TIP127G
  • Share:

onsemi TIP127G

Manufacturer No:
TIP127G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP DARL 100V 5A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP127G is a PNP Epitaxial Darlington Transistor manufactured by onsemi. This transistor is part of the TIP125, TIP126, and TIP127 series, designed for general-purpose amplifier and low-speed switching applications. It is known for its high DC current gain and low collector-emitter saturation voltage, making it suitable for a variety of electronic circuits.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) -100 V
Collector-Emitter Voltage (VCEO) -100 V
Emitter-Base Voltage (VEBO) -5 V
Collector Current (IC) -5 A
Peak Collector Current (ICM) -8 A
Base Current (IB) -120 mA
Junction Temperature (TJ) 150 °C
Storage Temperature Range (TSTG) -65 to 150 °C
Total Power Dissipation at TC = 25°C (PD) 65 W
DC Current Gain (hFE) 1000
Collector-Emitter Saturation Voltage (VCE(sat)) -2 to -4 V
Base-Emitter On Voltage (VBE(on)) -2.5 V

Key Features

  • High DC current gain (hFE = 1000 at IC = 0.5 A and IC = 3 A)
  • Low collector-emitter saturation voltage (VCE(sat) = 2.0 V at IC = 3 A, IB = 12 mA and VCE(sat) = 4.0 V at IC = 5 A, IB = 20 mA)
  • High collector-emitter sustaining voltage (VCEO(sus) = -100 V)
  • Low base-emitter on voltage (VBE(on) = -2.5 V)
  • High collector current capability (IC = -5 A, ICM = -8 A)
  • Wide operating temperature range (TJ = 150 °C, TSTG = -65 to 150 °C)

Applications

The TIP127G is suitable for various applications including:

  • General-purpose amplifiers
  • Low-speed switching circuits
  • Power amplifiers and drivers
  • Automotive and industrial control systems
  • Relay and solenoid drivers

Q & A

  1. What is the collector-emitter voltage rating of the TIP127G?

    The collector-emitter voltage (VCEO) rating of the TIP127G is -100 V.

  2. What is the maximum collector current of the TIP127G?

    The maximum continuous collector current (IC) is -5 A, and the peak collector current (ICM) is -8 A.

  3. What is the DC current gain of the TIP127G?

    The DC current gain (hFE) of the TIP127G is 1000 at IC = 0.5 A and IC = 3 A.

  4. What is the collector-emitter saturation voltage of the TIP127G?

    The collector-emitter saturation voltage (VCE(sat)) is -2.0 V at IC = 3 A, IB = 12 mA and -4.0 V at IC = 5 A, IB = 20 mA.

  5. What is the base-emitter on voltage of the TIP127G?

    The base-emitter on voltage (VBE(on)) is -2.5 V.

  6. What is the maximum junction temperature of the TIP127G?

    The maximum junction temperature (TJ) is 150 °C.

  7. What is the storage temperature range of the TIP127G?

    The storage temperature range (TSTG) is -65 to 150 °C.

  8. What are some common applications of the TIP127G?

    The TIP127G is commonly used in general-purpose amplifiers, low-speed switching circuits, power amplifiers, and drivers, as well as in automotive and industrial control systems.

  9. What is the total power dissipation of the TIP127G at TC = 25°C?

    The total power dissipation (PD) at TC = 25°C is 65 W.

  10. Is the TIP127G suitable for high-frequency applications?

    The TIP127G is not specifically designed for high-frequency applications but is more suited for low-speed switching and general-purpose amplification.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:4V @ 20mA, 5A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 3A, 3V
Power - Max:2 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
0 Remaining View Similar

In Stock

$0.93
1,044

Please send RFQ , we will respond immediately.

Similar Products

Part Number TIP127G TIP147G TIP137G TIP107G TIP117G TIP120G TIP121G TIP122G TIP125G TIP126G TIP127
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi NTE Electronics, Inc
Product Status Active Active Active Active Active Active Active Active Obsolete Obsolete Active
Transistor Type PNP - Darlington PNP - Darlington PNP - Darlington PNP - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington PNP - Darlington PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 5 A 10 A 8 A 8 A 2 A 5 A 5 A 5 A 5 A 5 A 5 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V 60 V 80 V 100 V 60 V 80 V 100 V
Vce Saturation (Max) @ Ib, Ic 4V @ 20mA, 5A 3V @ 40mA, 10A 4V @ 30mA, 6A 2.5V @ 80mA, 8A 2.5V @ 8mA, 2A 4V @ 20mA, 5A 4V @ 20mA, 5A 4V @ 20mA, 5A 4V @ 20mA, 5A 4V @ 20mA, 5A 4V @ 20mA, 5A
Current - Collector Cutoff (Max) 500µA 2mA 500µA 50µA 2mA 500µA 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A, 3V 1000 @ 5A, 4V 1000 @ 4A, 4V 1000 @ 3A, 4V 1000 @ 1A, 4V 1000 @ 3A, 3V 1000 @ 3A, 3V 1000 @ 3A, 3V 1000 @ 3A, 3V 1000 @ 3A, 3V 1000 @ 3A, 3V
Power - Max 2 W 125 W 2 W 2 W 2 W 2 W 2 W 2 W 2 W 2 W 2 W
Frequency - Transition - - - - - - - - - - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-247-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-247-3 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220

Related Product By Categories

PZT2907AT1G
PZT2907AT1G
onsemi
TRANS PNP 60V 0.6A SOT223
TIP35CW
TIP35CW
STMicroelectronics
TRANS NPN 100V 25A TO247-3
MMBT3904-7-F
MMBT3904-7-F
Diodes Incorporated
TRANS NPN 40V 0.2A SOT23-3
BFS20W,115
BFS20W,115
Nexperia USA Inc.
TRANS NPN 20V 0.025A SOT323
PBHV9040T,215
PBHV9040T,215
Nexperia USA Inc.
TRANS PNP 400V 0.25A TO236AB
BC857BW_R1_00001
BC857BW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
SMMBTA56LT1G
SMMBTA56LT1G
onsemi
TRANS PNP 80V 0.5A SOT23-3
BC807-40/6215
BC807-40/6215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCV46QTA
BCV46QTA
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT23
BC847BW-AQ
BC847BW-AQ
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
TIP32CTSTU
TIP32CTSTU
onsemi
TRANS PNP 100V 3A TO220-3
STF826
STF826
STMicroelectronics
TRANS PNP 30V 3A SOT89-3

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE