

  8. Is the BSS123-7-F RoHS compliant?

    Yes, the BSS123-7-F is totally lead-free and fully RoHS compliant).

  9. What package type does the BSS123-7-F come in?

    The BSS123-7-F comes in a compact industry standard SOT-23 surface mount package).

  10. What are some common applications for the BSS123-7-F?

    Common applications include small servo motor control, power MOSFET gate drivers, and other switching applications).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:1.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:38 pF @ 50 V
FET Feature:Standard
Power Dissipation (Max):500mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.16
5,013

Please send RFQ , we will respond immediately.

Same Series
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV3S/AA
DD15S20WV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
RD50S1S50V50
RD50S1S50V50
CONN D-SUB RCPT 50POS CRIMP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60TX
DD44S32S60TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BSS123K-7 BSS123Q-7 BSS123W-7 BSS123-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta) 170mA (Ta) 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.3 nC @ 10 V - - -
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 38 pF @ 50 V 60 pF @ 25 V 60 pF @ 25 V 60 pF @ 25 V
FET Feature Standard - - -
Power Dissipation (Max) 500mW 300mW (Ta) 200mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-323 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK

Related Product By Brand

BAS40T-7-F
BAS40T-7-F
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT523
BAV21HWF-7
BAV21HWF-7
Diodes Incorporated
DIODE GP 200V 200MA SOD123F
BZX84C24S-7-F
BZX84C24S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 24V SOT363
BZX84C3V9Q-7-F
BZX84C3V9Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZX84C4V3W-7
BZX84C4V3W-7
Diodes Incorporated
DIODE ZENER 4.3V 200MW SOT323
BZX84C22W-7
BZX84C22W-7
Diodes Incorporated
DIODE ZENER 22V 200MW SOT323
BZX84C5V1-7-F-79
BZX84C5V1-7-F-79
Diodes Incorporated
DIODE ZENER 5.1V 300MW SOT23
BZX84C18-7-F-31
BZX84C18-7-F-31
Diodes Incorporated
DIODE ZENER 18V 300MW SOT23
BC857AW-7-F
BC857AW-7-F
Diodes Incorporated
TRANS PNP 45V 0.1A SOT323
BCX5410TA
BCX5410TA
Diodes Incorporated
TRANS NPN 45V 1A SOT89-3
BSS123TC
BSS123TC
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3
74LVC1G08FW4-7
74LVC1G08FW4-7
Diodes Incorporated
IC GATE AND 1CH 2-INP DFN1010-6