TIP117G
  • Share:

onsemi TIP117G

Manufacturer No:
TIP117G
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS PNP DARL 100V 2A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP117G is a PNP Darlington transistor manufactured by onsemi. It is part of the TIP115, TIP116, and TIP117 series, designed for general-purpose amplifier and low-speed switching applications. This transistor is known for its high DC current gain and low collector-emitter saturation voltage, making it suitable for a variety of electronic circuits.

Key Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)100Vdc
Collector Current (IC)2.0Adc
Base Current (IB)50mAdc
Total Power Dissipation (PD) @ TC = 25°C50W
Thermal Resistance, Junction-to-Case (RθJC)2.5°C/W
Thermal Resistance, Junction-to-Ambient (RθJA)62.5°C/W
DC Current Gain (hFE) @ IC = 1.0 Adc2500 (Typ)
Collector-Emitter Saturation Voltage (VCE(sat)) @ IC = 2.0 Adc2.5Vdc
Operating and Storage Junction Temperature-65 to +150°C

Key Features

  • High DC current gain (hFE = 2500 Typ @ IC = 1.0 Adc)
  • Low collector-emitter saturation voltage (VCE(sat) = 2.5 Vdc Max @ IC = 2.0 Adc)
  • Monolithic construction with built-in base-emitter shunt resistors
  • Pb-free packages available
  • High collector-emitter sustaining voltage (VCEO(sus) = 100 Vdc Min)

Applications

The TIP117G is suitable for various applications including general-purpose amplifiers, low-speed switching circuits, and power management in electronic devices. It is particularly useful in scenarios where high current gain and low saturation voltage are required.

Q & A

  1. What is the collector-emitter voltage rating of the TIP117G? The collector-emitter voltage rating of the TIP117G is 100 Vdc.
  2. What is the maximum collector current for the TIP117G? The maximum collector current for the TIP117G is 2.0 Adc.
  3. What is the typical DC current gain of the TIP117G? The typical DC current gain (hFE) of the TIP117G is 2500 at IC = 1.0 Adc.
  4. What is the collector-emitter saturation voltage of the TIP117G? The collector-emitter saturation voltage (VCE(sat)) of the TIP117G is 2.5 Vdc Max at IC = 2.0 Adc.
  5. What is the thermal resistance, junction-to-case, of the TIP117G? The thermal resistance, junction-to-case (RθJC), of the TIP117G is 2.5 °C/W.
  6. Is the TIP117G available in Pb-free packages? Yes, the TIP117G is available in Pb-free packages.
  7. What are the operating and storage temperature ranges for the TIP117G? The operating and storage temperature ranges for the TIP117G are -65 to +150 °C.
  8. What type of construction does the TIP117G have? The TIP117G has monolithic construction with built-in base-emitter shunt resistors.
  9. What are some common applications for the TIP117G? The TIP117G is commonly used in general-purpose amplifiers and low-speed switching circuits.
  10. What is the maximum base current for the TIP117G? The maximum base current for the TIP117G is 50 mAdc.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 8mA, 2A
Current - Collector Cutoff (Max):2mA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 1A, 4V
Power - Max:2 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
0 Remaining View Similar

In Stock

$0.90
909

Please send RFQ , we will respond immediately.

Same Series
TIP111
TIP111
TRANS NPN DARL 80V 2A TO220-3
TIP117G
TIP117G
TRANS PNP DARL 100V 2A TO220
TIP111G
TIP111G
TRANS NPN DARL 80V 2A TO220
TIP115G
TIP115G
TRANS PNP DARL 60V 2A TO220
TIP110G
TIP110G
TRANS NPN DARL 60V 2A TO220
TIP112G
TIP112G
TRANS NPN DARL 100V 2A TO220
TIP116G
TIP116G
TRANS PNP DARL 80V 2A TO220

Similar Products

Part Number TIP117G TIP127G TIP147G TIP137G TIP107G TIP110G TIP111G TIP112G TIP115G TIP116G TIP117
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor
Product Status Active Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type PNP - Darlington PNP - Darlington PNP - Darlington PNP - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington PNP - Darlington PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 2 A 5 A 10 A 8 A 8 A 2 A 2 A 2 A 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V 60 V 80 V 100 V 60 V 80 V 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A 4V @ 20mA, 5A 3V @ 40mA, 10A 4V @ 30mA, 6A 2.5V @ 80mA, 8A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max) 2mA 500µA 2mA 500µA 50µA 2mA 2mA 2mA 2mA 2mA 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V 1000 @ 3A, 3V 1000 @ 5A, 4V 1000 @ 4A, 4V 1000 @ 3A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V
Power - Max 2 W 2 W 125 W 2 W 2 W 2 W 2 W 2 W 2 W 2 W 2 W
Frequency - Transition - - - - - - - - - - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-247-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-247-3 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220-3

Related Product By Categories

BCP56-16/DG/B2115
BCP56-16/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MMBT3906LT1HTSA1
MMBT3906LT1HTSA1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23
NSS60200LT1G
NSS60200LT1G
onsemi
TRANS PNP 60V 2A SOT23-3
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC846B215
BC846B215
NXP USA Inc.
0.1A, 65V, NPN, TO 236AB
BC856AW-7-F
BC856AW-7-F
Diodes Incorporated
TRANS PNP 65V 0.1A SOT323
BC846AQB-QZ
BC846AQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX5616H6327XTSA1
BCX5616H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
TIP30CTU
TIP30CTU
onsemi
TRANS PNP 100V 1A TO220-3
BC857CWE6327BTSA1
BC857CWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BC859CLT1
BC859CLT1
onsemi
TRANS PNP 30V 0.1A SOT23-3
TIP31ATU_F129
TIP31ATU_F129
onsemi
TRANS NPN 60V 3A TO220-3

Related Product By Brand

MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
onsemi
MOSFET P-CH 60V 11A/61A DPAK
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4