BSS123K-7
  • Share:

Diodes Incorporated BSS123K-7

Manufacturer No:
BSS123K-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 230MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123-7-F, produced by Diodes Incorporated, is an N-Channel enhancement mode field effect transistor (FET). This device is fabricated using Diodes Incorporated’s proprietary high-density and advanced trench technology. It is designed to minimize on-state resistance, providing rugged, reliable, and fast switching performance. The BSS123-7-F is particularly suited for low voltage, low current applications.

Key Specifications

Characteristic Symbol Min Typ Max Unit Test Condition
Drain-Source Breakdown Voltage BVDSS 100 V VGS = 0V, ID = 250μA
Gate Threshold Voltage VGS(TH) 0.8 1.4 2.0 V VDS = VGS, ID = 1mA
Static Drain-Source On-Resistance RDS(ON) 3.2 6.0 Ω VGS = 10V, ID = 0.17A
Input Capacitance Ciss 22 60 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Turn-On Delay Time tD(ON) 8 ns VGS = 10V, VDD = 30V, ID = 0.28A, RGEN = 50Ω
Operating Temperature Range -55 150 °C
Maximum Power Dissipation 300 mW

Key Features

  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • High Drain-Source Voltage Rating
  • Totally Lead-Free & Fully RoHS Compliant
  • Rugged and Reliable
  • Compact Industry Standard SOT-23 Surface Mount Package

Applications

  • Small Servo Motor Control
  • Power MOSFET Gate Drivers
  • Switching Applications

Q & A

  1. What is the drain-source breakdown voltage of the BSS123-7-F?

    The drain-source breakdown voltage (BVDSS) is 100V at VGS = 0V and ID = 250μA.

  2. What is the gate threshold voltage range for the BSS123-7-F?

    The gate threshold voltage (VGS(TH)) ranges from 0.8V to 2.0V at VDS = VGS and ID = 1mA.

  3. What is the static drain-source on-resistance of the BSS123-7-F?

    The static drain-source on-resistance (RDS(ON)) is typically 3.2Ω to 6.0Ω at VGS = 10V and ID = 0.17A.

  4. What is the input capacitance of the BSS123-7-F?

    The input capacitance (Ciss) is typically 22pF to 60pF at VDS = 25V, VGS = 0V, and f = 1.0MHz.

  5. What is the turn-on delay time for the BSS123-7-F?

    The turn-on delay time (tD(ON)) is up to 8ns at VGS = 10V, VDD = 30V, ID = 0.28A, and RGEN = 50Ω.

  6. What is the operating temperature range of the BSS123-7-F?

    The operating temperature range is from -55°C to 150°C.

  7. What is the maximum power dissipation of the BSS123-7-F?

    The maximum power dissipation is 300mW.

  8. Is the BSS123-7-F RoHS compliant?

    Yes, the BSS123-7-F is totally lead-free and fully RoHS compliant).

  9. What package type does the BSS123-7-F come in?

    The BSS123-7-F comes in a compact industry standard SOT-23 surface mount package).

  10. What are some common applications for the BSS123-7-F?

    Common applications include small servo motor control, power MOSFET gate drivers, and other switching applications).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:1.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:38 pF @ 50 V
FET Feature:Standard
Power Dissipation (Max):500mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.16
5,013

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV50
DD15S2S5WV50
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BSS123K-7 BSS123Q-7 BSS123W-7 BSS123-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta) 170mA (Ta) 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.3 nC @ 10 V - - -
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 38 pF @ 50 V 60 pF @ 25 V 60 pF @ 25 V 60 pF @ 25 V
FET Feature Standard - - -
Power Dissipation (Max) 500mW 300mW (Ta) 200mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-323 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

BAT54CTA
BAT54CTA
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT23-3
BAS40-05-7
BAS40-05-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT23-3
BAS40BRW-7
BAS40BRW-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT363
BAW56W-7-G
BAW56W-7-G
Diodes Incorporated
DIODE GEN PURPOSE
BAS16LPQ-7
BAS16LPQ-7
Diodes Incorporated
FAST SWITCHING DIODE X1-DFN1006-
BZX84C39TS-7-F
BZX84C39TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 39V SOT363
BZT52HC3V6WF-7
BZT52HC3V6WF-7
Diodes Incorporated
ZENER DIODE SOD123F T&R 3K
BCP5616QTA
BCP5616QTA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BC848B-7-F
BC848B-7-F
Diodes Incorporated
TRANS NPN 30V 0.1A SOT23-3
BSS138DW-7
BSS138DW-7
Diodes Incorporated
MOSFET 2N-CH 50V 0.2A SC70-6
BSS123TC
BSS123TC
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3
74LVC1G08QSE-7
74LVC1G08QSE-7
Diodes Incorporated
IC GATE AND 1CH 2-INP SOT353