TIP115G
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onsemi TIP115G

Manufacturer No:
TIP115G
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS PNP DARL 60V 2A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP115G is a Darlington power transistor produced by onsemi. It is part of the TIP115, TIP116, and TIP117 series, which are designed for general-purpose amplifier and low-speed switching applications. This PNP transistor is known for its high DC current gain and low collector-emitter saturation voltage, making it suitable for a variety of power management and control circuits.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 Vdc
Collector-Base Voltage (VCB) 60 Vdc
Emitter-Base Voltage (VEB) 5.0 Vdc
Collector Current (IC) - Continuous 2.0 A
Collector Current (IC) - Peak 4.0 A
Base Current (IB) 50 mA
Total Power Dissipation (PD) @ TC = 25°C 50 W
Thermal Resistance, Junction-to-Case (RθJC) 2.5 °C/W
Thermal Resistance, Junction-to-Ambient (RθJA) 62.5 °C/W
DC Current Gain (hFE) @ IC = 1.0 A 1000
Collector-Emitter Saturation Voltage (VCE(sat)) @ IC = 2.0 A 2.5 Vdc

Key Features

  • High DC Current Gain: hFE = 1000 (Typ) @ IC = 1.0 A, making it suitable for high-current applications.
  • Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 A, reducing power losses.
  • Monolithic Construction with Built-in Base-Emitter Shunt Resistors: Enhances stability and simplifies circuit design.
  • Pb-Free Packages Available: Compliant with lead-free soldering requirements.
  • High Collector-Emitter Sustaining Voltage: VCEO(sus) = 60 Vdc (Min), ensuring robust performance under various operating conditions.

Applications

  • General-Purpose Amplifiers: Suitable for a wide range of amplifier circuits due to its high current gain and low saturation voltage.
  • Low-Speed Switching: Ideal for applications requiring reliable switching performance at lower frequencies.
  • Power Management Circuits: Used in power supplies, motor control, and other power management systems.
  • Automotive and Industrial Control Systems: Robust enough for use in harsh environments.

Q & A

  1. What is the collector-emitter voltage rating of the TIP115G transistor?

    The collector-emitter voltage (VCEO) rating is 60 Vdc.

  2. What is the typical DC current gain of the TIP115G transistor?

    The typical DC current gain (hFE) is 1000 at IC = 1.0 A.

  3. What is the maximum collector current for the TIP115G transistor?

    The maximum continuous collector current (IC) is 2.0 A, and the peak collector current is 4.0 A.

  4. What is the thermal resistance from junction to case for the TIP115G transistor?

    The thermal resistance from junction to case (RθJC) is 2.5 °C/W.

  5. Is the TIP115G transistor available in Pb-Free packages?
  6. What are the typical applications of the TIP115G transistor?

    The TIP115G transistor is typically used in general-purpose amplifiers, low-speed switching applications, power management circuits, and automotive and industrial control systems.

  7. What is the collector-emitter saturation voltage of the TIP115G transistor?

    The collector-emitter saturation voltage (VCE(sat)) is 2.5 Vdc (Max) at IC = 2.0 A.

  8. What is the operating junction temperature range for the TIP115G transistor?

    The operating junction temperature range is -65°C to +150°C.

  9. What is the total power dissipation rating for the TIP115G transistor at TC = 25°C?

    The total power dissipation (PD) rating is 50 W at TC = 25°C.

  10. Does the TIP115G transistor have built-in base-emitter shunt resistors?

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 8mA, 2A
Current - Collector Cutoff (Max):2mA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 1A, 4V
Power - Max:2 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Same Series
TIP111
TIP111
TRANS NPN DARL 80V 2A TO220-3
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TIP117G
TRANS PNP DARL 100V 2A TO220
TIP111G
TIP111G
TRANS NPN DARL 80V 2A TO220
TIP115G
TIP115G
TRANS PNP DARL 60V 2A TO220
TIP110G
TIP110G
TRANS NPN DARL 60V 2A TO220
TIP112G
TIP112G
TRANS NPN DARL 100V 2A TO220
TIP116G
TIP116G
TRANS PNP DARL 80V 2A TO220

Similar Products

Part Number TIP115G TIP117G TIP125G TIP116G TIP145G TIP105G TIP110G TIP111G TIP112G TIP115
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor
Product Status Active Active Obsolete Active Obsolete Active Active Active Active Active
Transistor Type PNP - Darlington PNP - Darlington PNP - Darlington PNP - Darlington PNP - Darlington - NPN - Darlington NPN - Darlington NPN - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 2 A 2 A 5 A 2 A 10 A - 2 A 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 60 V 100 V 60 V 80 V 60 V - 60 V 80 V 100 V 60 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 4V @ 20mA, 5A 2.5V @ 8mA, 2A 3V @ 40mA, 10A - 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max) 2mA 2mA 500µA 2mA 2mA - 2mA 2mA 2mA 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 3A, 3V 1000 @ 1A, 4V 1000 @ 5A, 4V - 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V
Power - Max 2 W 2 W 2 W 2 W 125 W - 2 W 2 W 2 W 2 W
Frequency - Transition - - - - - - - - - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) - -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole - Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-247-3 - TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-247-3 - TO-220 TO-220 TO-220 TO-220AB

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