MJE182
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NTE Electronics, Inc MJE182

Manufacturer No:
MJE182
Manufacturer:
NTE Electronics, Inc
Package:
Bag
Description:
TRANS NPN 80V 3A SOT32-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE182 is an NPN power transistor produced by NTE Electronics, Inc. This transistor is part of the MJE series and is known for its high current and voltage handling capabilities. Although the MJE182 is currently discontinued and not recommended for new designs, it remains a significant component in existing systems and legacy designs. The transistor is housed in a TO-126 package, making it suitable for various power and audio applications.

Key Specifications

Parameter Value Units
Collector-Emitter Voltage (Vceo) 80 V
Collector-Base Voltage (Vcbo) 100 V
Collector Current (Ic) 3.0 A
Base Current (Ib) 1 A
DC Current Gain (hfe) 50-250 @ 100mA -
Power Dissipation (Ptot) 12.5 W
Junction Temperature (Tj) 150 °C
Storage Temperature (Tstg) -65 to 150 °C
Current-Gain-Bandwidth (ftotal) 50 MHz

Key Features

  • Silicon NPN transistor with high current and voltage handling capabilities.
  • Collector-Emitter Voltage (Vceo) of 80V and Collector-Base Voltage (Vcbo) of 100V.
  • Collector Current (Ic) of up to 3.0A and Base Current (Ib) of up to 1A.
  • DC Current Gain (hfe) ranging from 50 to 250 at 100mA.
  • Power Dissipation (Ptot) of 12.5W.
  • Junction Temperature (Tj) of 150°C and Storage Temperature (Tstg) range of -65 to 150°C.
  • Current-Gain-Bandwidth (ftotal) of 50MHz.
  • TO-126 package for ease of use in various applications.

Applications

The MJE182 is suitable for a variety of applications, including:

  • Low power audio amplifiers due to its high current gain and low noise characteristics.
  • High speed switching applications where its fast switching times and high current handling are beneficial.
  • General power amplification and switching in electronic circuits.
  • Legacy systems and existing designs where the MJE182 has been previously integrated.

Q & A

  1. What is the Collector-Emitter Voltage (Vceo) of the MJE182?

    The Collector-Emitter Voltage (Vceo) of the MJE182 is 80V.

  2. What is the maximum Collector Current (Ic) of the MJE182?

    The maximum Collector Current (Ic) of the MJE182 is 3.0A.

  3. What is the DC Current Gain (hfe) range of the MJE182?

    The DC Current Gain (hfe) of the MJE182 ranges from 50 to 250 at 100mA.

  4. What is the power dissipation (Ptot) of the MJE182?

    The power dissipation (Ptot) of the MJE182 is 12.5W.

  5. What is the junction temperature (Tj) of the MJE182?

    The junction temperature (Tj) of the MJE182 is 150°C.

  6. What is the storage temperature range (Tstg) of the MJE182?

    The storage temperature range (Tstg) of the MJE182 is -65 to 150°C.

  7. What is the current-gain-bandwidth (ftotal) of the MJE182?

    The current-gain-bandwidth (ftotal) of the MJE182 is 50MHz.

  8. In what package is the MJE182 available?

    The MJE182 is available in a TO-126 package.

  9. Is the MJE182 still in production?

    No, the MJE182 is discontinued and not recommended for new designs.

  10. What are some common applications of the MJE182?

    The MJE182 is commonly used in low power audio amplifiers, high speed switching applications, and general power amplification and switching in electronic circuits.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1.7V @ 600mA, 3A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 100mA, 1V
Power - Max:12.5 W
Frequency - Transition:50MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32-3
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Similar Products

Part Number MJE182 MJE182G MJE172 MJE180 MJE181
Manufacturer NTE Electronics, Inc onsemi NTE Electronics, Inc NTE Electronics, Inc onsemi
Product Status Active Active Active Active Obsolete
Transistor Type NPN NPN PNP NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 40 V 60 V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A 1.7V @ 600mA, 3A 1.7V @ 600mA, 3A 300mV @ 50mA, 500mA 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) - 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 1V 50 @ 100mA, 1V 50 @ 100mA, 1V 50 @ 100mA, 1V 50 @ 100mA, 1V
Power - Max 12.5 W 1.5 W 1.5 W 12.5 W 12.5 W
Frequency - Transition 50MHz 50MHz 50MHz 50MHz 50MHz
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) - -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 TO-126 TO-126 TO-126 TO-126

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