Overview
The TIP115 is a PNP Epitaxial Silicon Darlington Transistor produced by Fairchild Semiconductor. Although this component is currently obsolete and not in production, it was designed for general-purpose amplifier and low-speed switching applications. The TIP115 is part of a series that includes the TIP116 and TIP117, each with slightly different voltage ratings but similar characteristics.
Key Specifications
Parameter | Value | Unit |
---|---|---|
VCBO (Collector-Base Voltage) | -60 | V |
VCEO (Collector-Emitter Voltage) | -60 | V |
VEBO (Emitter-Base Voltage) | -5 | V |
IC (Collector Current, DC) | -2 | A |
ICP (Collector Current, Pulse) | -4 | A |
IB (Base Current, DC) | -50 | mA |
TJ (Junction Temperature) | 150 | °C |
TSTG (Storage Temperature Range) | -65 to 150 | °C |
PC (Collector Dissipation at TA=25°C) | 2 | W |
PC (Collector Dissipation at TC=25°C) | 50 | W |
VCEO(sus) (Collector-Emitter Sustaining Voltage) | -60 | V |
ICEO (Collector Cut-off Current) | -2 | mA |
ICBO (Collector Cut-off Current) | -1 | mA |
IEBO (Emitter Cut-off Current) | -2 | mA |
hFE (DC Current Gain) | 1000 | |
VCE(sat) (Collector-Emitter Saturation Voltage) | -2.5 | V |
VBE(on) (Base-Emitter ON Voltage) | -2.8 | V |
Key Features
- Monolithic Construction with Built-in Base-Emitter Shunt Resistors: This design enhances the transistor's performance and reliability.
- High DC Current Gain: The TIP115 has a high DC current gain of hFE = 1000 at VCE = -4 V and IC = -1 A, making it suitable for various amplifier applications.
- Low Collector-Emitter Saturation Voltage: With a VCE(sat) of -2.5 V, this transistor minimizes power loss during saturation.
- Industrial Use: Designed for industrial applications, the TIP115 is robust and reliable.
- Complementary to TIP110/TIP111/TIP112: The TIP115 is part of a complementary series, making it easy to find matching NPN transistors for circuit design.
Applications
The TIP115 is suitable for a variety of applications, including:
- General-Purpose Amplifiers: Its high DC current gain and low saturation voltage make it ideal for amplifier circuits.
- Low-Speed Switching Applications: The transistor's characteristics are well-suited for low-speed switching tasks.
- Industrial Control Systems: Its robustness and reliability make it a good choice for industrial control systems.
Q & A
- What is the maximum collector current for the TIP115?
The maximum collector current (DC) for the TIP115 is -2 A, and the maximum pulse collector current is -4 A.
- What is the collector-emitter sustaining voltage for the TIP115?
The collector-emitter sustaining voltage (VCEO(sus)) for the TIP115 is -60 V.
- What is the junction temperature limit for the TIP115?
The junction temperature limit for the TIP115 is 150°C.
- What is the storage temperature range for the TIP115?
The storage temperature range for the TIP115 is -65 to 150°C.
- What is the typical DC current gain for the TIP115?
The typical DC current gain (hFE) for the TIP115 is 1000 at VCE = -4 V and IC = -1 A.
- What is the collector-emitter saturation voltage for the TIP115?
The collector-emitter saturation voltage (VCE(sat)) for the TIP115 is -2.5 V.
- What package type is the TIP115 available in?
The TIP115 is available in the TO-220 3L (Single Gauge) package.
- Is the TIP115 still in production?
No, the TIP115 is obsolete and not in production.
- What are the complementary NPN transistors to the TIP115?
The TIP115 is complementary to the TIP110, TIP111, and TIP112 NPN transistors.
- What are some typical applications for the TIP115?
The TIP115 is typically used in general-purpose amplifier and low-speed switching applications, as well as in industrial control systems.