Overview
The TIP112G is a medium-power NPN epitaxial silicon Darlington transistor manufactured by onsemi. It is designed for general-purpose amplifier and low-speed switching applications. This transistor is part of the TIP110, TIP111, and TIP112 series, which are known for their high DC current gain and robust electrical characteristics. The TIP112G is packaged in a TO-220 3-lead case, making it suitable for a variety of power and control circuits.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Collector-Emitter Sustaining Voltage (VCEO(sus)) | 100 | Vdc |
| Collector Current (DC) (IC) | 2 | A |
| Collector Current (Pulse) (ICP) | 4 | A |
| Base Current (DC) (IB) | 50 | mA |
| DC Current Gain (hFE) | 1000 @ IC = 1 A, 500 @ IC = 2 A | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.5 V @ IC = 2 A, IB = 8 mA | V |
| Base-Emitter On Voltage (VBE(on)) | 2.8 V @ IC = 2 A | V |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature Range (TSTG) | -65 to 150 | °C |
Key Features
- High DC current gain (hFE = 2500 typical @ IC = 1.0 A)
- Low collector-emitter saturation voltage (VCE(sat) = 2.5 V max @ IC = 2.0 A, IB = 8 mA)
- Monolithic construction with built-in base-emitter shunt resistors
- Pb-free packages available
- High collector-emitter sustaining voltage (VCEO(sus) = 100 Vdc min)
Applications
The TIP112G is suitable for various applications including general-purpose amplifiers, low-speed switching circuits, and power control circuits. It is particularly useful in scenarios where high current gain and robust electrical performance are required.
Q & A
- What is the collector-emitter voltage (VCEO) of the TIP112G? The collector-emitter voltage (VCEO) of the TIP112G is 100 V.
- What is the typical DC current gain (hFE) of the TIP112G? The typical DC current gain (hFE) of the TIP112G is 1000 @ IC = 1 A and 500 @ IC = 2 A.
- What is the maximum collector-emitter saturation voltage (VCE(sat)) of the TIP112G? The maximum collector-emitter saturation voltage (VCE(sat)) of the TIP112G is 2.5 V @ IC = 2 A, IB = 8 mA.
- What is the junction temperature (TJ) of the TIP112G? The junction temperature (TJ) of the TIP112G is 150°C.
- What is the storage temperature range (TSTG) of the TIP112G? The storage temperature range (TSTG) of the TIP112G is -65 to 150°C.
- What type of package does the TIP112G come in? The TIP112G comes in a TO-220 3-lead package.
- Is the TIP112G Pb-free? Yes, Pb-free packages are available for the TIP112G.
- What are some common applications of the TIP112G? The TIP112G is commonly used in general-purpose amplifiers, low-speed switching circuits, and power control circuits.
- What is the maximum collector current (IC) of the TIP112G? The maximum collector current (IC) of the TIP112G is 2 A.
- What is the maximum base current (IB) of the TIP112G? The maximum base current (IB) of the TIP112G is 50 mA.
