2N2102A
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Microchip Technology 2N2102A

Manufacturer No:
2N2102A
Manufacturer:
Microchip Technology
Package:
Bulk
Description:
TRANS PNP 65V 1A TO5
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N2102A, produced by Microchip Technology, is a silicon NPN epitaxial planar transistor. It is designed for high current general purpose switching applications. This transistor is part of the 2N2102 series, known for its robust performance and reliability in various electronic circuits.

Key Specifications

Parameter Units Minimum Maximum
Collector-Base Voltage (VCBO) V - 120
Collector-Emitter Voltage (VCER) V - 80
Collector-Emitter Voltage (VCEO) V - 65
Emitter-Base Voltage (VEBO) V - 7.0
Continuous Collector Current (IC) A - 1.0
Power Dissipation (PD) at TC=25°C W - 5.0
Operating and Storage Junction Temperature (TJ, Tstg) °C -65 200
Thermal Resistance (ΘJA) °C/W - 175
Thermal Resistance (ΘJC) °C/W - 35
Saturation Voltage (VCE(SAT)) at IC=150mA, IB=15mA V 0.3 -
Base-Emitter Saturation Voltage (VBE(SAT)) at IC=150mA, IB=15mA V 1.1 -
Current Gain (hFE) at VCE=10V, IC=10mA - 35 -

Key Features

  • High Current Capability: The 2N2102A can handle a continuous collector current of up to 1.0 A, making it suitable for high current switching applications.
  • High Voltage Ratings: With collector-base, collector-emitter, and emitter-base voltage ratings of 120V, 80V, and 7.0V respectively, this transistor is robust against voltage spikes.
  • Low Saturation Voltage: The transistor has a low saturation voltage (VCE(SAT)) of 0.3V at IC=150mA and IB=15mA, which minimizes power losses in switching applications.
  • Wide Operating Temperature Range: It operates over a temperature range of -65°C to 200°C, making it versatile for various environmental conditions.
  • Compact TO-39 Package: The transistor is housed in a TO-39 package, which is compact and suitable for a variety of board designs.

Applications

  • General Purpose Switching: The 2N2102A is ideal for general purpose switching applications due to its high current and voltage handling capabilities.
  • Power Amplifiers: It can be used in power amplifier circuits where high current drive is necessary.
  • Motor Control: Suitable for motor control circuits due to its ability to handle high currents and voltages.
  • Industrial Automation: Used in various industrial automation applications requiring reliable and robust switching performance.

Q & A

  1. What is the maximum collector current of the 2N2102A transistor?

    The maximum collector current is 1.0 A.

  2. What is the collector-emitter voltage rating of the 2N2102A?

    The collector-emitter voltage rating is 80 V.

  3. What is the saturation voltage (VCE(SAT)) of the 2N2102A at IC=150mA and IB=15mA?

    The saturation voltage (VCE(SAT)) is 0.3 V.

  4. What is the operating temperature range of the 2N2102A transistor?

    The operating temperature range is -65°C to 200°C.

  5. What type of package does the 2N2102A transistor come in?

    The transistor is housed in a TO-39 package.

  6. What are some common applications of the 2N2102A transistor?

    Common applications include general purpose switching, power amplifiers, motor control, and industrial automation.

  7. What is the thermal resistance (ΘJA) of the 2N2102A transistor?

    The thermal resistance (ΘJA) is 175 °C/W.

  8. What is the base-emitter saturation voltage (VBE(SAT)) at IC=150mA and IB=15mA?

    The base-emitter saturation voltage (VBE(SAT)) is 1.1 V.

  9. Can the 2N2102A be used in high-frequency applications?

    While it is primarily designed for switching applications, it can be used in certain high-frequency scenarios, but its performance may not be optimal compared to specialized high-frequency transistors.

  10. Is the 2N2102A available in lead-free versions?

    Yes, the 2N2102A can be ordered in lead-free versions by adding the suffix “PBFREE” to the part number.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:5 W
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:Through Hole
Package / Case:TO-205AA, TO-5-3 Metal Can
Supplier Device Package:TO-5
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Similar Products

Part Number 2N2102A 2N2102S 2N2102
Manufacturer Microchip Technology Microchip Technology NTE Electronics, Inc
Product Status Active Active Active
Transistor Type PNP - NPN
Current - Collector (Ic) (Max) 1 A - 1 A
Voltage - Collector Emitter Breakdown (Max) 65 V - 65 V
Vce Saturation (Max) @ Ib, Ic - - 500mV @ 15mA, 150mA
Current - Collector Cutoff (Max) - - 2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce - - 40 @ 150mA, 10V
Power - Max 5 W - 1 W
Frequency - Transition - - -
Operating Temperature - - 175°C (TJ)
Mounting Type Through Hole - Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can - TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-5 - TO-39

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