TIP110
  • Share:

NTE Electronics, Inc TIP110

Manufacturer No:
TIP110
Manufacturer:
NTE Electronics, Inc
Package:
Bag
Description:
TRANS NPN DARL 60V TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP110 is a silicon epitaxial-based NPN transistor in a monolithic Darlington configuration, manufactured by NTE Electronics, Inc. and packaged in a Jedec TO-220 plastic package. This transistor is designed for use in medium power linear and switching applications, offering high performance and reliability.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) 60 V
Collector-Emitter Voltage (VCEO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (DC) (IC) 2 A
Collector Current (Pulse) (ICP) 4 A
Base Current (DC) (IB) 50 mA
Junction Temperature (TJ) 150 °C
Storage Temperature Range (TSTG) -65 to 150 °C
Collector-Emitter Sustaining Voltage (VCEO(sus)) 60 Vdc
Collector Cut-Off Current (ICEO) 2 mA
Emitter Cut-Off Current (IEBO) 2 mA
DC Current Gain (hFE) 2500 (Typ) @ IC = 1.0 A
Collector-Emitter Saturation Voltage (VCE(sat)) 2.5 Vdc (Max) @ IC = 2.0 A

Key Features

  • High DC Current Gain - hFE = 2500 (Typ) @ IC = 1.0 A
  • Collector-Emitter Sustaining Voltage @ 30 mA - VCEO(sus) = 60 Vdc (Min)
  • Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 A
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • Compact TO-220 AB Package
  • Pb-Free Packages are Available

Applications

  • General-Purpose Amplifier
  • Low-Speed Switching
  • Medium Power Linear Applications

Q & A

  1. What is the TIP110 transistor used for?

    The TIP110 is used for general-purpose amplifier and low-speed switching applications, as well as medium power linear applications.

  2. What is the typical DC current gain of the TIP110 transistor?

    The typical DC current gain (hFE) of the TIP110 transistor is 2500 at IC = 1.0 A.

  3. What is the maximum collector-emitter sustaining voltage for the TIP110 transistor?

    The maximum collector-emitter sustaining voltage (VCEO(sus)) for the TIP110 transistor is 60 Vdc.

  4. What is the maximum collector-emitter saturation voltage for the TIP110 transistor?

    The maximum collector-emitter saturation voltage (VCE(sat)) for the TIP110 transistor is 2.5 Vdc at IC = 2.0 A.

  5. What type of package does the TIP110 transistor come in?

    The TIP110 transistor comes in a Jedec TO-220 plastic package.

  6. Is the TIP110 transistor Pb-free?
  7. What is the maximum junction temperature for the TIP110 transistor?

    The maximum junction temperature (TJ) for the TIP110 transistor is 150°C.

  8. What is the storage temperature range for the TIP110 transistor?

    The storage temperature range (TSTG) for the TIP110 transistor is -65 to 150°C.

  9. What are some equivalent transistors to the TIP110?

    Some equivalent transistors to the TIP110 include TIP100, TIP101, TIP102, TIP105, TIP106, and TIP107.

  10. Who manufactures the TIP110 transistor?

    The TIP110 transistor is manufactured by NTE Electronics, Inc.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 8mA, 2A
Current - Collector Cutoff (Max):2mA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 1A, 4V
Power - Max:- 
Frequency - Transition:25MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
0 Remaining View Similar

In Stock

$0.94
852

Please send RFQ , we will respond immediately.

Same Series
TIP111
TIP111
TRANS NPN DARL 80V 2A TO220-3
TIP117G
TIP117G
TRANS PNP DARL 100V 2A TO220
TIP111G
TIP111G
TRANS NPN DARL 80V 2A TO220
TIP115G
TIP115G
TRANS PNP DARL 60V 2A TO220
TIP110G
TIP110G
TRANS NPN DARL 60V 2A TO220
TIP112G
TIP112G
TRANS NPN DARL 100V 2A TO220
TIP116G
TIP116G
TRANS PNP DARL 80V 2A TO220

Similar Products

Part Number TIP110 TIP117 TIP115 TIP116 TIP111 TIP150 TIP140 TIP120 TIP112 TIP110G TIP130 TIP100
Manufacturer NTE Electronics, Inc Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor NTE Electronics, Inc NTE Electronics, Inc NTE Electronics, Inc NTE Electronics, Inc onsemi Central Semiconductor Corp Harris Corporation
Product Status Active Obsolete Active Obsolete Obsolete Active Active Active Active Active Obsolete Obsolete
Transistor Type NPN - Darlington PNP - Darlington PNP - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN NPN - Darlington NPN - Darlington NPN - Darlington - NPN - Darlington
Current - Collector (Ic) (Max) - 2 A 2 A 2 A 2 A 10 A 10 A - 2 A 2 A - 8 A
Voltage - Collector Emitter Breakdown (Max) 60 V 100 V 60 V 80 V 80 V 300 V 60 V 60 V 100 V 60 V - 60 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2V @ 250mA, 5A - 4V @ 20mA, 5A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A - 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max) 2mA 2mA 2mA 2mA 2mA 250µA - 500µA 2mA 2mA - 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V 150 @ 2.5A, 5V 1000 @ 5A, 4V 1000 @ 3A, 3V 1000 @ 1A, 4V 1000 @ 1A, 4V - 1000 @ 3A, 4V
Power - Max - 2 W 2 W 50 W 50 W 80 W 125 W - 2 W 2 W - 80 W
Frequency - Transition 25MHz - - 25MHz 25MHz - - 4MHz - - - 4MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) - -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-218-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220AB TO-220-3 TO-220-3 TO-220 TO-218 TO-220-3 TO-220 TO-220 TO-220-3 TO-220-3

Related Product By Categories

BCV26
BCV26
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
PHN203,518
PHN203,518
NXP Semiconductors
NEXPERIA PHN203 - SMALL SIGNAL F
BC857B-AU_R1_000A1
BC857B-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
BCX56-16115
BCX56-16115
NXP USA Inc.
NOW NEXPERIA SMALL SIGNAL BIPOLA
BC859CLT1
BC859CLT1
onsemi
TRANS PNP 30V 0.1A SOT23-3
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
SS8050-C-AP
SS8050-C-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92
BC807-25-QVL
BC807-25-QVL
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
BUK9Y30-75B/C1,115
BUK9Y30-75B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

1N34A
1N34A
NTE Electronics, Inc
D-GE- 75PRV .005A
1N5337B
1N5337B
NTE Electronics, Inc
DIODE ZENER 4.7V 5W AXIAL
1N5333B
1N5333B
NTE Electronics, Inc
DIODE ZENER 3.3V 5W AXIAL
1N5349B
1N5349B
NTE Electronics, Inc
DIODE ZENER 12V 5W AXIAL
MMBT2222A
MMBT2222A
NTE Electronics, Inc
TRANS NPN 40V 1A SOT23-3
2N6107
2N6107
NTE Electronics, Inc
TRANS PNP 70V 7A TO220
MJ2955
MJ2955
NTE Electronics, Inc
TRANS PNP 60V 15A TO3
BUX48A
BUX48A
NTE Electronics, Inc
TRANS NPN 450V 15A TO3
TIP30C
TIP30C
NTE Electronics, Inc
TRANS PNP 100V 1A TO220
TIP41C
TIP41C
NTE Electronics, Inc
TRANS NPN 100V 6A TO220-3
TIP105
TIP105
NTE Electronics, Inc
TRANS PNP DARL 60V 8A TO220-3
TIP107
TIP107
NTE Electronics, Inc
TRANS PNP DARL 100V 8A TO220