Overview
The BD13516S is a plastic, NPN Power Bipolar Junction Transistor (BJT) produced by onsemi. This transistor is part of the BD135 series, designed for use in various applications such as audio amplifiers and drivers, utilizing complementary or quasi-complementary circuits. The BD13516S is known for its medium power handling capabilities and is suitable for both linear and switching applications.
Key Specifications
| Parameter | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | 45 | Vdc |
| Collector Current (DC) | IC | - | 1.5 | A |
| Base Current | IB | - | 0.5 | A |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | 0.5 | Vdc |
| Base-Emitter On Voltage | VBE(on) | - | 1 | Vdc |
| DC Current Gain | hFE | 25 | 250 | - |
| Total Device Dissipation (TC = 25°C) | PD | - | 12.5 | W |
| Junction Temperature | TJ | -55 | 150 | °C |
| Storage Temperature | TSTG | -55 | 150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | - | 10 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | - | 100 | °C/W |
Key Features
- Complementary to BD136, BD138, and BD140 transistors.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- Medium power handling with a maximum collector current of 1.5 A and collector-emitter voltage of 45 V.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.5 V.
- High DC current gain (hFE) ranging from 25 to 250.
- Operating and storage junction temperature range from -55°C to +150°C.
Applications
- Audio amplifiers and drivers.
- Medium power linear and switching applications.
- Power supplies.
- General-purpose amplification and switching circuits.
Q & A
- What is the maximum collector current of the BD13516S transistor?
The maximum collector current (IC) of the BD13516S transistor is 1.5 A.
- What is the collector-emitter voltage (VCEO) of the BD13516S transistor?
The collector-emitter voltage (VCEO) of the BD13516S transistor is 45 V.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BD13516S transistor?
The collector-emitter saturation voltage (VCE(sat)) of the BD13516S transistor is 0.5 V.
- What is the DC current gain (hFE) range of the BD13516S transistor?
The DC current gain (hFE) of the BD13516S transistor ranges from 25 to 250.
- Is the BD13516S transistor Pb-Free and RoHS Compliant?
Yes, the BD13516S transistor is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- What is the junction temperature range of the BD13516S transistor?
The junction temperature range of the BD13516S transistor is from -55°C to +150°C.
- What are the typical applications of the BD13516S transistor?
The BD13516S transistor is typically used in audio amplifiers, drivers, medium power linear and switching applications, and power supplies.
- What is the thermal resistance, junction-to-case (RJC) of the BD13516S transistor?
The thermal resistance, junction-to-case (RJC) of the BD13516S transistor is 10 °C/W.
- What is the thermal resistance, junction-to-ambient (RJA) of the BD13516S transistor?
The thermal resistance, junction-to-ambient (RJA) of the BD13516S transistor is 100 °C/W.
- What package types are available for the BD13516S transistor?
The BD13516S transistor is available in the TO-126-3 package type.
