Overview
The 1N5711E3/TR is a Schottky diode manufactured by Microchip Technology. This component is designed for rectification and switching applications, offering low forward voltage drop and fast switching times. The 1N5711E3/TR is packaged in a DO-35 (DO-204AH) axial case, making it suitable for through-hole mounting. It is widely used in various electronic circuits where high efficiency and reliability are required.
Key Specifications
Parameter | Value |
---|---|
Manufacturer | Microchip Technology |
Description | SCHOTTKY DIODE 70V 33mA DO35 |
Diode Type | Schottky Barrier |
Voltage - DC Reverse (Vr) (Max) | 70 V |
Current - Average Rectified (Io) | 33 mA |
Voltage - Forward (Vf) (Max) @ If | 1 V @ 15 mA |
Current - Reverse Leakage @ Vr | 200 nA @ 50 V |
Capacitance @ Vr, F | 2 pF @ 0V, 1 MHz |
Mounting Type | Through Hole |
Package/Case | DO-204AH, DO-35, Axial |
Operating Temperature - Junction | -65°C ~ 150°C |
Speed | Small Signal =< 200 mA (Io), Any Speed |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Key Features
- Low Forward Voltage Drop: The 1N5711E3/TR features a low forward voltage drop of 1 V at 15 mA, making it efficient for rectification and switching applications.
- Fast Switching Times: This Schottky diode is known for its fast switching times, which is crucial in high-frequency applications.
- High Reverse Voltage: With a maximum DC reverse voltage of 70 V, this diode is suitable for applications requiring high voltage handling.
- Through-Hole Mounting: The DO-35 (DO-204AH) axial package allows for easy through-hole mounting, making it versatile for various circuit designs.
- Wide Operating Temperature Range: The diode operates within a temperature range of -65°C to 150°C, ensuring reliability in diverse environmental conditions.
Applications
- Rectification Circuits: The 1N5711E3/TR is commonly used in rectifier circuits due to its low forward voltage drop and high efficiency.
- Switching Circuits: Its fast switching times make it suitable for use in switching circuits, including power supplies and DC-DC converters.
- Audio and RF Circuits: The diode's low noise and fast recovery time make it a good choice for audio and RF applications.
- General Purpose Electronics: It can be used in various general-purpose electronic circuits where a reliable and efficient Schottky diode is required.
Q & A
- What is the maximum DC reverse voltage of the 1N5711E3/TR?
The maximum DC reverse voltage is 70 V.
- What is the forward voltage drop at 15 mA for the 1N5711E3/TR?
The forward voltage drop at 15 mA is 1 V.
- What is the average rectified current (Io) of the 1N5711E3/TR?
The average rectified current (Io) is 33 mA.
- What is the package type of the 1N5711E3/TR?
The package type is DO-204AH, DO-35, Axial.
- Is the 1N5711E3/TR RoHS compliant?
No, the 1N5711E3/TR is not RoHS compliant.
- What is the operating temperature range of the 1N5711E3/TR?
The operating temperature range is -65°C to 150°C.
- What is the reverse leakage current at 50 V for the 1N5711E3/TR?
The reverse leakage current at 50 V is 200 nA.
- What is the capacitance at 0 V and 1 MHz for the 1N5711E3/TR?
The capacitance at 0 V and 1 MHz is 2 pF.
- Is the 1N5711E3/TR suitable for high-frequency applications?
Yes, it is suitable due to its fast switching times and low noise characteristics.
- What type of mounting does the 1N5711E3/TR support?
The 1N5711E3/TR supports through-hole mounting.