TIP120
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NTE Electronics, Inc TIP120

Manufacturer No:
TIP120
Manufacturer:
NTE Electronics, Inc
Package:
Bag
Description:
TRANS NPN DARL 60V TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP120 transistor, produced by NTE Electronics, Inc., is a plastic medium-power complementary silicon Darlington transistor. It is part of the TIP120, TIP121, and TIP122 series, which are designed for general-purpose amplifier and low-speed switching applications. This NPN transistor is housed in a TO-220 package and is known for its high DC current gain and low collector-emitter saturation voltage, making it suitable for a wide range of electronic applications.

Key Specifications

Parameter Specification
Transistor Type NPN Darlington
Package Type TO-220
Collector-Emitter Voltage (VCEO) 60 Vdc (Min)
Collector-Base Voltage (VCB) 60 Vdc
Emitter-Base Voltage (VEB) 5.0 Vdc
Continuous Collector Current (IC) 5.0 A
Peak Collector Current (IC) 8.0 A
Base Current (IB) 120 mA
Total Power Dissipation @ TC = 25°C 65 W
DC Current Gain (hFE) 2500 (Typ) @ IC = 4.0 A
Collector-Emitter Saturation Voltage (VCE(sat)) 2.0 Vdc (Max) @ IC = 3.0 A, IB = 12 mA
Operating and Storage Junction Temperature Range –65 to +150 °C

Key Features

  • High DC Current Gain: The TIP120 has a high DC current gain (hFE) of 2500 (Typ) at IC = 4.0 A, making it highly efficient in amplification tasks.
  • Low Collector-Emitter Saturation Voltage: It features a low VCE(sat) of 2.0 Vdc (Max) at IC = 3.0 A, which reduces power loss and enhances circuit efficiency.
  • Monolithic Construction: The transistor has a monolithic construction with built-in base-emitter shunt resistors, improving its reliability and performance.
  • Thermal Stability: It has good thermal stability with a thermal resistance, junction-to-case (RθJC) of 1.92 °C/W, ensuring stable operation over a wide temperature range.
  • Pb-Free Packages: Pb-free packages are available, aligning with environmental and regulatory requirements.

Applications

  • General-Purpose Amplifiers: The TIP120 is suitable for general-purpose amplifier applications due to its high current gain and low saturation voltage.
  • Low-Speed Switching: It is designed for low-speed switching applications, making it ideal for controlling motors, solenoids, and LEDs.
  • Industrial Automation: Its robustness and thermal stability make it a good choice for industrial automation systems and power management frameworks.
  • Audio Amplifiers: The TIP120 can be used in audio amplifiers to achieve low distortion and clear sound output.
  • Motor Speed Control: It is effective in motor speed control, balancing speed and torque efficiently in various motor systems.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the TIP120 transistor?

    The collector-emitter voltage (VCEO) of the TIP120 transistor is 60 Vdc (Min).

  2. What is the continuous collector current (IC) of the TIP120 transistor?

    The continuous collector current (IC) of the TIP120 transistor is 5.0 A.

  3. What is the peak collector current (IC) of the TIP120 transistor?

    The peak collector current (IC) of the TIP120 transistor is 8.0 A.

  4. What is the DC current gain (hFE) of the TIP120 transistor?

    The DC current gain (hFE) of the TIP120 transistor is 2500 (Typ) at IC = 4.0 A.

  5. What is the collector-emitter saturation voltage (VCE(sat)) of the TIP120 transistor?

    The collector-emitter saturation voltage (VCE(sat)) of the TIP120 transistor is 2.0 Vdc (Max) at IC = 3.0 A, IB = 12 mA.

  6. What is the operating and storage junction temperature range of the TIP120 transistor?

    The operating and storage junction temperature range of the TIP120 transistor is –65 to +150 °C.

  7. What type of package does the TIP120 transistor use?

    The TIP120 transistor uses a TO-220 package.

  8. Is the TIP120 transistor Pb-free?
  9. What are some common applications of the TIP120 transistor?

    The TIP120 transistor is commonly used in general-purpose amplifiers, low-speed switching applications, industrial automation, audio amplifiers, and motor speed control.

  10. Why is the TIP120 transistor suitable for motor control applications?

    The TIP120 transistor is suitable for motor control applications due to its high current capacity, low saturation voltage, and good thermal stability, which allow it to handle high-power functions efficiently).

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:4V @ 20mA, 5A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 3A, 3V
Power - Max:- 
Frequency - Transition:4MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
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Same Series
TIP121
TIP121
TRANS NPN DARL 80V 5A TO220AB
TIP126
TIP126
TRANS PNP DARL 80V 5A TO220-3
TIP125
TIP125
TRANS PNP DARL 60V 5A TO220

Similar Products

Part Number TIP120 TIP121 TIP150 TIP140 TIP126 TIP122 TIP127 TIP120G TIP125 TIP130 TIP100 TIP110
Manufacturer NTE Electronics, Inc Fairchild Semiconductor NTE Electronics, Inc NTE Electronics, Inc NTE Electronics, Inc NTE Electronics, Inc NTE Electronics, Inc onsemi STMicroelectronics Central Semiconductor Corp Harris Corporation NTE Electronics, Inc
Product Status Active Active Active Active Active Active Active Active Active Obsolete Obsolete Active
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington NPN PNP - Darlington NPN - Darlington PNP - Darlington NPN - Darlington PNP - Darlington - NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) - 5 A 10 A 10 A 5 A 5 A 5 A 5 A 5 A - 8 A -
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 300 V 60 V 80 V 100 V 100 V 60 V 60 V - 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 4V @ 20mA, 5A 4V @ 20mA, 5A 2V @ 250mA, 5A - 4V @ 20mA, 5A 4V @ 20mA, 5A 4V @ 20mA, 5A 4V @ 20mA, 5A 4V @ 20mA, 5A - 2.5V @ 80mA, 8A 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max) 500µA 500µA 250µA - 500µA 500µA 500µA 500µA 500µA - 50µA 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A, 3V 1000 @ 3A, 3V 150 @ 2.5A, 5V 1000 @ 5A, 4V 1000 @ 3A, 3V 1000 @ 3A, 3V 1000 @ 3A, 3V 1000 @ 3A, 3V 1000 @ 3A, 3V - 1000 @ 3A, 4V 1000 @ 1A, 4V
Power - Max - 2 W 80 W 125 W 65 W 2 W 2 W 2 W 2 W - 80 W -
Frequency - Transition 4MHz - - - 4MHz - - - - - 4MHz 25MHz
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) - -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-218-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220AB TO-220 TO-218 TO-220-3 TO-220 TO-220 TO-220 TO-220 TO-220-3 TO-220-3 TO-220-3

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