TIP102G
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onsemi TIP102G

Manufacturer No:
TIP102G
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN DARL 100V 8A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi TIP102G is a Darlington Bipolar Power Transistor designed for general-purpose amplifier and low-speed switching applications. It is part of the TIP100 series, which includes complementary devices such as the TIP100, TIP101, TIP105, TIP106, and TIP107. The TIP102G is an NPN transistor, known for its high DC current gain and low collector-emitter saturation voltage, making it suitable for a variety of electronic circuits.

Key Specifications

ParameterValueUnit
Transistor PolarityNPN
Collector-Emitter Voltage Max100V
Continuous Collector Current8A
Power Dissipation80W
No. of Pins3
Transistor MountingThrough Hole
Transistor Case StyleTO-220
DC Current Gain hFE Min200
Operating Temperature Max150°C

Key Features

  • High DC Current Gain: hFE = 2500 (typ) @ IC = 4.0 mA DC.
  • Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0 V DC (Max) @ IC = 3.0 A DC, VCE(sat) = 2.5 V DC (Max) @ IC = 8.0 A DC.
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors.
  • Pb-Free Packages are Available and RoHS Compliant.
  • Compact TO-220 AB Package.

Applications

The TIP102G is designed for general-purpose amplifier and low-speed switching applications. It is suitable for use in various electronic circuits, including power supplies, motor control systems, and other applications where high current gain and low saturation voltage are required.

Q & A

  1. What is the transistor polarity of the TIP102G?
    The TIP102G is an NPN transistor.
  2. What is the maximum collector-emitter voltage of the TIP102G?
    The maximum collector-emitter voltage is 100 V.
  3. What is the continuous collector current of the TIP102G?
    The continuous collector current is 8 A.
  4. What is the power dissipation of the TIP102G?
    The power dissipation is 80 W.
  5. What is the DC current gain (hFE) of the TIP102G?
    The minimum DC current gain (hFE) is 200.
  6. What is the operating temperature range of the TIP102G?
    The operating temperature range is up to 150°C.
  7. Is the TIP102G RoHS compliant?
    Yes, the TIP102G is RoHS compliant.
  8. What is the package type of the TIP102G?
    The TIP102G comes in a TO-220 AB package.
  9. What are some typical applications of the TIP102G?
    The TIP102G is used in general-purpose amplifier and low-speed switching applications, including power supplies and motor control systems.
  10. Does the TIP102G have built-in base-emitter shunt resistors?
    Yes, the TIP102G has monolithic construction with built-in base-emitter shunt resistors.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 80mA, 8A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 3A, 4V
Power - Max:2 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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TIP100G
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TIP101G
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Similar Products

Part Number TIP102G TIP122G TIP105G TIP142G TIP107G TIP112G TIP106G TIP132G TIP100G TIP101G TIP102
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi NTE Electronics, Inc
Product Status Active Active Active Active Active Active Obsolete Obsolete Obsolete Obsolete Active
Transistor Type NPN - Darlington NPN - Darlington - NPN - Darlington PNP - Darlington NPN - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 8 A 5 A - 10 A 8 A 2 A 8 A 8 A 8 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V - 100 V 100 V 100 V 80 V 100 V 60 V 80 V 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 80mA, 8A 4V @ 20mA, 5A - 3V @ 40mA, 10A 2.5V @ 80mA, 8A 2.5V @ 8mA, 2A 2.5V @ 80mA, 8A 3V @ 30mA, 6A 2.5V @ 80mA, 8A 2.5V @ 80mA, 8A 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max) 50µA 500µA - 2mA 50µA 2mA 50µA 500µA 50µA 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A, 4V 1000 @ 3A, 3V - 1000 @ 5A, 4V 1000 @ 3A, 4V 1000 @ 1A, 4V 1000 @ 3A, 4V 1000 @ 4A, 4V 1000 @ 3A, 4V 1000 @ 3A, 4V 1000 @ 3A, 4V
Power - Max 2 W 2 W - 125 W 2 W 2 W 2 W 2 W 2 W 2 W 2 W
Frequency - Transition - - - - - - - - - - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) - -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole - Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 - TO-247-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 - TO-247-3 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220

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