Overview
The BSS123-G, produced by onsemi, is an N-Channel logic level enhancement mode field effect transistor. This device is manufactured using onsemi’s proprietary high cell density DMOS technology, which minimizes on-state resistance while providing rugged, reliable, and fast switching performance. It is particularly suited for low-voltage, low-current applications and is widely used in various industrial and consumer electronics.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 100 | V |
| Gate-Source Voltage (VGSS) | ±20 | V |
| Continuous Drain Current (ID) | 0.17 | A |
| Pulsed Drain Current (ID) | 0.68 | A |
| Maximum Power Dissipation (PD) | 0.36 | W |
| On-State Resistance (RDS(ON)) at VGS = 10 V | 6 Ω | Ω |
| On-State Resistance (RDS(ON)) at VGS = 4.5 V | 10 Ω | Ω |
| Input Capacitance (Ciss) | 73 pF | pF |
| Output Capacitance (Coss) | 7 pF | pF |
| Reverse Transfer Capacitance (Crss) | 3.4 pF | pF |
Key Features
- High Density Cell Design for Extremely Low RDS(ON)
- Rugged and Reliable
- Compact Industry Standard SOT-23 Surface Mount Package
- Pb-Free and Halogen-Free
- Fast Switching Speed
- Very Low Capacitance
Applications
- Small Servo Motor Control
- Power MOSFET Gate Drivers
- Logic Level Transistor Applications
- High Speed Line Drivers
- Power Management/Power Supply Applications
- Other Switching Applications
Q & A
- What is the maximum drain-source voltage of the BSS123-G?
The maximum drain-source voltage (VDSS) is 100 V.
- What is the continuous drain current rating of the BSS123-G?
The continuous drain current (ID) is 0.17 A.
- What is the on-state resistance of the BSS123-G at VGS = 10 V?
The on-state resistance (RDS(ON)) at VGS = 10 V is 6 Ω.
- What type of package does the BSS123-G come in?
The BSS123-G comes in a compact industry standard SOT-23 surface mount package.
- Is the BSS123-G Pb-Free and Halogen-Free?
Yes, the BSS123-G is Pb-Free and Halogen-Free.
- What are some common applications of the BSS123-G?
Common applications include small servo motor control, power MOSFET gate drivers, logic level transistor applications, high speed line drivers, and power management/power supply applications.
- What is the maximum gate-source voltage of the BSS123-G?
The maximum gate-source voltage (VGSS) is ±20 V.
- What is the maximum power dissipation of the BSS123-G?
The maximum power dissipation (PD) is 0.36 W.
- What is the input capacitance of the BSS123-G?
The input capacitance (Ciss) is 73 pF.
- Is the BSS123-G suitable for high-speed switching applications?
Yes, the BSS123-G is designed for fast switching performance, making it suitable for high-speed switching applications.
