1N34A
  • Share:

NTE Electronics, Inc 1N34A

Manufacturer No:
1N34A
Manufacturer:
NTE Electronics, Inc
Package:
Bag
Description:
D-GE- 75PRV .005A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N34A is a point contact Germanium diode manufactured by NTE Electronics, Inc. It is housed in a DO7 type package and is renowned for its excellent linearity and efficiency in various electronic applications. The diode utilizes N-type Germanium, which offers minimal forward voltage drop and superior electron mobility, making it highly suitable for tasks such as TV image detection, FM detection, and radio AM detection.

The 1N34A diode is particularly valued for its robust linearity and heightened efficiency in handling high-frequency signals with minimal distortion. Its ability to demodulate signals precisely and maintain signal integrity makes it a crucial component in both vintage and contemporary electronic configurations.

Key Specifications

Parameter Value Unit
Peak Inverse Voltage (PIV) 65 V
Reverse Voltage (VR) 20 V
Peak Forward Surge Current (IFSM) 0.5 A
Forward Voltage Drop (VF) 1 V
Forward Current (IF) 4 mA
Reverse Current (IR) 500 μA @ 50V
Junction Capacitance (Cj) 1 pF @ -1V, 1MHz
Rectification Efficiency (η) 55 %
Operating Temperature Range -55°C to 75°C
Package Type DO7 (Axial)
Mounting Type Through Hole

Key Features

  • Low Forward Voltage Drop: The 1N34A diode has a minimal forward voltage drop of around 1V, which is beneficial for applications requiring high sensitivity and low power consumption.
  • Flat Junction Capacitance: It features a flat junction capacitance of 1 pF, ensuring stable performance at high frequencies.
  • High Mechanical Strength: The diode offers high mechanical strength, providing durability and reliability in various applications.
  • Low Leakage Current: The diode has a low reverse leakage current, which helps in minimizing power loss in circuits.
  • High Rectification Efficiency: It boasts a rectification efficiency of 55%, making it efficient in signal detection and demodulation tasks.

Applications

  • AM/FM Detectors: The 1N34A is widely used in AM and FM detectors due to its ability to demodulate signals precisely and maintain signal integrity.
  • Ratio Detectors and FM Discriminators: It is effective in ratio detectors and FM discriminators, handling swift amplitude changes while preserving signal integrity.
  • TV Audio and Video Detectors: The diode is used in TV audio and video detectors, contributing to excellent audio and visual outputs by converting frequency variations into recognizable signals.
  • RF Input Probes: It is also utilized in RF input probes due to its high radiofrequency responsiveness and minimal leakage current.

Q & A

  1. What is the peak inverse voltage (PIV) of the 1N34A diode?

    The peak inverse voltage (PIV) of the 1N34A diode is 65V.

  2. What is the forward voltage drop (VF) of the 1N34A diode?

    The forward voltage drop (VF) of the 1N34A diode is 1V at 5mA.

  3. What is the junction capacitance of the 1N34A diode?

    The junction capacitance of the 1N34A diode is 1 pF at -1V and 1MHz.

  4. What are the typical applications of the 1N34A diode?

    The 1N34A diode is typically used in AM/FM detectors, ratio detectors, FM discriminators, TV audio and video detectors, and RF input probes.

  5. What is the operating temperature range of the 1N34A diode?

    The operating temperature range of the 1N34A diode is -55°C to 75°C.

  6. Why is the 1N34A diode preferred in high-frequency applications?

    The 1N34A diode is preferred in high-frequency applications due to its low forward voltage drop, flat junction capacitance, and high mechanical strength, which ensure stable performance and minimal signal distortion.

  7. Can the 1N34A diode be replaced by other diodes in all applications?

    No, the 1N34A diode has specific characteristics that make it unique for certain applications. While it can be replaced by Schottky diodes like the 1N5711 in some cases, it may not perform equally well in all scenarios, especially those requiring precise signal demodulation and low junction capacitance.

  8. What is the rectification efficiency of the 1N34A diode?

    The rectification efficiency of the 1N34A diode is 55%.

  9. Is the 1N34A diode RoHS compliant?

    No, the 1N34A diode is not RoHS compliant.

  10. Where can you purchase the 1N34A diode?

    The 1N34A diode can be purchased from various suppliers, including NTE Electronics, Digi-Key, Amazon, and other electronic component retailers.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):65 V
Current - Average Rectified (Io):50mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 5 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 µA @ 50 V
Capacitance @ Vr, F:1pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AA, DO-7, Axial
Supplier Device Package:DO-7
Operating Temperature - Junction:75°C (Max)
0 Remaining View Similar

In Stock

$0.95
90

Please send RFQ , we will respond immediately.

Same Series
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

1N5361B
1N5361B
NTE Electronics, Inc
DIODE ZENER 27V 5W AXIAL
1N5363B
1N5363B
NTE Electronics, Inc
DIODE ZENER 30V 5W AXIAL
1N5350B
1N5350B
NTE Electronics, Inc
DIODE ZENER 13V 5W AXIAL
TIP102
TIP102
NTE Electronics, Inc
TRANS NPN DARL 100V 8A TO220
TIP145
TIP145
NTE Electronics, Inc
TRANS PNP 60V 10A TO218
MJ2955
MJ2955
NTE Electronics, Inc
TRANS PNP 60V 15A TO3
TIP142
TIP142
NTE Electronics, Inc
TRANS NPN 100V 10A TO247
TIP110
TIP110
NTE Electronics, Inc
TRANS NPN DARL 60V TO220-3
TIP112
TIP112
NTE Electronics, Inc
TRANS NPN DARL 100V 2A TO220
TIP122
TIP122
NTE Electronics, Inc
TRANS NPN DARL 100V 5A TO220
TIP127
TIP127
NTE Electronics, Inc
TRANS PNP DARL 100V 5A TO220
BU806
BU806
NTE Electronics, Inc
TRANS NPN DARL 200V 8A TO220-3