2N2102S
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Microchip Technology 2N2102S

Manufacturer No:
2N2102S
Manufacturer:
Microchip Technology
Package:
Bulk
Description:
NPN TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The 2N2102S is a General Purpose Bipolar Junction Transistor (BJT) manufactured by Microchip Technology. This NPN transistor is designed for a variety of power and switching applications. It is housed in a 3-pin TO-5 package, making it suitable for use in a range of electronic circuits.

Key Specifications

ParameterValue
Transistor TypeNPN
Collector-Base Voltage (VCB)65 V
Collector-Emitter Voltage (VCE)65 V
Emitter-Base Voltage (VEB)5 V
Collector Current (IC)1 A
Power Dissipation (PD)3 W
Package TypeTO-5
Pins3

Key Features

  • General Purpose NPN Transistor: Suitable for a wide range of applications including power amplification and switching.
  • High Collector Current: Capable of handling up to 1 A of collector current.
  • High Voltage Rating: Can handle collector-base and collector-emitter voltages up to 65 V.
  • Compact TO-5 Package: Ideal for applications where space is limited.
  • Reliable Performance: Ensures consistent operation in various environmental conditions.

Applications

The 2N2102S transistor is versatile and can be used in several applications, including:

  • Power Amplifiers: For amplifying low-level signals to higher power levels.
  • Switching Circuits: In digital circuits where the transistor acts as a switch.
  • Audio Amplifiers: For amplifying audio signals.
  • Motor Control: For controlling DC motors in various industrial and consumer electronics.

Q & A

  1. What is the collector current rating of the 2N2102S transistor?
    The collector current rating of the 2N2102S transistor is 1 A.
  2. What is the maximum collector-base voltage for the 2N2102S?
    The maximum collector-base voltage for the 2N2102S is 65 V.
  3. What type of package does the 2N2102S come in?
    The 2N2102S comes in a 3-pin TO-5 package.
  4. What is the power dissipation of the 2N2102S transistor?
    The power dissipation of the 2N2102S transistor is 3 W.
  5. Is the 2N2102S suitable for high-frequency applications?
    While it can be used in some high-frequency applications, it is primarily designed for general-purpose use and may not be the best choice for very high-frequency applications.
  6. Can the 2N2102S be used in motor control circuits?
    Yes, the 2N2102S can be used in motor control circuits due to its ability to handle significant current and voltage.
  7. What is the emitter-base voltage rating of the 2N2102S?
    The emitter-base voltage rating of the 2N2102S is 5 V.
  8. Is the 2N2102S available in other package types?
    No, the 2N2102S is specifically available in the TO-5 package.
  9. Can the 2N2102S be used in audio amplifiers?
    Yes, the 2N2102S can be used in audio amplifiers for amplifying audio signals.
  10. What is the typical use case for the 2N2102S transistor?
    The typical use case for the 2N2102S transistor includes power amplification and switching applications.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number 2N2102S 2N2102 2N2102A
Manufacturer Microchip Technology NTE Electronics, Inc Microchip Technology
Product Status Active Active Active
Transistor Type - NPN PNP
Current - Collector (Ic) (Max) - 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) - 65 V 65 V
Vce Saturation (Max) @ Ib, Ic - 500mV @ 15mA, 150mA -
Current - Collector Cutoff (Max) - 2nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce - 40 @ 150mA, 10V -
Power - Max - 1 W 5 W
Frequency - Transition - - -
Operating Temperature - 175°C (TJ) -
Mounting Type - Through Hole Through Hole
Package / Case - TO-205AD, TO-39-3 Metal Can TO-205AA, TO-5-3 Metal Can
Supplier Device Package - TO-39 TO-5

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