BD1356S
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onsemi BD1356S

Manufacturer No:
BD1356S
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 45V 1.5A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD1356S is a medium-power NPN bipolar transistor produced by onsemi. However, it is important to note that the BD1356S is currently obsolete and no longer manufactured. This component was designed for various medium-power applications, including amplifiers and drivers.

Key Specifications

CharacteristicSymbolMinMaxUnit
Collector-Emitter Voltage (IB = 0)VCEO45V
Collector CurrentIC1.5A
Base CurrentIB0.5A
Collector-Emitter Saturation Voltage (IC = 0.5 A, IB = 0.05 A)VCE(sat)0.5V
Base-Emitter On Voltage (IC = 0.5 A, VCE = 2 V)VBE(on)1V
DC Current Gain (IC = 0.5 A, VCE = 2 V)hFE25250
Total Dissipation at Tc ≤ 25 °CPTOT12.5W
Storage TemperatureTstg-65150°C
Max. Operating Junction TemperatureTj150°C

Key Features

  • Medium-power NPN bipolar transistor.
  • Collector-Emitter Voltage up to 45V.
  • Collector Current up to 1.5A.
  • Base Current up to 0.5A.
  • Low Collector-Emitter Saturation Voltage.
  • Wide range of DC Current Gain.
  • High Total Dissipation capacity.
  • Broad operating temperature range.

Applications

The BD1356S, although obsolete, was suitable for various medium-power applications such as audio amplifiers, drivers, and other general-purpose amplification needs. It could be used in complementary or quasi-complementary circuits.

Q & A

  1. What is the BD1356S transistor?
    The BD1356S is a medium-power NPN bipolar transistor produced by onsemi, but it is currently obsolete.
  2. What are the key specifications of the BD1356S?
    Key specifications include a Collector-Emitter Voltage of up to 45V, Collector Current of up to 1.5A, and a Base Current of up to 0.5A.
  3. What are the typical applications of the BD1356S?
    The BD1356S was used in audio amplifiers, drivers, and other general-purpose amplification needs.
  4. Is the BD1356S still available for purchase?
    No, the BD1356S is obsolete and no longer manufactured.
  5. What are the thermal characteristics of the BD1356S?
    The maximum operating junction temperature is 150°C, and the storage temperature range is from -65°C to 150°C.
  6. What is the total dissipation capacity of the BD1356S?
    The total dissipation at Tc ≤ 25 °C is up to 12.5W.
  7. What is the DC current gain range of the BD1356S?
    The DC current gain ranges from 25 to 250.
  8. Can the BD1356S be used in high-temperature environments?
    Yes, it has a broad operating temperature range, but it is no longer available for new designs.
  9. Are there any substitutes available for the BD1356S?
    Yes, there are available substitutes, but they should be checked for compatibility with the specific application.
  10. Where can I find more detailed specifications for the BD1356S?
    More detailed specifications can be found in the datasheets available on the onsemi website or through authorized distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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Similar Products

Part Number BD1356S BD1396S BD1376S BD1366S BD1386S BD13516S
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Active
Transistor Type NPN NPN NPN PNP PNP NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 45 V 80 V 60 V 45 V 60 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3

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