BSC014N06NSTATMA1
  • Share:

Infineon Technologies BSC014N06NSTATMA1

Manufacturer No:
BSC014N06NSTATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 100A TDSON-8 FL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC014N06NSTATMA1 is a high-performance N-Channel power MOSFET produced by Infineon Technologies. This device is designed for high-power applications requiring low on-resistance and high current handling. It features a TDSON-8 surface mount package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
ID (Continuous Drain Current at Tc)100 A
RDS(on) (On-Resistance)0.0012 ohm
PD (Power Dissipation at Ta)3 W
PD (Power Dissipation at Tc)188 W
PackageTDSON-8, Surface Mount

Key Features

  • Low on-resistance (RDS(on)) of 0.0012 ohm, reducing power losses and improving efficiency.
  • High continuous drain current (ID) of 100 A, suitable for high-power applications.
  • TDSON-8 surface mount package, offering a compact and thermally efficient design.
  • High power dissipation capability, with 188 W at Tc and 3 W at Ta.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power management.
  • Automotive systems requiring high reliability and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the BSC014N06NSTATMA1?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the continuous drain current rating of the BSC014N06NSTATMA1?
    The continuous drain current (ID) at Tc is 100 A.
  3. What is the on-resistance of the BSC014N06NSTATMA1?
    The on-resistance (RDS(on)) is 0.0012 ohm.
  4. What package type does the BSC014N06NSTATMA1 use?
    The BSC014N06NSTATMA1 uses a TDSON-8 surface mount package.
  5. What are the power dissipation ratings for the BSC014N06NSTATMA1?
    The power dissipation ratings are 3 W at Ta and 188 W at Tc.
  6. What are some common applications for the BSC014N06NSTATMA1?
    Common applications include power supplies, DC-DC converters, motor control systems, and industrial power management.
  7. Is the BSC014N06NSTATMA1 suitable for automotive applications?
    Yes, it is suitable for automotive systems due to its high reliability and efficiency.
  8. Where can I purchase the BSC014N06NSTATMA1?
    You can purchase the BSC014N06NSTATMA1 from distributors such as Digi-Key, Mouser, and Farnell.
  9. What is the return policy for the BSC014N06NSTATMA1?
    Many distributors offer a 30-day return policy for this product.
  10. How does the TDSON-8 package benefit the BSC014N06NSTATMA1?
    The TDSON-8 package provides a compact and thermally efficient design, enhancing the overall performance of the MOSFET.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.45mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.3V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:104 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8125 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 188W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8 FL
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$4.10
61

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC014N06NSTATMA1 BSC016N06NSTATMA1 BSC014N06NSATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 31A (Ta), 100A (Tc) 30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.45mOhm @ 50A, 10V 1.6mOhm @ 50A, 10V 1.45mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.3V @ 120µA 3.3V @ 95µA 2.8V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V 95 nC @ 10 V 89 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8125 pF @ 30 V 6500 pF @ 30 V 6500 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 3W (Ta), 188W (Tc) 3W (Ta), 167W (Tc) 2.5W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8 FL PG-TDSON-8 FL PG-TDSON-8-17
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK

Related Product By Brand

BAV 99W H6433
BAV 99W H6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BC847SH6433XTMA1
BC847SH6433XTMA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BFR93AWH6327XTSA1
BFR93AWH6327XTSA1
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT323-3
BFS 17P E6433
BFS 17P E6433
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT23-3
BC858B
BC858B
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BC847BWH6433XTMA1
BC847BWH6433XTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCX5610H6327XTSA1
BCX5610H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
2N7002DWH6327XTSA1
2N7002DWH6327XTSA1
Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
IRF9540NPBF
IRF9540NPBF
Infineon Technologies
MOSFET P-CH 100V 23A TO220AB
IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
IPD50P04P4L11ATMA1
IPD50P04P4L11ATMA1
Infineon Technologies
MOSFET P-CH 40V 50A TO252-3
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3