BSS123-7-F
  • Share:

Diodes Incorporated BSS123-7-F

Manufacturer No:
BSS123-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123-7-F is a N-channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device utilizes advanced trench technology and is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It features a matte tin finish over an alloy 42 lead frame and is housed in a UL94V-0 flame-rated moulded plastic case. The MOSFET is suitable for low voltage and current applications and is AEC-Q101 qualified, making it a reliable choice for automotive and industrial use.

Key Specifications

Parameter Value
Channel Type N Channel
Drain Source Voltage (Vds) 100 V
Continuous Drain Current (Id) 170 mA
Drain Source On State Resistance (Rds(on)) 6 Ω (at 10 V)
Gate Source Threshold Voltage (Vgs(th)) ±20 V (Max: 1.4 V)
Power Dissipation 300 mW
No. of Pins 3 Pins
Transistor Case Style SOT-23
Transistor Mounting Surface Mount
Operating Temperature Range -55 °C to 150 °C

Key Features

  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • High drain-source voltage rating
  • AEC-Q101 Qualified for automotive applications
  • Level-1 per J-STD-020 moisture sensitivity
  • Green product

Applications

  • Power Management
  • Motor Drive & Control
  • Small servo motor control
  • Power MOSFET gate drivers
  • Switching applications

Q & A

  1. What is the channel type of the BSS123-7-F MOSFET?

    The BSS123-7-F is an N-channel MOSFET.

  2. What is the maximum drain-source voltage of the BSS123-7-F?

    The maximum drain-source voltage is 100 V.

  3. What is the continuous drain current of the BSS123-7-F?

    The continuous drain current is 170 mA.

  4. What is the on-state resistance of the BSS123-7-F?

    The on-state resistance is 6 Ω at 10 V.

  5. What is the operating temperature range of the BSS123-7-F?

    The operating temperature range is -55 °C to 150 °C.

  6. Is the BSS123-7-F AEC-Q101 qualified?

    Yes, the BSS123-7-F is AEC-Q101 qualified.

  7. What is the package style of the BSS123-7-F?

    The package style is SOT-23.

  8. What are some typical applications of the BSS123-7-F?

    Typical applications include power management, motor drive & control, small servo motor control, and switching applications.

  9. What is the power dissipation of the BSS123-7-F?

    The power dissipation is 300 mW.

  10. Is the BSS123-7-F RoHS compliant?

    Yes, the BSS123-7-F is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.28
131

Please send RFQ , we will respond immediately.

Same Series
BSS123-7
BSS123-7
MOSFET N-CH 100V 170MA SOT23-3

Similar Products

Part Number BSS123-7-F BSS123W-7-F
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 60 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300mW (Ta) 200mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK

Related Product By Brand

BAS70-04-7-F
BAS70-04-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT23-3
MBR10100CDTR-G1
MBR10100CDTR-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO252
BAS40T-7-F
BAS40T-7-F
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT523
BZX84C5V6S-7-F
BZX84C5V6S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 5.6V SOT363
BZX84C27-7-F
BZX84C27-7-F
Diodes Incorporated
DIODE ZENER 27V 300MW SOT23-3
BZX84C3V9Q-7-F
BZX84C3V9Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZX84B4V3Q-7-F
BZX84B4V3Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BSS84DWQ-13
BSS84DWQ-13
Diodes Incorporated
BSS FAMILY SOT363 T&R 10K
BSS123-7-F
BSS123-7-F
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3
DMG2305UX-13
DMG2305UX-13
Diodes Incorporated
MOSFET P-CH 20V 4.2A SOT23
MMBF170-7-F
MMBF170-7-F
Diodes Incorporated
MOSFET N-CH 60V 500MA SOT23-3
ULN2002AD16-U
ULN2002AD16-U
Diodes Incorporated
IC PWR RELAY 7NPN 1:1 16DIP