Overview
The TIP112 NPN Darlington transistor, produced by NTE Electronics, Inc., is a high-gain, medium-power transistor designed for general-purpose amplifier and low-speed switching applications. It is part of the TIP series and is known for its high DC current gain and low collector-emitter saturation voltage. The transistor is housed in a standard through-hole TO-220 package, making it suitable for a variety of electronic circuits.
Key Specifications
Parameter | Value |
---|---|
Collector-Emitter Voltage (Vceo) | 100 V |
Collector-Base Voltage (Vcbo) | 100 V |
Collector Current (Ic) | 2.0 A |
DC Current Gain (hFE) | 1000 @ 1 A, 4 V |
Power Dissipation (Ptot) | 50 W |
Collector-Emitter Saturation Voltage (Vce Sat) | 2.5 V @ 8 mA, 2 A |
Emitter-Base Voltage (Veb) | 5 V |
Operating Temperature | -65 °C to 150 °C |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Key Features
- High DC current gain (hFE) of 1000 @ 1 A, 4 V, ensuring high amplification capabilities.
- Low collector-emitter saturation voltage (Vce Sat) of 2.5 V @ 8 mA, 2 A, reducing power losses.
- Internal base-emitter resistors for improved switching speeds.
- Monolithic construction with built-in base-emitter shunt resistors.
- Lead-free and RoHS compliant, making it environmentally friendly.
Applications
The TIP112 transistor is widely used in various applications, including:
- General-purpose amplifiers: Due to its high gain and low saturation voltage, it is ideal for amplifier circuits.
- Low-speed switching circuits: Suitable for applications where high current gain and medium power handling are required.
- Power supplies: Can be used in power supply circuits where high current and voltage handling are necessary.
- Motor control: Often used in motor control circuits due to its ability to handle high currents.
Q & A
- What is the maximum collector-emitter voltage of the TIP112 transistor?
The maximum collector-emitter voltage (Vceo) of the TIP112 transistor is 100 V. - What is the maximum collector current of the TIP112 transistor?
The maximum collector current (Ic) of the TIP112 transistor is 2.0 A. - What is the typical DC current gain (hFE) of the TIP112 transistor?
The typical DC current gain (hFE) of the TIP112 transistor is 1000 @ 1 A, 4 V. - What is the power dissipation rating of the TIP112 transistor?
The power dissipation rating of the TIP112 transistor is 50 W. - What is the operating temperature range of the TIP112 transistor?
The operating temperature range of the TIP112 transistor is -65 °C to 150 °C. - What type of package does the TIP112 transistor come in?
The TIP112 transistor comes in a TO-220AB package. - Is the TIP112 transistor RoHS compliant?
Yes, the TIP112 transistor is RoHS compliant. - What are some common applications of the TIP112 transistor?
The TIP112 transistor is commonly used in general-purpose amplifiers, low-speed switching circuits, power supplies, and motor control circuits. - Does the TIP112 transistor have internal base-emitter resistors?
Yes, the TIP112 transistor has internal base-emitter resistors for improving switching speeds. - What is the collector-emitter saturation voltage (Vce Sat) of the TIP112 transistor?
The collector-emitter saturation voltage (Vce Sat) of the TIP112 transistor is 2.5 V @ 8 mA, 2 A.