Overview
The BC807-40E6433 is a PNP silicon AF (Audio Frequency) transistor manufactured by Infineon Technologies. This transistor is designed for general AF applications, including input stages and driver applications. It is known for its high current gain, low collector-emitter saturation voltage, and good matching between the two internal isolated transistors within the same package. The BC807-40E6433 is packaged in a SOT23-3 surface mount package and is RoHS compliant, making it suitable for a wide range of modern electronic designs.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 45 | V |
| Collector-Base Voltage | VCBO | 50 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current | IC | 500 | mA |
| Peak Collector Current | ICM | 1000 | mA |
| Base Current | IB | 100 | mA |
| Peak Base Current | IBM | 200 | mA |
| Total Power Dissipation | Ptot | 330 | mW |
| Junction Temperature | Tj | 150 | °C |
| Storage Temperature | Tstg | -65 to 150 | °C |
| DC Current Gain (hFE) | hFE | 250 (min) to 400 (max) | |
| Collector-Emitter Saturation Voltage | VCEsat | 0.7 | V |
| Base Emitter Saturation Voltage | VBEsat | 1.2 | V |
| Transition Frequency | fT | 200 | MHz |
Key Features
- High current gain (hFE: 250 to 400 at IC = 500 mA, VCE = 1 V)
- Low collector-emitter saturation voltage (VCEsat: 0.7 V at IC = 500 mA, IB = 50 mA)
- Low base emitter saturation voltage (VBEsat: 1.2 V at IC = 500 mA, IB = 50 mA)
- High transition frequency (fT: 200 MHz at IC = 50 mA, VCE = 5 V)
- Good matching between the two internal isolated transistors
- Pb-free (RoHS compliant) package
- Qualified according to AEC Q101
Applications
The BC807-40E6433 is ideally suited for various applications including:
- Audio Frequency (AF) input stages
- Driver applications
- General AF applications
- Switching and amplifier circuits
Q & A
- What is the collector-emitter voltage rating of the BC807-40E6433?
The collector-emitter voltage rating is 45 V. - What is the maximum collector current of the BC807-40E6433?
The maximum collector current is 500 mA. - What is the typical DC current gain (hFE) of the BC807-40E6433?
The typical DC current gain (hFE) is between 250 to 400 at IC = 500 mA, VCE = 1 V. - What is the collector-emitter saturation voltage of the BC807-40E6433?
The collector-emitter saturation voltage is 0.7 V at IC = 500 mA, IB = 50 mA. - Is the BC807-40E6433 RoHS compliant?
Yes, the BC807-40E6433 is RoHS compliant. - What is the junction temperature range of the BC807-40E6433?
The junction temperature range is -65 to 150 °C. - What is the transition frequency of the BC807-40E6433?
The transition frequency is 200 MHz at IC = 50 mA, VCE = 5 V. - What package type is the BC807-40E6433 available in?
The BC807-40E6433 is available in a SOT23-3 surface mount package. - What are the typical applications of the BC807-40E6433?
The typical applications include AF input stages, driver applications, and general AF applications. - Is the BC807-40E6433 qualified according to any automotive standards?
Yes, it is qualified according to AEC Q101.
