Overview
The 2N5416UA is a silicon PNP bipolar junction transistor (BJT) manufactured by Microchip Technology. This transistor is designed for consumer and industrial line-operated applications, offering high reliability and performance. It is part of the 2N5416 series, which is known for its robust specifications and versatility in various electronic circuits.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Collector-Base Voltage (VCBO) | 350 | V |
| Collector-Emitter Voltage (VCEO) | 300 | V |
| Emitter-Base Voltage (VEBO) | 6.0 | V |
| Continuous Collector Current (IC) | 1.0 | A |
| Continuous Base Current (IB) | 0.5 | A |
| Power Dissipation (PD) | 0.75 | W |
| Operating and Storage Junction Temperature (TJ, Tstg) | -65 to +200 | °C |
| Package Type | TO-39 | |
| Pins | 4 |
Key Features
- High Voltage Capability: The 2N5416UA can handle collector-emitter voltages up to 300V and collector-base voltages up to 350V, making it suitable for high-voltage applications.
- High Current Handling: It can handle continuous collector currents of up to 1A, which is beneficial for applications requiring significant current flow.
- Low Power Dissipation: With a power dissipation of 0.75W, this transistor is efficient in terms of heat management.
- Wide Temperature Range: The transistor operates and can be stored within a temperature range of -65°C to +200°C, ensuring reliability in various environmental conditions.
- Compliance with Military Standards: The 2N5416UA meets MIL-PRF-19500/485 standards, indicating its suitability for military and high-reliability applications.
Applications
- Consumer Electronics: Suitable for use in consumer electronic devices that require high voltage and current handling.
- Industrial Line-Operated Applications: Ideal for industrial equipment that operates on high voltage lines.
- Power Amplifiers and Switches: Can be used in power amplifier circuits and switching applications due to its high current and voltage capabilities.
- Military and Aerospace: Meets military standards, making it a reliable choice for military and aerospace applications.
Q & A
- What is the collector-emitter voltage (VCEO) of the 2N5416UA transistor?
The collector-emitter voltage (VCEO) of the 2N5416UA transistor is 300V.
- What is the maximum continuous collector current (IC) of the 2N5416UA transistor?
The maximum continuous collector current (IC) of the 2N5416UA transistor is 1A.
- What is the power dissipation (PD) of the 2N5416UA transistor?
The power dissipation (PD) of the 2N5416UA transistor is 0.75W.
- What is the operating and storage junction temperature range for the 2N5416UA transistor?
The operating and storage junction temperature range for the 2N5416UA transistor is -65°C to +200°C.
- What package type does the 2N5416UA transistor come in?
The 2N5416UA transistor comes in a TO-39 package.
- Does the 2N5416UA meet any military standards?
Yes, the 2N5416UA meets MIL-PRF-19500/485 standards.
- What are some common applications for the 2N5416UA transistor?
The 2N5416UA transistor is commonly used in consumer electronics, industrial line-operated applications, power amplifiers, and military/aerospace applications.
- What is the emitter-base voltage (VEBO) of the 2N5416UA transistor?
The emitter-base voltage (VEBO) of the 2N5416UA transistor is 6.0V.
- How many pins does the 2N5416UA transistor have?
The 2N5416UA transistor has 4 pins.
- Is the 2N5416UA transistor RoHS compliant?
Yes, the 2N5416UA transistor is RoHS compliant.
