BSC014N06NSATMA1
  • Share:

Infineon Technologies BSC014N06NSATMA1

Manufacturer No:
BSC014N06NSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 30A/100A TDSON7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC014N06NSATMA1, produced by Infineon Technologies, is a high-performance N-channel MOSFET belonging to the OptiMOS™ 5 family. This component is specifically optimized for synchronous rectification in switched mode power supplies (SMPS), making it an ideal choice for various industrial and consumer applications. It is designed to enhance system efficiency, reduce the need for paralleling, increase power density, and lower system costs. The MOSFET is also suitable for use in life-support devices, automotive, aviation, and aerospace applications, subject to express written approval from Infineon Technologies.

Key Specifications

Parameter Value Unit Note/Test Condition
VDS (Drain-Source Voltage) 60 V
RDS(on) (On-State Resistance) 1.45 mΩ
ID (Continuous Drain Current) 257 A VGS = 10 V, TJ = 25°C
ID (Continuous Drain Current at TJ = 100°C) 182 A VGS = 10 V, TJ = 100°C
Qg (Total Gate Charge) 100 nC
Qg (Total Gate Charge from 0V to 10V) 89 nC
TJ (Junction Temperature) 175 °C
Package PG-TDSON-8

Key Features

  • Optimized for high-performance synchronous rectification in SMPS applications.
  • 40% lower RDS(on) compared to alternative devices.
  • 40% improvement in Figure of Merit (FOM) over similar devices.
  • RoHS compliant and halogen-free according to IEC61249-2-21.
  • MSL1 rated.
  • 100% avalanche tested).
  • Superior thermal resistance).
  • Higher solder joint reliability due to enlarged source interconnection).

Applications

  • Synchronous rectification in switched mode power supplies (SMPS).
  • Solar micro inverters.
  • Isolated DC-DC converters).
  • Motor control for 12-48V systems).
  • Or-ing switches).

Q & A

  1. What is the maximum drain-source voltage of the BSC014N06NSATMA1 MOSFET?

    The maximum drain-source voltage is 60 V).

  2. What is the on-state resistance (RDS(on)) of this MOSFET?

    The on-state resistance is 1.45 mΩ).

  3. What is the continuous drain current rating at 25°C and 100°C?

    The continuous drain current is 257 A at 25°C and 182 A at 100°C).

  4. Is the BSC014N06NSATMA1 RoHS compliant?

    Yes, it is RoHS compliant and halogen-free).

  5. What are the key applications of this MOSFET?

    Key applications include synchronous rectification in SMPS, solar micro inverters, isolated DC-DC converters, motor control, and or-ing switches).

  6. What is the junction temperature rating of this MOSFET?

    The junction temperature rating is 175°C).

  7. Is the BSC014N06NSATMA1 suitable for use in life-support devices?

    Yes, but only with express written approval from Infineon Technologies).

  8. What package type does the BSC014N06NSATMA1 come in?

    The package type is PG-TDSON-8).

  9. Does the BSC014N06NSATMA1 have any special thermal features?

    Yes, it has superior thermal resistance and higher solder joint reliability).

  10. Is the BSC014N06NSATMA1 100% avalanche tested?

    Yes, it is 100% avalanche tested).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.45mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.8V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:89 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-17
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$4.09
215

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC014N06NSATMA1 BSC034N06NSATMA1 BSC016N06NSATMA1 BSC019N06NSATMA1 BSC014N06NSTATMA1 BSC012N06NSATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc) 100A (Tc) 30A (Ta), 100A (Tc) 100A (Ta) 100A (Tc) 36A (Ta), 306A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.45mOhm @ 50A, 10V 3.4mOhm @ 50A, 10V 1.6mOhm @ 50A, 10V 1.95mOhm @ 50A, 10V 1.45mOhm @ 50A, 10V 1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.8V @ 120µA 3.3V @ 41µA 2.8V @ 95µA 3.3V @ 74µA 3.3V @ 120µA 3.3V @ 147µA
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V 41 nC @ 10 V 71 nC @ 10 V 77 nC @ 10 V 104 nC @ 10 V 143 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 30 V 3000 pF @ 30 V 5200 pF @ 30 V 5250 pF @ 30 V 8125 pF @ 30 V 11000 pF @ 30 V
FET Feature - - - - - -
Power Dissipation (Max) 2.5W (Ta), 156W (Tc) 2.5W (Ta), 74W (Tc) 2.5W (Ta), 139W (Tc) 136W (Ta) 3W (Ta), 188W (Tc) 214W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-17 PG-TDSON-8-7 PG-TDSON-8 FL PG-TDSON-8 FL PG-TDSON-8 FL PG-TSON-8-3
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3

Related Product By Brand

BAV199E6433HTMA1
BAV199E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAS7006B5003
BAS7006B5003
Infineon Technologies
SCHOTTKY DIODE
BAV 99 B6327
BAV 99 B6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAS40B5000
BAS40B5000
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC857SH6433XTMA1
BC857SH6433XTMA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BFR93AE6327HTSA1
BFR93AE6327HTSA1
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT23-3
BCX5310E6327
BCX5310E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
MMBTA42LT1HTSA1
MMBTA42LT1HTSA1
Infineon Technologies
TRANS NPN 300V 0.5A SOT23
BCX5616H6327XTSA1
BCX5616H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BC817K25WE6327HTSA1
BC817K25WE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
IRF4905STRRPBF
IRF4905STRRPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
IPD30N10S3L34ATMA1
IPD30N10S3L34ATMA1
Infineon Technologies
MOSFET N-CH 100V 30A TO252-3