Overview
The BC846AE6433 is a general-purpose NPN bipolar transistor array produced by Infineon Technologies. This component is part of the BC846 series, known for its high current gain and low collector-emitter saturation voltage, making it suitable for various applications in audio frequency (AF) input stages and driver circuits. The transistor array features two galvanically isolated transistors in a single package, ensuring good matching between the transistors. It is also Pb-free and compliant with RoHS standards, as well as qualified according to AEC Q101 standards for automotive applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Breakdown Voltage (VBRCBO) | 80 | V |
| Collector-Emitter Breakdown Voltage (VBRCEO) | 65 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.25 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | 0.7 | V |
| DC Current Gain (hFE) | 110-520 | - |
| Collector Cutoff Current (ICBO) | 15 nA | - |
| Emitter-Base Breakdown Voltage (VBREBO) | 6.0 | V |
| Maximum Collector Current | 100 mA | - |
| Maximum Collector Power Dissipation | 330 mW | - |
| Operating Temperature Range | -55°C to +125°C | - |
Key Features
- High current gain (hFE) ranging from 110 to 520.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.25 V.
- Two galvanically isolated transistors in one package with good matching.
- Pb-free and RoHS compliant package.
- Qualified according to AEC Q101 standards for automotive applications.
Applications
The BC846AE6433 is primarily used in audio frequency (AF) input stages and driver applications. Its high current gain and low collector-emitter saturation voltage make it suitable for a variety of electronic circuits, including audio amplifiers, switching circuits, and general-purpose transistor applications.
Q & A
- What is the BC846AE6433 used for? The BC846AE6433 is used in audio frequency (AF) input stages and driver applications.
- What is the collector-emitter breakdown voltage of the BC846AE6433? The collector-emitter breakdown voltage (VBRCEO) is 65 V.
- What is the DC current gain (hFE) of the BC846AE6433? The DC current gain (hFE) ranges from 110 to 520.
- Is the BC846AE6433 Pb-free and RoHS compliant? Yes, the BC846AE6433 is Pb-free and RoHS compliant.
- What are the operating temperature ranges for the BC846AE6433? The operating temperature range is -55°C to +125°C.
- What is the maximum collector current of the BC846AE6433? The maximum collector current is 100 mA.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BC846AE6433? The collector-emitter saturation voltage (VCE(sat)) is 0.25 V.
- Does the BC846AE6433 have galvanically isolated transistors? Yes, it features two galvanically isolated transistors in one package.
- Is the BC846AE6433 qualified for automotive applications? Yes, it is qualified according to AEC Q101 standards for automotive applications.
- What is the maximum collector power dissipation of the BC846AE6433? The maximum collector power dissipation is 330 mW.
