2N2102
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NTE Electronics, Inc 2N2102

Manufacturer No:
2N2102
Manufacturer:
NTE Electronics, Inc
Package:
Bag
Description:
TRANS NPN 65V 1A TO39
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N2102 is a silicon NPN epitaxial planar transistor designed for high current general purpose switching applications. Manufactured by NTE Electronics, Inc, this transistor is part of a broader family of NPN transistors known for their reliability and performance in various electronic circuits. The 2N2102 is widely used in applications requiring high current handling and moderate voltage ratings.

Key Specifications

Parameter Value Units
Transistor Type NPN -
Collector-Base Voltage (VCBO) 120 V
Collector-Emitter Voltage (VCEO) 65 V
Emitter-Base Voltage (VEBO) 7.0 V
Continuous Collector Current (IC) 1.0 A
Power Dissipation (PD) 5.0 W
Operating and Storage Junction Temperature (TJ, Tstg) -65 to +200 °C
Thermal Resistance (ΘJA) 175 °C/W
VCE(SAT) @ IC=150mA, IB=15mA 0.5 V
DC Current Gain (hFE) @ VCE=10V, IC=150mA 40 -
Package TO-39-3 Metal Can -

Key Features

  • High Current Handling: The 2N2102 can handle a continuous collector current of up to 1.0 A, making it suitable for high current applications.
  • Moderate Voltage Ratings: With a collector-emitter voltage rating of 65V, this transistor is versatile for various circuit designs.
  • Low Saturation Voltage: The VCE(SAT) of 0.5V at IC=150mA and IB=15mA ensures efficient switching operations.
  • High DC Current Gain: The hFE of 40 at VCE=10V and IC=150mA provides reliable amplification and switching performance.
  • Wide Operating Temperature Range: The transistor can operate over a junction temperature range of -65°C to +200°C, enhancing its reliability in diverse environments.

Applications

  • General Purpose Switching: The 2N2102 is ideal for general purpose switching applications due to its high current and moderate voltage ratings.
  • Amplifier Circuits: Its high DC current gain makes it suitable for use in amplifier circuits where reliable amplification is required.
  • Power Supplies and Regulators: The transistor can be used in power supply and regulator circuits where high current handling is necessary.
  • Automotive and Industrial Electronics: The wide operating temperature range and robust construction make it suitable for use in automotive and industrial electronic systems.

Q & A

  1. What is the maximum collector current of the 2N2102 transistor?

    The maximum collector current (IC) of the 2N2102 transistor is 1.0 A.

  2. What is the collector-emitter voltage rating of the 2N2102?

    The collector-emitter voltage rating (VCEO) of the 2N2102 is 65 V.

  3. What is the typical VCE(SAT) for the 2N2102 transistor?

    The typical VCE(SAT) for the 2N2102 transistor is 0.5 V at IC=150mA and IB=15mA.

  4. What is the DC current gain (hFE) of the 2N2102 transistor?

    The DC current gain (hFE) of the 2N2102 transistor is 40 at VCE=10V and IC=150mA.

  5. What is the operating temperature range of the 2N2102 transistor?

    The operating temperature range of the 2N2102 transistor is -65°C to +200°C.

  6. What package types are available for the 2N2102 transistor?

    The 2N2102 transistor is available in TO-39-3 Metal Can packages.

  7. What are some common applications of the 2N2102 transistor?

    The 2N2102 transistor is commonly used in general purpose switching, amplifier circuits, power supplies, and automotive and industrial electronics.

  8. How does the 2N2102 handle thermal stress?

    The 2N2102 has a thermal resistance (ΘJA) of 175°C/W, indicating its ability to handle thermal stress within specified limits.

  9. Is the 2N2102 RoHS compliant?

    Yes, there are versions of the 2N2102 that are RoHS compliant, depending on the manufacturer and specific part number.

  10. Where can I purchase the 2N2102 transistor?

    The 2N2102 transistor can be purchased from various electronic component distributors such as Heisener, DigiPart, and other authorized suppliers.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 15mA, 150mA
Current - Collector Cutoff (Max):2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 10V
Power - Max:1 W
Frequency - Transition:- 
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-205AD, TO-39-3 Metal Can
Supplier Device Package:TO-39
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Similar Products

Part Number 2N2102 2N2102A 2N2102S
Manufacturer NTE Electronics, Inc Microchip Technology Microchip Technology
Product Status Active Active Active
Transistor Type NPN PNP -
Current - Collector (Ic) (Max) 1 A 1 A -
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V -
Vce Saturation (Max) @ Ib, Ic 500mV @ 15mA, 150mA - -
Current - Collector Cutoff (Max) 2nA (ICBO) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V - -
Power - Max 1 W 5 W -
Frequency - Transition - - -
Operating Temperature 175°C (TJ) - -
Mounting Type Through Hole Through Hole -
Package / Case TO-205AD, TO-39-3 Metal Can TO-205AA, TO-5-3 Metal Can -
Supplier Device Package TO-39 TO-5 -

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