Overview
The 2N3055G is a high-power NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplifier applications. Manufactured by onsemi, this transistor is encapsulated in a TO-204 (TO-3) metal case, which is renowned for its efficient heat dissipation capabilities. It can handle continuous collector currents up to 15 A and has a maximum collector-emitter voltage of 60 V, making it a versatile component in various power handling applications. The 2N3055G is RoHS compliant, ensuring it meets current environmental standards regarding the restriction of hazardous substances.
Key Specifications
| Attribute | Value |
|---|---|
| Transistor Polarity | NPN |
| Maximum Collector-Emitter Voltage (Vce) | 60 V |
| Maximum Collector-Base Voltage (Vcb) | 100 V |
| Maximum Emitter-Base Voltage (Veb) | 7 V |
| Maximum DC Collector Current (Ic) | 15 A |
| Power Dissipation (Pd) | 115 W |
| DC Current Gain (hFE) | 20-70 at Ic = 4 A DC |
| Collector-Emitter Saturation Voltage (Vce(sat)) | 1.1 V DC (Max) at Ic = 4 A DC |
| Transition Frequency (ft) | 2.5 MHz |
| Maximum Operating Temperature | 200 °C |
| Package Type | TO-204 (TO-3) |
| Mounting Type | Through Hole |
| Number of Pins | 3 |
Key Features
- Excellent safe operating area (SOA).
- High DC current gain (hFE = 20-70 at Ic = 4 A DC).
- Low collector-emitter saturation voltage (Vce(sat) = 1.1 V DC maximum at Ic = 4 A DC).
- Efficient heat dissipation due to the TO-204 (TO-3) metal case.
- Rugged and reliable design suitable for harsh environments.
- Rohs compliant, ensuring environmental sustainability.
Applications
The 2N3055G transistor is versatile and can be used in a variety of applications across different industries:
- Industrial Automation: Motor control circuits, power regulation systems, and switching components in automated machinery.
- Consumer Electronics: Power supply units (PSUs), audio amplifiers, and high-performance computing components.
- Aerospace and Defense: Power distribution systems, control units, and environmental monitoring equipment.
- Telecommunications: RF power amplifiers, power management modules, and switching circuits in base station equipment.
- Education and Research: Experimental setups and educational kits in physics and engineering laboratories.
Q & A
- What is the maximum collector-emitter voltage of the 2N3055G transistor?
The maximum collector-emitter voltage (Vce) of the 2N3055G transistor is 60 V.
- What is the maximum DC collector current of the 2N3055G transistor?
The maximum DC collector current (Ic) of the 2N3055G transistor is 15 A.
- What is the power dissipation capacity of the 2N3055G transistor?
The power dissipation capacity (Pd) of the 2N3055G transistor is up to 115 W.
- What is the DC current gain (hFE) of the 2N3055G transistor?
The DC current gain (hFE) of the 2N3055G transistor is between 20 and 70 at Ic = 4 A DC.
- What is the collector-emitter saturation voltage (Vce(sat)) of the 2N3055G transistor?
The collector-emitter saturation voltage (Vce(sat)) of the 2N3055G transistor is 1.1 V DC maximum at Ic = 4 A DC.
- What is the transition frequency (ft) of the 2N3055G transistor?
The transition frequency (ft) of the 2N3055G transistor is 2.5 MHz.
- What is the maximum operating temperature of the 2N3055G transistor?
The maximum operating temperature of the 2N3055G transistor is 200 °C.
- What type of package does the 2N3055G transistor use?
The 2N3055G transistor uses a TO-204 (TO-3) metal case package.
- Is the 2N3055G transistor RoHS compliant?
Yes, the 2N3055G transistor is RoHS compliant.
- What are some common applications of the 2N3055G transistor?
The 2N3055G transistor is commonly used in industrial automation, consumer electronics, aerospace and defense, telecommunications, and educational settings.
- How does the 2N3055G transistor handle heat dissipation?
The 2N3055G transistor is encapsulated in a TO-204 (TO-3) metal case, which is designed for efficient heat dissipation.
