TIP107G
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onsemi TIP107G

Manufacturer No:
TIP107G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP DARL 100V 8A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP107G, produced by onsemi, is an 8.0 A, 100 V PNP Darlington Power Bipolar Junction Transistor. This transistor is designed for general-purpose amplifier and low-speed switching applications. It is part of a family of complementary devices that include the TIP100, TIP101, TIP102 (NPN) and TIP105, TIP106, TIP107 (PNP).

Key Specifications

Parameter Value Unit
Type PNP Darlington Power Bipolar Junction Transistor
Collector-Emitter Voltage (VCE) -100 V
Collector-Base Voltage (VCB) -100 V
Emitter-Base Voltage (VEB) -5 V
Collector Current (IC) -8 A
Pulse Collector Current (ICP) -15 A
Base Current (IB) -1 A
Collector Power Dissipation (PC) 80 (TO-220/TO-263), 41 (TO-252), 10 (TO-126/TO-126S) W
Junction Temperature (TJ) -65 to +150 °C
Storage Temperature (TSTG) -65 to +150 °C
DC Current Gain (hFE) 1000 to 20000
Collector-Emitter Saturation Voltage (VCE(SAT)) 2.0 (IC=3A), 2.5 (IC=8A) V

Key Features

  • High DC Current Gain: The TIP107G has a high DC current gain (hFE) ranging from 1000 to 20000.
  • Low Collector-Emitter Saturation Voltage: The transistor features a low VCE(SAT) of 2.0 V at IC=3 A and 2.5 V at IC=8 A.
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors: This design enhances the transistor's performance and reliability.
  • Compact TO-220 Package: Available in various package types including TO-220, TO-220F, TO-252, TO-263, and TO-126.
  • Pb-Free and Halogen-Free Packages: Environmentally friendly packaging options are available.

Applications

The TIP107G is suitable for general-purpose amplifier and low-speed switching applications. It is commonly used in various electronic circuits where high current gain and low saturation voltage are required.

Q & A

  1. What is the type of the TIP107G transistor?

    The TIP107G is a PNP Darlington Power Bipolar Junction Transistor.

  2. What is the maximum collector current of the TIP107G?

    The maximum collector current is 8 A).

  3. What is the collector-emitter voltage rating of the TIP107G?

    The collector-emitter voltage rating is -100 V).

  4. What are the typical applications of the TIP107G?

    The TIP107G is used in general-purpose amplifier and low-speed switching applications).

  5. What is the DC current gain range of the TIP107G?

    The DC current gain (hFE) ranges from 1000 to 20000).

  6. What are the available package types for the TIP107G?

    The TIP107G is available in TO-220, TO-220F, TO-252, TO-263, and TO-126 packages).

  7. Is the TIP107G available in Pb-Free and Halogen-Free packages?
  8. What is the maximum junction temperature for the TIP107G?

    The maximum junction temperature is +150°C).

  9. What is the storage temperature range for the TIP107G?

    The storage temperature range is -65 to +150°C).

  10. What are some equivalent transistors for the TIP107G?

    Some equivalent transistors include 2N6042, 2N6042G, BD544C, BD546C, among others).

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 80mA, 8A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 3A, 4V
Power - Max:2 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Same Series
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TRANS NPN DARL 100V 8A TO220
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TIP107G
TIP107G
TRANS PNP DARL 100V 8A TO220
TIP100G
TIP100G
TRANS NPN DARL 60V 8A TO220
TIP101G
TIP101G
TRANS NPN DARL 80V 8A TO220
TIP106G
TIP106G
TRANS PNP DARL 80V 8A TO220

Similar Products

Part Number TIP107G TIP127G TIP117G TIP147G TIP137G TIP100G TIP101G TIP102G TIP105G TIP106G TIP107
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi NTE Electronics, Inc
Product Status Active Active Active Active Active Obsolete Obsolete Active Active Obsolete Active
Transistor Type PNP - Darlington PNP - Darlington PNP - Darlington PNP - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington - PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 8 A 5 A 2 A 10 A 8 A 8 A 8 A 8 A - 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V 60 V 80 V 100 V - 80 V 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 80mA, 8A 4V @ 20mA, 5A 2.5V @ 8mA, 2A 3V @ 40mA, 10A 4V @ 30mA, 6A 2.5V @ 80mA, 8A 2.5V @ 80mA, 8A 2.5V @ 80mA, 8A - 2.5V @ 80mA, 8A 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max) 50µA 500µA 2mA 2mA 500µA 50µA 50µA 50µA - 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A, 4V 1000 @ 3A, 3V 1000 @ 1A, 4V 1000 @ 5A, 4V 1000 @ 4A, 4V 1000 @ 3A, 4V 1000 @ 3A, 4V 1000 @ 3A, 4V - 1000 @ 3A, 4V 1000 @ 3A, 4V
Power - Max 2 W 2 W 2 W 125 W 2 W 2 W 2 W 2 W - 2 W 2 W
Frequency - Transition - - - - - - - - - - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) - -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole - Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-247-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 - TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-247-3 TO-220 TO-220 TO-220 TO-220 - TO-220 TO-220

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