BSC014N06NSATMA1
  • Share:

Infineon Technologies BSC014N06NSATMA1

Manufacturer No:
BSC014N06NSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 30A/100A TDSON7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC014N06NSATMA1, produced by Infineon Technologies, is a high-performance N-channel MOSFET belonging to the OptiMOS™ 5 family. This component is specifically optimized for synchronous rectification in switched mode power supplies (SMPS), making it an ideal choice for various industrial and consumer applications. It is designed to enhance system efficiency, reduce the need for paralleling, increase power density, and lower system costs. The MOSFET is also suitable for use in life-support devices, automotive, aviation, and aerospace applications, subject to express written approval from Infineon Technologies.

Key Specifications

Parameter Value Unit Note/Test Condition
VDS (Drain-Source Voltage) 60 V
RDS(on) (On-State Resistance) 1.45 mΩ
ID (Continuous Drain Current) 257 A VGS = 10 V, TJ = 25°C
ID (Continuous Drain Current at TJ = 100°C) 182 A VGS = 10 V, TJ = 100°C
Qg (Total Gate Charge) 100 nC
Qg (Total Gate Charge from 0V to 10V) 89 nC
TJ (Junction Temperature) 175 °C
Package PG-TDSON-8

Key Features

  • Optimized for high-performance synchronous rectification in SMPS applications.
  • 40% lower RDS(on) compared to alternative devices.
  • 40% improvement in Figure of Merit (FOM) over similar devices.
  • RoHS compliant and halogen-free according to IEC61249-2-21.
  • MSL1 rated.
  • 100% avalanche tested).
  • Superior thermal resistance).
  • Higher solder joint reliability due to enlarged source interconnection).

Applications

  • Synchronous rectification in switched mode power supplies (SMPS).
  • Solar micro inverters.
  • Isolated DC-DC converters).
  • Motor control for 12-48V systems).
  • Or-ing switches).

Q & A

  1. What is the maximum drain-source voltage of the BSC014N06NSATMA1 MOSFET?

    The maximum drain-source voltage is 60 V).

  2. What is the on-state resistance (RDS(on)) of this MOSFET?

    The on-state resistance is 1.45 mΩ).

  3. What is the continuous drain current rating at 25°C and 100°C?

    The continuous drain current is 257 A at 25°C and 182 A at 100°C).

  4. Is the BSC014N06NSATMA1 RoHS compliant?

    Yes, it is RoHS compliant and halogen-free).

  5. What are the key applications of this MOSFET?

    Key applications include synchronous rectification in SMPS, solar micro inverters, isolated DC-DC converters, motor control, and or-ing switches).

  6. What is the junction temperature rating of this MOSFET?

    The junction temperature rating is 175°C).

  7. Is the BSC014N06NSATMA1 suitable for use in life-support devices?

    Yes, but only with express written approval from Infineon Technologies).

  8. What package type does the BSC014N06NSATMA1 come in?

    The package type is PG-TDSON-8).

  9. Does the BSC014N06NSATMA1 have any special thermal features?

    Yes, it has superior thermal resistance and higher solder joint reliability).

  10. Is the BSC014N06NSATMA1 100% avalanche tested?

    Yes, it is 100% avalanche tested).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.45mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.8V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:89 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-17
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$4.09
215

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC014N06NSATMA1 BSC034N06NSATMA1 BSC016N06NSATMA1 BSC019N06NSATMA1 BSC014N06NSTATMA1 BSC012N06NSATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc) 100A (Tc) 30A (Ta), 100A (Tc) 100A (Ta) 100A (Tc) 36A (Ta), 306A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.45mOhm @ 50A, 10V 3.4mOhm @ 50A, 10V 1.6mOhm @ 50A, 10V 1.95mOhm @ 50A, 10V 1.45mOhm @ 50A, 10V 1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.8V @ 120µA 3.3V @ 41µA 2.8V @ 95µA 3.3V @ 74µA 3.3V @ 120µA 3.3V @ 147µA
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V 41 nC @ 10 V 71 nC @ 10 V 77 nC @ 10 V 104 nC @ 10 V 143 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 30 V 3000 pF @ 30 V 5200 pF @ 30 V 5250 pF @ 30 V 8125 pF @ 30 V 11000 pF @ 30 V
FET Feature - - - - - -
Power Dissipation (Max) 2.5W (Ta), 156W (Tc) 2.5W (Ta), 74W (Tc) 2.5W (Ta), 139W (Tc) 136W (Ta) 3W (Ta), 188W (Tc) 214W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-17 PG-TDSON-8-7 PG-TDSON-8 FL PG-TDSON-8 FL PG-TDSON-8 FL PG-TSON-8-3
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK

Related Product By Brand

BAV199E6433HTMA1
BAV199E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAS7006B5003
BAS7006B5003
Infineon Technologies
SCHOTTKY DIODE
BAS70-05B5003
BAS70-05B5003
Infineon Technologies
SCHOTTKY DIODE
BAS70-04E6327
BAS70-04E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BAV 70W E6433
BAV 70W E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAV 99 B5003
BAV 99 B5003
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAS40-06B5000
BAS40-06B5000
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BCX 55-16 E6327
BCX 55-16 E6327
Infineon Technologies
TRANS NPN 60V 1A SOT-89
BSC0702LSATMA1
BSC0702LSATMA1
Infineon Technologies
MOSFET N-CH 60V 100A SUPERSO8
BTN8962TAAUMA1
BTN8962TAAUMA1
Infineon Technologies
IC MOTOR DRIVER PAR TO263-7
BSP75NNT
BSP75NNT
Infineon Technologies
IC PWR DRVR N-CHAN 1:1 SOT223-4
S34ML01G100TFI000
S34ML01G100TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I