BSC010N04LSIATMA1
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Infineon Technologies BSC010N04LSIATMA1

Manufacturer No:
BSC010N04LSIATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 37A/100A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC010N04LSIATMA1 is a high-performance N-channel MOSFET from Infineon Technologies, designed to optimize system efficiency and power density. This device is part of Infineon's 40V and 60V MOSFET product families, which are renowned for their low RDS(on) and excellent switching behavior, making them ideal for fast switching applications. The BSC010N04LSIATMA1 leverages advanced thin wafer technology to achieve significant improvements over alternative devices.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)40 V
VGS (Gate-Source Voltage)±20 V
RDS(on) (On-State Resistance)1.1 mΩ (typical at VGS = 10 V, ID = 20 A)
ID (Continuous Drain Current)80 A
PD (Power Dissipation)Dependent on package and thermal conditions
TJ (Junction Temperature)-55°C to 150°C
PackageTO-263 (D2PAK)

Key Features

  • Optimized for synchronous rectification
  • 15% lower RDS(on) than alternative devices
  • 31% improvement of Figure of Merit (RDS(on) x Qg) over similar devices
  • RoHS compliant - halogen free
  • MSL1 rated

Applications

  • Synchronous rectification
  • Solar micro inverters
  • Isolated DC-DC converters
  • Motor control
  • Or-ing switches

Q & A

  1. What is the maximum drain-source voltage of the BSC010N04LSIATMA1?
    The maximum drain-source voltage (VDS) is 40 V.
  2. What is the typical on-state resistance of the BSC010N04LSIATMA1?
    The typical on-state resistance (RDS(on)) is 1.1 mΩ at VGS = 10 V and ID = 20 A.
  3. Is the BSC010N04LSIATMA1 RoHS compliant?
    Yes, the BSC010N04LSIATMA1 is RoHS compliant and halogen free.
  4. What are the primary applications of the BSC010N04LSIATMA1?
    The primary applications include synchronous rectification, solar micro inverters, isolated DC-DC converters, motor control, and Or-ing switches.
  5. What is the continuous drain current rating of the BSC010N04LSIATMA1?
    The continuous drain current (ID) is 80 A.
  6. What is the junction temperature range of the BSC010N04LSIATMA1?
    The junction temperature (TJ) range is -55°C to 150°C.
  7. What package type is the BSC010N04LSIATMA1 available in?
    The BSC010N04LSIATMA1 is available in the TO-263 (D2PAK) package.
  8. How does the BSC010N04LSIATMA1 improve system efficiency?
    The device offers the highest system efficiency due to its low RDS(on) and improved Figure of Merit, reducing the need for paralleling and increasing power density.
  9. Is the BSC010N04LSIATMA1 MSL1 rated?
    Yes, the BSC010N04LSIATMA1 is MSL1 rated.
  10. What are the benefits of using the BSC010N04LSIATMA1 in power applications?
    The benefits include highest system efficiency, less paralleling required, increased power density, system cost reduction, and very low voltage overshoot.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:37A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.05mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6200 pF @ 20 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):2.5W (Ta), 139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8 FL
Package / Case:8-PowerTDFN
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Similar Products

Part Number BSC010N04LSIATMA1 BSC010N04LSTATMA1 BSC014N04LSIATMA1 BSC010N04LS6ATMA1 BSC010N04LSATMA1 BSC010N04LSCATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 40 V -
Current - Continuous Drain (Id) @ 25°C 37A (Ta), 100A (Tc) 39A (Ta), 100A (Tc) 31A (Ta), 100A (Tc) 40A (Ta), 100A (Tc) 38A (Ta), 100A (Tc) 282A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 1.05mOhm @ 50A, 10V 1mOhm @ 50A, 10V 1.45mOhm @ 50A, 10V 1mOhm @ 50A, 10V 1mOhm @ 50A, 10V -
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 2.3V @ 250µA 2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V 133 nC @ 10 V 55 nC @ 10 V 67 nC @ 4.5 V 95 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 6200 pF @ 20 V 9520 pF @ 20 V 4000 pF @ 20 V 4600 pF @ 20 V 6800 pF @ 20 V -
FET Feature Schottky Diode (Body) - - - - -
Power Dissipation (Max) 2.5W (Ta), 139W (Tc) 3W (Ta), 167W (Tc) 2.5W (Ta), 96W (Tc) 3W (Ta), 150W (Tc) 2.5W (Ta), 139W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Supplier Device Package PG-TDSON-8 FL PG-TDSON-8 FL PG-TDSON-8 FL PG-TDSON-8-6 PG-TDSON-8 FL -
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN -

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