BSC014N06NSATMA1
  • Share:

Infineon Technologies BSC014N06NSATMA1

Manufacturer No:
BSC014N06NSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 30A/100A TDSON7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC014N06NSATMA1, produced by Infineon Technologies, is a high-performance N-channel MOSFET belonging to the OptiMOS™ 5 family. This component is specifically optimized for synchronous rectification in switched mode power supplies (SMPS), making it an ideal choice for various industrial and consumer applications. It is designed to enhance system efficiency, reduce the need for paralleling, increase power density, and lower system costs. The MOSFET is also suitable for use in life-support devices, automotive, aviation, and aerospace applications, subject to express written approval from Infineon Technologies.

Key Specifications

Parameter Value Unit Note/Test Condition
VDS (Drain-Source Voltage) 60 V
RDS(on) (On-State Resistance) 1.45 mΩ
ID (Continuous Drain Current) 257 A VGS = 10 V, TJ = 25°C
ID (Continuous Drain Current at TJ = 100°C) 182 A VGS = 10 V, TJ = 100°C
Qg (Total Gate Charge) 100 nC
Qg (Total Gate Charge from 0V to 10V) 89 nC
TJ (Junction Temperature) 175 °C
Package PG-TDSON-8

Key Features

  • Optimized for high-performance synchronous rectification in SMPS applications.
  • 40% lower RDS(on) compared to alternative devices.
  • 40% improvement in Figure of Merit (FOM) over similar devices.
  • RoHS compliant and halogen-free according to IEC61249-2-21.
  • MSL1 rated.
  • 100% avalanche tested).
  • Superior thermal resistance).
  • Higher solder joint reliability due to enlarged source interconnection).

Applications

  • Synchronous rectification in switched mode power supplies (SMPS).
  • Solar micro inverters.
  • Isolated DC-DC converters).
  • Motor control for 12-48V systems).
  • Or-ing switches).

Q & A

  1. What is the maximum drain-source voltage of the BSC014N06NSATMA1 MOSFET?

    The maximum drain-source voltage is 60 V).

  2. What is the on-state resistance (RDS(on)) of this MOSFET?

    The on-state resistance is 1.45 mΩ).

  3. What is the continuous drain current rating at 25°C and 100°C?

    The continuous drain current is 257 A at 25°C and 182 A at 100°C).

  4. Is the BSC014N06NSATMA1 RoHS compliant?

    Yes, it is RoHS compliant and halogen-free).

  5. What are the key applications of this MOSFET?

    Key applications include synchronous rectification in SMPS, solar micro inverters, isolated DC-DC converters, motor control, and or-ing switches).

  6. What is the junction temperature rating of this MOSFET?

    The junction temperature rating is 175°C).

  7. Is the BSC014N06NSATMA1 suitable for use in life-support devices?

    Yes, but only with express written approval from Infineon Technologies).

  8. What package type does the BSC014N06NSATMA1 come in?

    The package type is PG-TDSON-8).

  9. Does the BSC014N06NSATMA1 have any special thermal features?

    Yes, it has superior thermal resistance and higher solder joint reliability).

  10. Is the BSC014N06NSATMA1 100% avalanche tested?

    Yes, it is 100% avalanche tested).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.45mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.8V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:89 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-17
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$4.09
215

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC014N06NSATMA1 BSC034N06NSATMA1 BSC016N06NSATMA1 BSC019N06NSATMA1 BSC014N06NSTATMA1 BSC012N06NSATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc) 100A (Tc) 30A (Ta), 100A (Tc) 100A (Ta) 100A (Tc) 36A (Ta), 306A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.45mOhm @ 50A, 10V 3.4mOhm @ 50A, 10V 1.6mOhm @ 50A, 10V 1.95mOhm @ 50A, 10V 1.45mOhm @ 50A, 10V 1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.8V @ 120µA 3.3V @ 41µA 2.8V @ 95µA 3.3V @ 74µA 3.3V @ 120µA 3.3V @ 147µA
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V 41 nC @ 10 V 71 nC @ 10 V 77 nC @ 10 V 104 nC @ 10 V 143 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 30 V 3000 pF @ 30 V 5200 pF @ 30 V 5250 pF @ 30 V 8125 pF @ 30 V 11000 pF @ 30 V
FET Feature - - - - - -
Power Dissipation (Max) 2.5W (Ta), 156W (Tc) 2.5W (Ta), 74W (Tc) 2.5W (Ta), 139W (Tc) 136W (Ta) 3W (Ta), 188W (Tc) 214W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-17 PG-TDSON-8-7 PG-TDSON-8 FL PG-TDSON-8 FL PG-TDSON-8 FL PG-TSON-8-3
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

BTS70302EPADAUGHBRDTOBO1
BTS70302EPADAUGHBRDTOBO1
Infineon Technologies
PROFET +2 12V BTS7030-2EPA DAUGH
BAS70-06E6433
BAS70-06E6433
Infineon Technologies
SCHOTTKY DIODE - HIGH SPEED SWIT
BAS4007WH6327XTSA1
BAS4007WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT343
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BAS16E6393HTSA1
BAS16E6393HTSA1
Infineon Technologies
DIODE GP 80V 250MA SOT23-3
BC847BWE6327
BC847BWE6327
Infineon Technologies
TRANS NPN 45V 0.1A SOT323-3
BC80740E6327
BC80740E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC807-16
BC807-16
Infineon Technologies
TRANS PNP 45V 0.8A SOT23-3
BCP5310H6327XTSA1
BCP5310H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
BC 856BW E6433
BC 856BW E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
IRFR5305TRPBF
IRFR5305TRPBF
Infineon Technologies
MOSFET P-CH 55V 31A DPAK
BTS723GWNT
BTS723GWNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-14