Overview
The BSS123-7-F is an N-Channel Enhancement Mode Field Effect Transistor (MOSFET) produced by Diodes Incorporated. This device is designed using Diodes Incorporated’s proprietary, high-density, and advanced trench technology. It is particularly suited for low voltage, low current applications due to its low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. The BSS123-7-F is packaged in a SOT-23-3 package and is fully RoHS compliant, making it suitable for a wide range of modern electronic designs.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | - | - | 100 | V | VGS = 0 V, ID = 250 μA |
| Gate-Source Voltage | VGSS | - | - | ±20 | V | - |
| Continuous Drain Current | ID | - | - | 0.17 | A | TA = 25°C |
| Pulsed Drain Current | ID | - | - | 0.68 | A | - |
| Maximum Power Dissipation | PD | - | - | 300 mW | - | - |
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.4 | 2.0 | V | VDS = VGS, ID = 1 mA |
| Static Drain-Source On-Resistance | RDS(on) | - | 3.2 | 6.0 | Ω | VGS = 10 V, ID = 0.17 A |
| Input Capacitance | Ciss | - | 22 | 60 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz |
| Operating Temperature Range | TJ | -55 | - | 150 | °C | - |
Key Features
- Low Gate Threshold Voltage: The BSS123-7-F has a low gate threshold voltage, making it suitable for low voltage applications.
- Low Input Capacitance: This MOSFET features low input capacitance, which is beneficial for high-frequency switching applications.
- Fast Switching Speed: It offers fast switching speed, enhancing the performance in switching applications.
- Low Input/Output Leakage: The device has low input/output leakage, reducing power consumption and improving overall efficiency.
- High Drain-Source Voltage Rating: With a drain-source voltage rating of 100V, it provides robust performance in various applications.
- Totally Lead-Free & Fully RoHS Compliant: The BSS123-7-F is fully compliant with RoHS directives, making it environmentally friendly and suitable for modern electronic designs.
Applications
- Small Servo Motor Control: The BSS123-7-F is suitable for controlling small servo motors due to its low voltage and current capabilities.
- Power MOSFET Gate Drivers: It can be used as a driver for other power MOSFETs, leveraging its fast switching and low on-state resistance.
- Switching Applications: The device is ideal for various switching applications, including power management and signal processing.
Q & A
- What is the maximum drain-source voltage of the BSS123-7-F?
The maximum drain-source voltage (VDSS) is 100V.
- What is the continuous drain current rating of the BSS123-7-F?
The continuous drain current (ID) is 0.17A.
- What is the gate threshold voltage range of the BSS123-7-F?
The gate threshold voltage (VGS(th)) ranges from 0.8V to 2.0V.
- What is the maximum power dissipation of the BSS123-7-F?
The maximum power dissipation (PD) is 300 mW.
- Is the BSS123-7-F RoHS compliant?
Yes, the BSS123-7-F is fully RoHS compliant and lead-free.
- What is the operating temperature range of the BSS123-7-F?
The operating temperature range is from -55°C to 150°C.
- What package type is the BSS123-7-F available in?
The BSS123-7-F is available in a SOT-23-3 package..
- What are some typical applications of the BSS123-7-F?
Typical applications include small servo motor control, power MOSFET gate drivers, and various switching applications.
- What is the input capacitance of the BSS123-7-F?
The input capacitance (Ciss) is typically 22 pF to 60 pF at VDS = 25 V, VGS = 0 V, and f = 1.0 MHz..
- What is the static drain-source on-resistance of the BSS123-7-F?
The static drain-source on-resistance (RDS(on)) is typically 3.2 Ω to 6.0 Ω at VGS = 10 V, ID = 0.17 A..
