BSS123-7-F
  • Share:

Diodes Incorporated BSS123-7-F

Manufacturer No:
BSS123-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123-7-F is a N-channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device utilizes advanced trench technology and is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It features a matte tin finish over an alloy 42 lead frame and is housed in a UL94V-0 flame-rated moulded plastic case. The MOSFET is suitable for low voltage and current applications and is AEC-Q101 qualified, making it a reliable choice for automotive and industrial use.

Key Specifications

Parameter Value
Channel Type N Channel
Drain Source Voltage (Vds) 100 V
Continuous Drain Current (Id) 170 mA
Drain Source On State Resistance (Rds(on)) 6 Ω (at 10 V)
Gate Source Threshold Voltage (Vgs(th)) ±20 V (Max: 1.4 V)
Power Dissipation 300 mW
No. of Pins 3 Pins
Transistor Case Style SOT-23
Transistor Mounting Surface Mount
Operating Temperature Range -55 °C to 150 °C

Key Features

  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • High drain-source voltage rating
  • AEC-Q101 Qualified for automotive applications
  • Level-1 per J-STD-020 moisture sensitivity
  • Green product

Applications

  • Power Management
  • Motor Drive & Control
  • Small servo motor control
  • Power MOSFET gate drivers
  • Switching applications

Q & A

  1. What is the channel type of the BSS123-7-F MOSFET?

    The BSS123-7-F is an N-channel MOSFET.

  2. What is the maximum drain-source voltage of the BSS123-7-F?

    The maximum drain-source voltage is 100 V.

  3. What is the continuous drain current of the BSS123-7-F?

    The continuous drain current is 170 mA.

  4. What is the on-state resistance of the BSS123-7-F?

    The on-state resistance is 6 Ω at 10 V.

  5. What is the operating temperature range of the BSS123-7-F?

    The operating temperature range is -55 °C to 150 °C.

  6. Is the BSS123-7-F AEC-Q101 qualified?

    Yes, the BSS123-7-F is AEC-Q101 qualified.

  7. What is the package style of the BSS123-7-F?

    The package style is SOT-23.

  8. What are some typical applications of the BSS123-7-F?

    Typical applications include power management, motor drive & control, small servo motor control, and switching applications.

  9. What is the power dissipation of the BSS123-7-F?

    The power dissipation is 300 mW.

  10. Is the BSS123-7-F RoHS compliant?

    Yes, the BSS123-7-F is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.28
131

Please send RFQ , we will respond immediately.

Same Series
BSS123-7
BSS123-7
MOSFET N-CH 100V 170MA SOT23-3

Similar Products

Part Number BSS123-7-F BSS123W-7-F
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 60 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300mW (Ta) 200mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323

Related Product By Categories

PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

1N5711WS-7
1N5711WS-7
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323
BAW56T-7-G
BAW56T-7-G
Diodes Incorporated
DIODE GEN PURPOSE
BZX84C30S-7-F
BZX84C30S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 30V SOT363
BZX84C3V6-7-F
BZX84C3V6-7-F
Diodes Incorporated
DIODE ZENER 3.6V 300MW SOT23-3
BZX84C22Q-13-F
BZX84C22Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84B5V6-7-F-79
BZX84B5V6-7-F-79
Diodes Incorporated
DIODE ZENER
BC807-40Q-7-F
BC807-40Q-7-F
Diodes Incorporated
TRANS PNP 45V 0.5A SOT23-3
BCX5610TA
BCX5610TA
Diodes Incorporated
TRANS NPN 80V 1A SOT89-3
2N7002EQ-13-F
2N7002EQ-13-F
Diodes Incorporated
2N7002 FAMILY SOT23 T&R 10K
BSS138WQ-7-F
BSS138WQ-7-F
Diodes Incorporated
BSS FAMILY SOT323 T&R 3K
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23
74HC04T14-13
74HC04T14-13
Diodes Incorporated
IC INVERTER 6CH 1-INP 14TSSOP