Overview
The TIP120G is a medium-power Darlington transistor produced by onsemi. It is part of the TIP120 series, which includes complementary silicon transistors designed for general-purpose amplifier and low-speed switching applications. This NPN transistor is known for its high DC current gain and low collector-emitter saturation voltage, making it suitable for a variety of electronic circuits.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Transistor Type | NPN - Darlington | |
Collector-Emitter Voltage (VCEO) | 60 | Vdc |
Collector Current (IC) | 5 | A |
Collector Peak Current (ICM) | 8 | A |
Base Current (IB) | 0.12 | A |
Total Power Dissipation at TC ≤ 25°C | 65 | W |
Total Power Dissipation at TA ≤ 25°C | 2 | W |
Thermal Resistance, Junction-to-Case (RthJC) | 1.92 | °C/W |
Thermal Resistance, Junction-to-Ambient (RthJA) | 62.5 | °C/W |
Maximum Operating Junction Temperature (TJ) | 150 | °C |
Storage Temperature Range (Tstg) | -65 to 150 | °C |
Collector-Emitter Saturation Voltage (VCE(sat)) | 2.0 (at IC = 3 A, IB = 12 mA) | Vdc |
Base-Emitter On Voltage (VBE(on)) | 2.5 (at IC = 3 A, VCE = 3 V) | Vdc |
DC Current Gain (hFE) | 1000 (at IC = 0.5 A, VCE = 3 V) |
Key Features
- High DC current gain (hFE = 1000 at IC = 0.5 A, VCE = 3 V)
- Low collector-emitter saturation voltage (VCE(sat) = 2.0 V at IC = 3 A, IB = 12 mA)
- Monolithic construction with built-in base-emitter shunt resistors
- Pb-free packages available
- High collector-emitter sustaining voltage (VCEO(sus) = 60 Vdc)
- Wide operating temperature range (-65°C to 150°C)
Applications
The TIP120G is suitable for various applications including general-purpose amplifiers, low-speed switching circuits, and power amplifiers. It is often used in automotive, industrial, and consumer electronics where high current gain and low saturation voltage are required.
Q & A
- What is the transistor type of the TIP120G?
The TIP120G is an NPN Darlington transistor. - What is the maximum collector current of the TIP120G?
The maximum collector current (IC) is 5 A. - What is the maximum collector-emitter voltage of the TIP120G?
The maximum collector-emitter voltage (VCEO) is 60 Vdc. - What is the thermal resistance from junction to case for the TIP120G?
The thermal resistance from junction to case (RthJC) is 1.92 °C/W. - What is the maximum operating junction temperature for the TIP120G?
The maximum operating junction temperature (TJ) is 150 °C. - Is the TIP120G available in Pb-free packages?
Yes, Pb-free packages are available for the TIP120G. - What is the typical DC current gain of the TIP120G?
The typical DC current gain (hFE) is 1000 at IC = 0.5 A, VCE = 3 V. - What is the collector-emitter saturation voltage of the TIP120G?
The collector-emitter saturation voltage (VCE(sat)) is 2.0 V at IC = 3 A, IB = 12 mA. - What are some common applications of the TIP120G?
The TIP120G is commonly used in general-purpose amplifiers, low-speed switching circuits, and power amplifiers in automotive, industrial, and consumer electronics. - What is the storage temperature range for the TIP120G?
The storage temperature range (Tstg) is -65°C to 150°C.