TIP122G
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onsemi TIP122G

Manufacturer No:
TIP122G
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN DARL 100V 5A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP122G is a silicon NPN Darlington power transistor manufactured by onsemi. It is designed for general-purpose amplifier and low-speed switching applications. This transistor is part of the TIP120, TIP121, and TIP122 series, which are NPN devices, and have complementary PNP devices in the TIP125, TIP126, and TIP127 series. The TIP122G is housed in a compact TO-220 AB package and is known for its high DC current gain and ability to handle high current loads.

Key Specifications

Specification Value
Transistor Type NPN Darlington
Package Type TO-220 AB
Collector-Emitter Voltage (VCE) 100 V
Collector-Base Voltage (VCB) 100 V
Emitter-Base Voltage (VEBO) 5 V
Continuous Collector Current (IC) 5 A
Peak Collector Current 8 A
Base Current (IB) 120 mA
DC Current Gain (hFE) 1000 (typ) @ IC = 3 A, VCE = 3 V
Collector-Emitter Saturation Voltage (VCE(sat)) 2.0 V (Max) @ IC = 3 A, 4.0 V (Max) @ IC = 5 A
Power Dissipation 2 W
Storage & Operating Temperature -65 to +150 °C
Max Junction Temperature (Tj) 150 °C

Key Features

  • High DC Current Gain (hFE) of 1000 (typ) @ IC = 3 A, VCE = 3 V
  • Low Collector-Emitter Saturation Voltage (VCE(sat)) of 2.0 V (Max) @ IC = 3 A, 4.0 V (Max) @ IC = 5 A
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • Compact TO-220 AB Package
  • Pb-Free Packages Available
  • Minimal Saturation Voltage, reducing power loss and heat generation
  • Easy to control with a low Base-Emitter Voltage of 5 V and a base current of 120 mA
  • Extensive Safe Operating Area ensuring stable performance under varying conditions

Applications

  • Switching high current loads up to 5 A
  • Medium Power Switching Applications
  • High Amplification Requirements
  • Speed Control of Motors
  • Inverter and Rectifier Circuits
  • Driving Audio Amplifiers and Managing Devices with Switching Loads
  • Controlling Solenoids and LEDs

Q & A

  1. What is the TIP122G transistor used for?

    The TIP122G is used for general-purpose amplifier and low-speed switching applications, particularly for controlling high current loads.

  2. What is the collector-emitter voltage rating of the TIP122G?

    The collector-emitter voltage (VCE) rating is 100 V.

  3. What is the continuous collector current rating of the TIP122G?

    The continuous collector current (IC) rating is 5 A.

  4. What is the peak collector current of the TIP122G?

    The peak collector current is 8 A.

  5. What is the DC current gain (hFE) of the TIP122G?

    The DC current gain (hFE) is typically 1000 @ IC = 3 A, VCE = 3 V.

  6. What package type is the TIP122G available in?

    The TIP122G is available in a TO-220 AB package.

  7. Can the TIP122G be controlled by a logic device?

    Yes, the TIP122G can be controlled by a logic device due to its low Base-Emitter Voltage of 5 V and base current of 120 mA.

  8. What are some common applications of the TIP122G?

    Common applications include switching high current loads, medium power switching, high amplification requirements, speed control of motors, and inverter and rectifier circuits.

  9. What is the maximum junction temperature of the TIP122G?

    The maximum junction temperature (Tj) is 150 °C.

  10. Is the TIP122G available in Pb-Free packages?

    Yes, Pb-Free packages are available for the TIP122G.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:4V @ 20mA, 5A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 3A, 3V
Power - Max:2 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Similar Products

Part Number TIP122G TIP127G TIP126G TIP125G TIP142G TIP132G TIP102G TIP112G TIP120G TIP121G TIP122
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi NTE Electronics, Inc
Product Status Active Active Obsolete Obsolete Active Obsolete Active Active Active Active Active
Transistor Type NPN - Darlington PNP - Darlington PNP - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 5 A 5 A 5 A 5 A 10 A 8 A 8 A 2 A 5 A 5 A 5 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 80 V 60 V 100 V 100 V 100 V 100 V 60 V 80 V 100 V
Vce Saturation (Max) @ Ib, Ic 4V @ 20mA, 5A 4V @ 20mA, 5A 4V @ 20mA, 5A 4V @ 20mA, 5A 3V @ 40mA, 10A 3V @ 30mA, 6A 2.5V @ 80mA, 8A 2.5V @ 8mA, 2A 4V @ 20mA, 5A 4V @ 20mA, 5A 4V @ 20mA, 5A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 2mA 500µA 50µA 2mA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A, 3V 1000 @ 3A, 3V 1000 @ 3A, 3V 1000 @ 3A, 3V 1000 @ 5A, 4V 1000 @ 4A, 4V 1000 @ 3A, 4V 1000 @ 1A, 4V 1000 @ 3A, 3V 1000 @ 3A, 3V 1000 @ 3A, 3V
Power - Max 2 W 2 W 2 W 2 W 125 W 2 W 2 W 2 W 2 W 2 W 2 W
Frequency - Transition - - - - - - - - - - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-247-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-247-3 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220

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