MJD350
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Fairchild Semiconductor MJD350

Manufacturer No:
MJD350
Manufacturer:
Fairchild Semiconductor
Package:
Tube
Description:
TRANS PNP 300V 0.5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD350 is a PNP Epitaxial Silicon Transistor produced by Fairchild Semiconductor, now part of ON Semiconductor. This transistor is designed for high-voltage power applications and is available in the TO-252 (D-PAK) package, making it suitable for surface mount applications. The MJD350 is known for its high collector-emitter voltage and current handling capabilities, making it a reliable choice for various power management and control circuits.

Key Specifications

Parameter Value Units
Collector-Base Voltage (VCBO) -300 V
Collector-Emitter Voltage (VCEO) -300 V
Emitter-Base Voltage (VEBO) -3 V
Collector Current (DC) (IC) -0.5 A
Collector Current (Pulse) (ICP) -0.75 A
Collector Dissipation (TC = 25°C) (PC) 15 W
Collector Dissipation (Ta = 25°C) 1.56 W
Junction Temperature (TJ) 150 °C
Storage Temperature (TSTG) -65 ~ 150 °C
Collector-Emitter Sustaining Voltage (VCEO(sus)) -300 V
Collector Cut-off Current (ICEO) -0.1 mA
Emitter Cut-off Current (IEBO) -0.1 mA
DC Current Gain (hFE) 30 ~ 240

Key Features

  • High Voltage Capability: The MJD350 can handle high collector-emitter and collector-base voltages up to 300V, making it suitable for high-voltage applications.
  • High Current Handling: With a collector current of up to 0.5A (DC) and 0.75A (pulse), this transistor is capable of handling significant current loads.
  • Surface Mount Package: Available in the TO-252 (D-PAK) package, which is ideal for surface mount applications and offers good thermal performance.
  • Wide Operating Temperature Range: The transistor can operate over a storage temperature range of -65°C to 150°C, ensuring reliability in various environmental conditions.
  • High DC Current Gain: The DC current gain (hFE) ranges from 30 to 240, providing a wide margin for design flexibility.

Applications

  • Power Management Circuits: The MJD350 is used in various power management circuits due to its high voltage and current handling capabilities.
  • Automotive Systems: It is suitable for automotive applications where high reliability and robust performance are required.
  • Industrial Control Systems: The transistor is used in industrial control systems for motor control, power supplies, and other high-power applications.
  • Consumer Electronics: It can be used in consumer electronics for power switching and control functions.

Q & A

  1. What is the maximum collector-emitter voltage of the MJD350 transistor?

    The maximum collector-emitter voltage (VCEO) of the MJD350 transistor is 300V.

  2. What is the maximum collector current of the MJD350 transistor?

    The maximum collector current (IC) of the MJD350 transistor is 0.5A (DC) and 0.75A (pulse).

  3. In what package is the MJD350 transistor available?

    The MJD350 transistor is available in the TO-252 (D-PAK) package, which is suitable for surface mount applications.

  4. What is the junction temperature range of the MJD350 transistor?

    The junction temperature (TJ) of the MJD350 transistor is up to 150°C.

  5. What is the storage temperature range of the MJD350 transistor?

    The storage temperature range (TSTG) of the MJD350 transistor is -65°C to 150°C.

  6. What is the DC current gain range of the MJD350 transistor?

    The DC current gain (hFE) of the MJD350 transistor ranges from 30 to 240.

  7. Is the MJD350 transistor suitable for high-power applications?

    Yes, the MJD350 transistor is designed for high-power applications due to its high voltage and current handling capabilities.

  8. Can the MJD350 transistor be used in automotive systems?

    Yes, the MJD350 transistor is suitable for automotive applications where high reliability and robust performance are required.

  9. What are some common applications of the MJD350 transistor?

    The MJD350 transistor is commonly used in power management circuits, industrial control systems, consumer electronics, and automotive systems.

  10. Who is the current manufacturer of the MJD350 transistor?

    The MJD350 transistor is currently manufactured by ON Semiconductor, following the integration of Fairchild Semiconductor.

  11. Where can I find more detailed specifications and datasheets for the MJD350 transistor?

    You can find detailed specifications and datasheets for the MJD350 transistor on the ON Semiconductor website or through authorized distributors like Mouser and Digi-Key.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
Power - Max:15 W
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number MJD350 MJD350G MJD50 MJD340
Manufacturer Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type PNP PNP NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 1 A 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V 400 V 300 V
Vce Saturation (Max) @ Ib, Ic - - 1V @ 200mA, 1A -
Current - Collector Cutoff (Max) 100µA 100µA 200µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V 30 @ 50mA, 10V 30 @ 300mA, 10V 30 @ 50mA, 10V
Power - Max 15 W 15 W 1.56 W 1.56 W
Frequency - Transition - - 10MHz -
Operating Temperature - -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK DPAK

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