Overview
The 2N3055 is a silicon NPN power transistor manufactured by NTE Electronics, Inc. It is built using an epitaxial-base planar structure and is enclosed in a TO-3 metal case, making it durable and suitable for a wide range of applications. This transistor is designed for medium power levels, handling tasks such as power switching, series and shunt regulators, output stages, and high-fidelity amplifiers. Its complementary PNP transistor, the MJ2955, allows for balanced circuit designs requiring both NPN and PNP transistors.
Key Specifications
| Parameter | Description |
|---|---|
| Transistor Type | NPN |
| Package / Case | TO-204AA, TO-3 |
| Collector-Emitter Breakdown Voltage (VCEO) | 60V |
| Maximum Collector Current (Ic) | 15A |
| DC Current Gain (hFE) (Min) | 20 @ 4A, 4V |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 7V |
| Vce Saturation (Max) | 3V @ 3.3A, 10A |
| Transition Frequency | 3MHz |
| Operating Temperature | -65°C to +200°C (TJ) |
| Maximum Power Dissipation | 115W |
| Mounting Type | Through Hole, Chassis Mount |
| Pb-free | Yes |
Key Features
- Medium Power Handling: The 2N3055 can manage moderate power levels, making it suitable for various circuits where high power is not required but more than low-power transistors can handle.
- Low Collector-Emitter Saturation Voltage: This feature reduces voltage loss across the transistor when it is in the 'on' state, improving efficiency in power-sensitive applications.
- High Current Capability: It can handle up to 15A of collector current, making it ideal for power applications with larger loads.
- Wide Operating Temperature Range: The transistor operates safely between -65°C to +200°C, making it suitable for use in extreme temperature environments.
- High Power Dissipation: The 2N3055 can dissipate up to 115W, ensuring it stays cool even under heavy loads.
- Pb-free Packages: Available in lead-free packages, making it a safer option for projects aiming to reduce harmful materials.
- Improved Linearity: The transistor offers improved linearity, ensuring predictable and consistent operation, especially in amplifier circuits.
Applications
- Power Switching Circuits: The 2N3055 is commonly used in power switching applications due to its ability to handle high currents and voltages.
- Series and Shunt Regulators: It is suitable for use in voltage regulators where stable and reliable performance is crucial.
- Output Stages: The transistor is used in the output stages of amplifiers due to its high current handling and low saturation voltage.
- High-Fidelity Amplifiers: Its improved linearity and stability make it an excellent choice for high-fidelity amplifier circuits.
- Motor Control: It can be used as a basic switching device to drive motors in various applications.
Q & A
- What is the maximum collector-emitter voltage of the 2N3055 transistor?
The maximum collector-emitter voltage (VCEO) of the 2N3055 transistor is 60V DC.
- What is the maximum collector current of the 2N3055 transistor?
The maximum collector current (Ic) of the 2N3055 transistor is 15A DC.
- What is the DC current gain (hFE) of the 2N3055 transistor?
The DC current gain (hFE) of the 2N3055 transistor is up to 70, with a minimum of 20 at 4A and 4V.
- What is the operating temperature range of the 2N3055 transistor?
The operating temperature range of the 2N3055 transistor is from -65°C to +200°C (TJ).
- What is the maximum power dissipation of the 2N3055 transistor?
The maximum power dissipation of the 2N3055 transistor is 115W.
- Is the 2N3055 transistor available in Pb-free packages?
Yes, the 2N3055 transistor is available in lead-free packages.
- What are the common applications of the 2N3055 transistor?
The 2N3055 transistor is commonly used in power switching circuits, series and shunt regulators, output stages, and high-fidelity amplifiers.
- What is the complementary PNP transistor of the 2N3055?
The complementary PNP transistor of the 2N3055 is the MJ2955.
- What is the maximum base-emitter voltage of the 2N3055 transistor?
The maximum base-emitter voltage (VEBO) of the 2N3055 transistor is 7V DC.
- What is the transition frequency of the 2N3055 transistor?
The transition frequency of the 2N3055 transistor is 3MHz.
