TIP112
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NTE Electronics, Inc TIP112

Manufacturer No:
TIP112
Manufacturer:
NTE Electronics, Inc
Package:
Bag
Description:
TRANS NPN DARL 100V 2A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP112 NPN Darlington transistor, produced by NTE Electronics, Inc., is a high-gain, medium-power transistor designed for general-purpose amplifier and low-speed switching applications. It is part of the TIP series and is known for its high DC current gain and low collector-emitter saturation voltage. The transistor is housed in a standard through-hole TO-220 package, making it suitable for a variety of electronic circuits.

Key Specifications

ParameterValue
Collector-Emitter Voltage (Vceo)100 V
Collector-Base Voltage (Vcbo)100 V
Collector Current (Ic)2.0 A
DC Current Gain (hFE)1000 @ 1 A, 4 V
Power Dissipation (Ptot)50 W
Collector-Emitter Saturation Voltage (Vce Sat)2.5 V @ 8 mA, 2 A
Emitter-Base Voltage (Veb)5 V
Operating Temperature-65 °C to 150 °C
Package TypeTO-220AB
Mounting TypeThrough Hole

Key Features

  • High DC current gain (hFE) of 1000 @ 1 A, 4 V, ensuring high amplification capabilities.
  • Low collector-emitter saturation voltage (Vce Sat) of 2.5 V @ 8 mA, 2 A, reducing power losses.
  • Internal base-emitter resistors for improved switching speeds.
  • Monolithic construction with built-in base-emitter shunt resistors.
  • Lead-free and RoHS compliant, making it environmentally friendly.

Applications

The TIP112 transistor is widely used in various applications, including:

  • General-purpose amplifiers: Due to its high gain and low saturation voltage, it is ideal for amplifier circuits.
  • Low-speed switching circuits: Suitable for applications where high current gain and medium power handling are required.
  • Power supplies: Can be used in power supply circuits where high current and voltage handling are necessary.
  • Motor control: Often used in motor control circuits due to its ability to handle high currents.

Q & A

  1. What is the maximum collector-emitter voltage of the TIP112 transistor?
    The maximum collector-emitter voltage (Vceo) of the TIP112 transistor is 100 V.
  2. What is the maximum collector current of the TIP112 transistor?
    The maximum collector current (Ic) of the TIP112 transistor is 2.0 A.
  3. What is the typical DC current gain (hFE) of the TIP112 transistor?
    The typical DC current gain (hFE) of the TIP112 transistor is 1000 @ 1 A, 4 V.
  4. What is the power dissipation rating of the TIP112 transistor?
    The power dissipation rating of the TIP112 transistor is 50 W.
  5. What is the operating temperature range of the TIP112 transistor?
    The operating temperature range of the TIP112 transistor is -65 °C to 150 °C.
  6. What type of package does the TIP112 transistor come in?
    The TIP112 transistor comes in a TO-220AB package.
  7. Is the TIP112 transistor RoHS compliant?
    Yes, the TIP112 transistor is RoHS compliant.
  8. What are some common applications of the TIP112 transistor?
    The TIP112 transistor is commonly used in general-purpose amplifiers, low-speed switching circuits, power supplies, and motor control circuits.
  9. Does the TIP112 transistor have internal base-emitter resistors?
    Yes, the TIP112 transistor has internal base-emitter resistors for improving switching speeds.
  10. What is the collector-emitter saturation voltage (Vce Sat) of the TIP112 transistor?
    The collector-emitter saturation voltage (Vce Sat) of the TIP112 transistor is 2.5 V @ 8 mA, 2 A.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 8mA, 2A
Current - Collector Cutoff (Max):2mA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 1A, 4V
Power - Max:2 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Similar Products

Part Number TIP112 TIP117 TIP115 TIP116 TIP142 TIP122 TIP132 TIP112G TIP152 TIP102 TIP110 TIP111
Manufacturer NTE Electronics, Inc Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor NTE Electronics, Inc NTE Electronics, Inc STMicroelectronics onsemi NTE Electronics, Inc NTE Electronics, Inc NTE Electronics, Inc Fairchild Semiconductor
Product Status Active Obsolete Active Obsolete Active Active Active Active Active Active Active Obsolete
Transistor Type NPN - Darlington PNP - Darlington PNP - Darlington PNP - Darlington NPN NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 2 A 2 A 2 A 2 A 10 A 5 A 8 A 2 A 10 A 8 A - 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 60 V 80 V 100 V 100 V 100 V 100 V 400 V 100 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A - 4V @ 20mA, 5A 4V @ 30mA, 6A 2.5V @ 8mA, 2A 2V @ 250mA, 5A 2.5V @ 80mA, 8A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max) 2mA 2mA 2mA 2mA - 500µA 500µA 2mA 250µA 50µA 2mA 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 5A, 4V 1000 @ 3A, 3V 1000 @ 4A, 4V 1000 @ 1A, 4V 150 @ 2.5A, 5V 1000 @ 3A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V
Power - Max 2 W 2 W 2 W 50 W 125 W 2 W 2 W 2 W 80 W 2 W - 50 W
Frequency - Transition - - - 25MHz - - - - - - 25MHz 25MHz
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-247-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220-3 TO-220AB TO-220-3 TO-247 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220-3 TO-220-3

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