Overview
The BD13510S is a medium-power silicon NPN transistor produced by onsemi. This transistor is part of the BD135, BD137, and BD139 series, which are designed for use in various electronic applications, including audio amplifiers and drivers. The BD13510S is particularly suited for complementary or quasi-complementary circuits and is known for its high DC current gain and robust electrical characteristics.
Key Specifications
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 45 | Vdc |
| Collector-Base Voltage | VCBO | 45 | Vdc |
| Emitter-Base Voltage | VEBO | 5.0 | Vdc |
| Collector Current (DC) | IC | 1.5 | A |
| Base Current | IB | 0.5 | A |
| Total Device Dissipation at TA = 25°C | PD | 1.25 | W |
| Total Device Dissipation at TC = 25°C | PD | 12.5 | W |
| Junction Temperature | TJ | -55 to +150 | °C |
| Storage Temperature | TSTG | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 10 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 100 | °C/W |
| DC Current Gain (VCE = 2 V, IC = 0.5 A) | hFE | 25 - 250 | |
| Collector-Emitter Saturation Voltage (IC = 0.5 A, IB = 0.05 A) | VCE(sat) | 0.5 | Vdc |
| Base-Emitter On Voltage (IC = 0.5 A, VCE = 2 V) | VBE(on) | 1 | Vdc |
Key Features
- High DC current gain, making it suitable for audio amplifiers and drivers.
- Complementary to BD136, BD138, and BD140 transistors.
- Pb-free, halogen-free, and RoHS compliant.
- Medium power handling capability with a maximum collector current of 1.5 A and a total device dissipation of 12.5 W at TC = 25°C.
- Wide operating temperature range from -55°C to +150°C.
- Low collector-emitter saturation voltage and base-emitter on voltage.
Applications
- Audio amplifiers and drivers.
- Medium power linear and switching applications.
- Complementary or quasi-complementary circuits.
- General-purpose amplification and switching in electronic circuits.
Q & A
- What is the maximum collector-emitter voltage for the BD13510S transistor?
The maximum collector-emitter voltage (VCEO) for the BD13510S is 45 Vdc.
- What is the maximum collector current for the BD13510S transistor?
The maximum collector current (IC) for the BD13510S is 1.5 A.
- Is the BD13510S transistor RoHS compliant?
- What is the typical DC current gain for the BD13510S transistor?
The typical DC current gain (hFE) for the BD13510S ranges from 25 to 250.
- What is the collector-emitter saturation voltage for the BD13510S transistor?
The collector-emitter saturation voltage (VCE(sat)) for the BD13510S is 0.5 Vdc.
- What is the base-emitter on voltage for the BD13510S transistor?
The base-emitter on voltage (VBE(on)) for the BD13510S is 1 Vdc.
- What is the thermal resistance, junction-to-case for the BD13510S transistor?
The thermal resistance, junction-to-case (RJC) for the BD13510S is 10 °C/W.
- What is the operating temperature range for the BD13510S transistor?
The operating temperature range for the BD13510S is from -55°C to +150°C.
- What are the typical applications for the BD13510S transistor?
The BD13510S is typically used in audio amplifiers, drivers, and medium power linear and switching applications.
- Is the BD13510S transistor suitable for high-power applications?
No, the BD13510S is designed for medium-power applications with a maximum total device dissipation of 12.5 W at TC = 25°C.
