BD1356STU
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onsemi BD1356STU

Manufacturer No:
BD1356STU
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN 45V 1.5A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD1356STU is an NPN epitaxial silicon transistor manufactured by onsemi. This transistor is part of the BD135 series, which includes complementary transistors such as the BD136, BD138, and BD140. The BD1356STU is housed in a TO-126-3 package and is designed for medium power linear and switching applications. It is lead-free and RoHS compliant, making it suitable for a wide range of modern electronic designs.

Key Specifications

ParameterValueUnits
Voltage-Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib500mV @ 50mA, 500mA
Operating Temperature-55 to +150°C°C
Transistor TypeNPN
Mounting TypeThrough Hole
Current-Collector (Ic) (Max)1.5 AA
Collector Cut-off Current (ICBO)0.1 μAμA
Junction Temperature (TJ)150°C°C
Device Dissipation (PC)12.5 W (TC = 25°C), 1.25 W (TA = 25°C)W
Base Current (IB)0.5 AA
Collector-Emitter Saturation Voltage (Vce(sat))0.5 VV
DC Current Gain (hFE)25 to 100

Key Features

  • Complement to BD136, BD138, and BD140 transistors.
  • NPN epitaxial silicon transistor.
  • Medium power linear and switching capabilities.
  • Lead-free and RoHS compliant.
  • Housed in a TO-126-3 package.
  • High collector current of up to 1.5 A.
  • Pulse collector current up to 3.0 A.
  • Collector-emitter voltage of up to 45 V.

Applications

The BD1356STU transistor is suitable for a variety of applications, including:

  • Medium power linear amplifiers.
  • Switching circuits.
  • General-purpose amplification and switching in electronic devices.

Q & A

  1. What is the maximum collector-emitter voltage of the BD1356STU transistor?
    The maximum collector-emitter voltage is 45 V.
  2. What is the maximum collector current of the BD1356STU transistor?
    The maximum collector current is 1.5 A.
  3. What is the package type of the BD1356STU transistor?
    The transistor is housed in a TO-126-3 package.
  4. Is the BD1356STU transistor lead-free and RoHS compliant?
    Yes, it is lead-free and RoHS compliant.
  5. What are the typical applications of the BD1356STU transistor?
    It is used in medium power linear and switching applications.
  6. What is the maximum junction temperature of the BD1356STU transistor?
    The maximum junction temperature is 150°C.
  7. What is the maximum base current of the BD1356STU transistor?
    The maximum base current is 0.5 A.
  8. What is the collector-emitter saturation voltage of the BD1356STU transistor?
    The collector-emitter saturation voltage is 0.5 V.
  9. Is the BD1356STU transistor obsolete?
    Yes, the BD1356STU transistor is listed as obsolete.
  10. What is the storage temperature range for the BD1356STU transistor?
    The storage temperature range is -55 to +150°C.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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Similar Products

Part Number BD1356STU BD1396STU BD1376STU BD1756STU BD1366STU BD1386STU BD13516STU
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Active
Transistor Type NPN NPN NPN NPN PNP PNP NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 3 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 45 V 80 V 60 V 45 V 45 V 60 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 800mV @ 100mA, 1A 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100µA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 1.25 W 1.25 W 1.25 W 30 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - - - 3MHz - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3 TO-126-3

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