BSC014N06NSATMA1
  • Share:

Infineon Technologies BSC014N06NSATMA1

Manufacturer No:
BSC014N06NSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 30A/100A TDSON7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC014N06NSATMA1, produced by Infineon Technologies, is a high-performance N-channel MOSFET belonging to the OptiMOS™ 5 family. This component is specifically optimized for synchronous rectification in switched mode power supplies (SMPS), making it an ideal choice for various industrial and consumer applications. It is designed to enhance system efficiency, reduce the need for paralleling, increase power density, and lower system costs. The MOSFET is also suitable for use in life-support devices, automotive, aviation, and aerospace applications, subject to express written approval from Infineon Technologies.

Key Specifications

Parameter Value Unit Note/Test Condition
VDS (Drain-Source Voltage) 60 V
RDS(on) (On-State Resistance) 1.45 mΩ
ID (Continuous Drain Current) 257 A VGS = 10 V, TJ = 25°C
ID (Continuous Drain Current at TJ = 100°C) 182 A VGS = 10 V, TJ = 100°C
Qg (Total Gate Charge) 100 nC
Qg (Total Gate Charge from 0V to 10V) 89 nC
TJ (Junction Temperature) 175 °C
Package PG-TDSON-8

Key Features

  • Optimized for high-performance synchronous rectification in SMPS applications.
  • 40% lower RDS(on) compared to alternative devices.
  • 40% improvement in Figure of Merit (FOM) over similar devices.
  • RoHS compliant and halogen-free according to IEC61249-2-21.
  • MSL1 rated.
  • 100% avalanche tested).
  • Superior thermal resistance).
  • Higher solder joint reliability due to enlarged source interconnection).

Applications

  • Synchronous rectification in switched mode power supplies (SMPS).
  • Solar micro inverters.
  • Isolated DC-DC converters).
  • Motor control for 12-48V systems).
  • Or-ing switches).

Q & A

  1. What is the maximum drain-source voltage of the BSC014N06NSATMA1 MOSFET?

    The maximum drain-source voltage is 60 V).

  2. What is the on-state resistance (RDS(on)) of this MOSFET?

    The on-state resistance is 1.45 mΩ).

  3. What is the continuous drain current rating at 25°C and 100°C?

    The continuous drain current is 257 A at 25°C and 182 A at 100°C).

  4. Is the BSC014N06NSATMA1 RoHS compliant?

    Yes, it is RoHS compliant and halogen-free).

  5. What are the key applications of this MOSFET?

    Key applications include synchronous rectification in SMPS, solar micro inverters, isolated DC-DC converters, motor control, and or-ing switches).

  6. What is the junction temperature rating of this MOSFET?

    The junction temperature rating is 175°C).

  7. Is the BSC014N06NSATMA1 suitable for use in life-support devices?

    Yes, but only with express written approval from Infineon Technologies).

  8. What package type does the BSC014N06NSATMA1 come in?

    The package type is PG-TDSON-8).

  9. Does the BSC014N06NSATMA1 have any special thermal features?

    Yes, it has superior thermal resistance and higher solder joint reliability).

  10. Is the BSC014N06NSATMA1 100% avalanche tested?

    Yes, it is 100% avalanche tested).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.45mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.8V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:89 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-17
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$4.09
215

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC014N06NSATMA1 BSC034N06NSATMA1 BSC016N06NSATMA1 BSC019N06NSATMA1 BSC014N06NSTATMA1 BSC012N06NSATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc) 100A (Tc) 30A (Ta), 100A (Tc) 100A (Ta) 100A (Tc) 36A (Ta), 306A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.45mOhm @ 50A, 10V 3.4mOhm @ 50A, 10V 1.6mOhm @ 50A, 10V 1.95mOhm @ 50A, 10V 1.45mOhm @ 50A, 10V 1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.8V @ 120µA 3.3V @ 41µA 2.8V @ 95µA 3.3V @ 74µA 3.3V @ 120µA 3.3V @ 147µA
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V 41 nC @ 10 V 71 nC @ 10 V 77 nC @ 10 V 104 nC @ 10 V 143 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 30 V 3000 pF @ 30 V 5200 pF @ 30 V 5250 pF @ 30 V 8125 pF @ 30 V 11000 pF @ 30 V
FET Feature - - - - - -
Power Dissipation (Max) 2.5W (Ta), 156W (Tc) 2.5W (Ta), 74W (Tc) 2.5W (Ta), 139W (Tc) 136W (Ta) 3W (Ta), 188W (Tc) 214W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-17 PG-TDSON-8-7 PG-TDSON-8 FL PG-TDSON-8 FL PG-TDSON-8 FL PG-TSON-8-3
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

BAS21UE6359HTMA1
BAS21UE6359HTMA1
Infineon Technologies
DIODE GP 200V 125MA SC74
BAS4002LE6327
BAS4002LE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAT54WE6327
BAT54WE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS16WE6327HTSA1
BAS16WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BC858B
BC858B
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BCX5310E6327HTSA1
BCX5310E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BC847BWE6433HTMA1
BC847BWE6433HTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BF998E6327
BF998E6327
Infineon Technologies
BF998 - RF SMALL SIGNAL TRANSIST
IRFR120NTRPBF
IRFR120NTRPBF
Infineon Technologies
MOSFET N-CH 100V 9.4A DPAK
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
IPW65R041CFD7XKSA1
IPW65R041CFD7XKSA1
Infineon Technologies
650V FET COOLMOS TO247
BTS6143DAUMA1
BTS6143DAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5