Overview
The BAV23SQ-13-F is a surface mount high voltage dual switching diode manufactured by Diodes Incorporated. This component is designed for high-speed signal routing and is particularly suited for applications requiring low leakage current and fast switching speeds. The diode is packaged in a SOT23 case, making it ideal for space-constrained and battery-powered portable devices. It is also fully compliant with automotive standards, including AEC-Q101 qualification and PPAP capability, ensuring high reliability and performance in demanding environments.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 250 | V |
| Working Peak Reverse Voltage | VRWM | 200 | V |
| RMS Reverse Voltage | VR(RMS) | 141 | V |
| Forward Continuous Current | IFM | 400 | mA |
| Non-Repetitive Peak Forward Surge Current | IFSM | 9.0 A (t = 1.0µs), 3.0 A (t = 100µs), 1.7 A (t = 10ms) | A |
| Repetitive Peak Forward Surge Current | IFRM | 625 | mA |
| Power Dissipation | PD | 350 | mW |
| Thermal Resistance Junction to Ambient Air | RθJA | 357 | °C/W |
| Operating and Storage Temperature Range | TJ, TSTG | -65 to +150 | °C |
| Reverse Breakdown Voltage | V(BR)R | 250 | V |
| Forward Voltage | VF | 0.715 V (IF = 1.0 mA), 0.855 V (IF = 10 mA) | V |
| Reverse Current | IR | 100 nA (VR = 200 V, TJ = +25°C), 100 µA (VR = 200 V, TJ = +150°C) | nA/µA |
| Total Capacitance | CT | 5 pF (VR = 0, f = 1.0 MHz) | pF |
| Reverse Recovery Time | tRR | 50 ns | ns |
Key Features
- Fast Switching Speed: Ideal for high-speed signal routing applications.
- High Reverse Breakdown Voltage: Up to 250 V, ensuring robust performance under high voltage conditions.
- Low Leakage Current: Minimizes power consumption and heat generation.
- Totally Lead-Free & Fully RoHS Compliant: Compliant with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3).
- Halogen and Antimony Free: Classified as a “Green” device, containing less than 900 ppm bromine and chlorine.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive applications requiring high reliability and specific change control.
- Ideal for Battery-Powered, Portable Applications: Compact SOT23 package and low power consumption make it suitable for portable devices.
Applications
- Automotive Systems: Qualified to AEC-Q101 standards, making it suitable for various automotive applications.
- Battery-Powered Devices: Ideal for portable electronics due to its low leakage current and compact package.
- High-Speed Signal Routing: Used in applications requiring fast switching speeds and low power consumption.
- Consumer Electronics: Suitable for use in a variety of consumer electronic devices where high reliability and low power consumption are critical.
Q & A
- What is the repetitive peak reverse voltage of the BAV23SQ-13-F diode?
The repetitive peak reverse voltage (VRRM) is 250 V.
- What is the forward continuous current rating of the BAV23SQ-13-F?
The forward continuous current (IFM) is 400 mA.
- Is the BAV23SQ-13-F diode RoHS compliant?
- What is the thermal resistance junction to ambient air for the BAV23SQ-13-F?
The thermal resistance junction to ambient air (RθJA) is 357 °C/W.
- What are the operating and storage temperature ranges for the BAV23SQ-13-F?
The operating and storage temperature range is -65 to +150 °C.
- Is the BAV23SQ-13-F suitable for automotive applications?
- What is the reverse recovery time of the BAV23SQ-13-F diode?
The reverse recovery time (tRR) is 50 ns.
- What is the total capacitance of the BAV23SQ-13-F at 0 V and 1 MHz?
The total capacitance (CT) is 5 pF at VR = 0 V and f = 1.0 MHz.
- What is the forward voltage drop of the BAV23SQ-13-F at different current levels?
The forward voltage drop (VF) is 0.715 V at IF = 1.0 mA and 0.855 V at IF = 10 mA.
- Is the BAV23SQ-13-F diode halogen and antimony free?
