1N5711-1
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Microchip Technology 1N5711-1

Manufacturer No:
1N5711-1
Manufacturer:
Microchip Technology
Package:
Bulk
Description:
DIODE SCHOTTKY 70V 33MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The 1N5711-1 Schottky diode, produced by Microchip Technology, is a small signal Schottky barrier diode designed for high-performance applications. It is housed in a DO-35 (DO-204AH) package and is known for its high breakdown voltage, low turn-on voltage, and ultrafast switching capabilities. This diode is primarily intended for high-level UHF/VHF detection and pulse applications, offering a broad dynamic range. It is also qualified for military-grade use, making it suitable for demanding environments.

Key Specifications

Parameter Value Unit
Repetitive Peak Reverse Voltage (VRRM) 70 V
Forward Continuous Current (IF) 15 mA
Power Dissipation (Ptot) 430 mW
Storage and Junction Temperature Range (Tstg, Tj) -65 to 200 °C
Maximum Lead Temperature for Soldering 230 °C
Forward Voltage (VF) at IF = 15mA 1 V
Reverse Current (IR) at VR = 50V 0.2 µA
Capacitance at VR = 0V, f = 1MHz 2 pF
Reverse Recovery Time (trr) - -
Package/Case DO-35 (DO-204AH) -
Mounting Type Through Hole -

Key Features

  • High Breakdown Voltage: The 1N5711-1 diode has a repetitive peak reverse voltage (VRRM) of 70V, making it suitable for high-voltage applications.
  • Low Turn-On Voltage: It features a forward voltage (VF) of 1V at 15mA, which is beneficial for low-power consumption and efficient operation.
  • Ultrafast Switching: This diode is known for its ultrafast switching capabilities, with a reverse recovery time that is typically very low, although not specified in the provided sources.
  • Military Grade Qualifications: The 1N5711-1 is qualified for military-grade use, ensuring reliability and performance in demanding environments.
  • Compact Packaging: Housed in a DO-35 (DO-204AH) package, it is suitable for applications where space is limited.

Applications

  • UHF/VHF Detection: Primarily intended for high-level UHF/VHF detection due to its high breakdown voltage and ultrafast switching.
  • Pulse Applications: Suitable for pulse applications with a broad dynamic range.
  • Military and Aerospace: Qualified for military-grade use, making it ideal for various military and aerospace applications.
  • High-Frequency Circuits: Used in high-frequency circuits where fast switching and low turn-on voltage are critical.

Q & A

  1. What is the repetitive peak reverse voltage (VRRM) of the 1N5711-1 diode?

    The repetitive peak reverse voltage (VRRM) of the 1N5711-1 diode is 70V.

  2. What is the forward continuous current (IF) of the 1N5711-1 diode?

    The forward continuous current (IF) of the 1N5711-1 diode is 15mA.

  3. What is the maximum forward voltage (VF) at 15mA for the 1N5711-1 diode?

    The maximum forward voltage (VF) at 15mA for the 1N5711-1 diode is 1V.

  4. What is the storage and junction temperature range for the 1N5711-1 diode?

    The storage and junction temperature range for the 1N5711-1 diode is -65°C to 200°C.

  5. What is the package type of the 1N5711-1 diode?

    The 1N5711-1 diode is housed in a DO-35 (DO-204AH) package.

  6. Is the 1N5711-1 diode RoHS compliant?

    No, the 1N5711-1 diode is not RoHS compliant.

  7. What are the typical applications of the 1N5711-1 diode?

    The 1N5711-1 diode is typically used in UHF/VHF detection, pulse applications, and high-frequency circuits.

  8. What is the maximum lead temperature for soldering the 1N5711-1 diode?

    The maximum lead temperature for soldering the 1N5711-1 diode is 230°C.

  9. What is the capacitance of the 1N5711-1 diode at 0V and 1MHz?

    The capacitance of the 1N5711-1 diode at 0V and 1MHz is 2pF.

  10. Is the 1N5711-1 diode suitable for military applications?

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):70 V
Current - Average Rectified (Io):33mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 nA @ 50 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35 (DO-204AH)
Operating Temperature - Junction:-65°C ~ 150°C
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